Dielectric substrate and method of forming the same

ABSTRACT

The present disclosure relates to a dielectric substrate that may include a polyimide layer and a first filled polymer layer overlying the polyimide layer. The first filled polymer layer may include a resin matrix component, and a first ceramic filler component. The first ceramic filler component may include a first filler material. The first filler material may further have a mean particle size of at not greater than about 10 microns.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application claims priority under 35 U.S.C. § 119(e) to U.S.Provisional Patent Application No. 63/057,670, entitled “DIELECTRICSUBSTRATE AND METHOD OF FORMING THE SAME,” by Jennifer ADAMCHUK, filedJul. 28, 2020, which is assigned to the current assignee hereof andincorporated by reference herein in its entirety.

FIELD OF THE DISCLOSURE

The present disclosure relates to a dielectric substrate and methods offorming the same. In particular, the present disclosure related to adielectric substrate for use in a copper-clad laminate structure and amethod of forming the same.

BACKGROUND

Copper-clad laminates (CCLs) include a dielectric material laminatedonto or between two layers of conductive copper foil. Subsequentoperations transform such CCLs into printed circuit boards (PCBs). Whenused to form PCBs, the conductive copper foil is selectively etched toform circuitry with through holes that are drilled between layers andmetalized, i.e. plated, to establish conductivity between layers inmultilayer PCBs. CCLs must therefore exhibit excellent thermomechanicalstability. PCBs are also routinely exposed to excessively hightemperatures during manufacturing operations, such as soldering, as wellas in service. Consequently, they must function at continuoustemperatures above 200° C. without deforming and withstand dramatictemperature fluctuations while resisting moisture absorption. Thedielectric layer of a CCL serves as a spacer between the conductivelayers and can minimize electrical signal loss and crosstalk by blockingelectrical conductivity. The lower the dielectric constant(permittivity) of the dielectric layer is, the higher the speed of theelectrical signal through the layer will be. A low dissipation factor,which is dependent upon temperature and frequency, as well as thepolarizability of the material, is therefore very critical forhigh-frequency applications. Accordingly, improved dielectric materialsand dielectric layers that can be used in PCBs and other high-frequencyapplications are desired.

SUMMARY

According to a first aspect, a dielectric substrate may include apolyimide layer and a first filled polymer layer overlying the polyimidelayer. The first filled polymer layer may include a resin matrixcomponent, and a first ceramic filler component. The first ceramicfiller component may include a first filler material. The first fillermaterial may further have a mean particle size of at not greater thanabout 10 microns.

According to another aspect, a copper-clad laminate may include a copperfoil layer and a dielectric substrate overlying the copper foil layer.The dielectric substrate may include a polyimide layer and a firstfilled polymer layer overlying the polyimide layer. The first filledpolymer layer may include a resin matrix component, and a first ceramicfiller component. The first ceramic filler component may include a firstfiller material. The first filler material may further have a meanparticle size of at not greater than about 10 microns.

According to yet another aspect, a printed circuit board may include acopper foil layer and a dielectric substrate overlying the copper foillayer. The dielectric substrate may include a polyimide layer and afirst filled polymer layer overlying the polyimide layer. The firstfilled polymer layer may include a resin matrix component, and a firstceramic filler component. The first ceramic filler component may includea first filler material. The first filler material may further have amean particle size of at not greater than about 10 microns.

According to another aspect, a method of forming a dielectric substratemay include providing a polyimide layer, combining a first resin matrixprecursor component and a first ceramic filler precursor component toform a first forming mixture, and forming the first forming mixture intoa first filled polymer layer overlying the polyimide layer. The firstceramic filler precursor component may include a first filler precursormaterial. The first filler precursor material may further have a meanparticle size of at not greater than about 10 microns.

According to still another aspect, a method of forming a copper-cladlaminate may include providing a copper foil and forming a dielectriclayer overlying the copper foil. Forming the dielectric layer mayinclude providing a polyimide layer, combining a first resin matrixprecursor component and a first ceramic filler precursor component toform a first forming mixture, and forming the first forming mixture intoa first filled polymer layer overlying the polyimide layer. The firstceramic filler precursor component may include a first filler material.The first filler precursor material may further have a mean particlesize of at not greater than about 10 microns.

According to yet another aspect, a method of forming a printed circuitboard may include providing a copper foil and forming a dielectric layeroverlying the copper foil. Forming the dielectric layer may includeproviding a polyimide layer, combining a first resin matrix precursorcomponent and a first ceramic filler precursor component to form a firstforming mixture, and forming the first forming mixture into a firstfilled polymer layer overlying the polyimide layer. The first ceramicfiller precursor component may include a first filler material. Thefirst filler precursor material may further have a mean particle size ofat not greater than about 10 microns.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments are illustrated by way of example and are not limited to theaccompanying figures.

FIG. 1 includes a diagram showing a dielectric layer forming methodaccording to embodiments described herein;

FIGS. 2a and 2b include illustrations showing the configuration ofdielectric layers formed according to embodiments described herein;

FIG. 3 includes a diagram showing a copper-clad laminate forming methodaccording to embodiments described herein;

FIGS. 4a and 4b include illustrations showing the configuration ofcopper-clad laminates formed according to embodiments described herein;

FIG. 5 includes a diagram showing a printed circuit board forming methodaccording to embodiments described herein; and

FIGS. 6a and 6b include illustrations showing the configuration ofprinted circuit boards formed according to embodiments described herein.

Skilled artisans appreciate that elements in the figures are illustratedfor simplicity and clarity and have not necessarily been drawn to scale.

DETAILED DESCRIPTION

The following discussion will focus on specific implementations andembodiments of the teachings. The detailed description is provided toassist in describing certain embodiments and should not be interpretedas a limitation on the scope or applicability of the disclosure orteachings. It will be appreciated that other embodiments can be usedbased on the disclosure and teachings as provided herein.

The terms “comprises,” “comprising,” “includes,” “including,” “has,”“having” or any other variation thereof, are intended to cover anon-exclusive inclusion. For example, a method, article, or apparatusthat comprises a list of features is not necessarily limited only tothose features but may include other features not expressly listed orinherent to such method, article, or apparatus. Further, unlessexpressly stated to the contrary, “or” refers to an inclusive-or and notto an exclusive-or. For example, a condition A or B is satisfied by anyone of the following: A is true (or present) and B is false (or notpresent), A is false (or not present) and B is true (or present), andboth A and B are true (or present).

Also, the use of “a” or “an” is employed to describe elements andcomponents described herein. This is done merely for convenience and togive a general sense of the scope of the invention. This descriptionshould be read to include one, at least one, or the singular as alsoincluding the plural, or vice versa, unless it is clear that it is meantotherwise. For example, when a single item is described herein, morethan one item may be used in place of a single item. Similarly, wheremore than one item is described herein, a single item may be substitutedfor that more than one item.

Embodiments described herein are generally directed to a dielectricsubstrate that may include a polyimide layer and a first filled polymerlayer overlying the polyimide layer, where the first filled polymerlayer may include a first resin matrix component, and a first ceramicfiller component.

Referring first to a method of forming a dielectric substrate, FIG. 1includes a diagram showing a forming method 100 for forming a dielectricsubstrate according to embodiments described herein. According toparticular embodiments, the forming method 100 may include a first step110 of providing a polyimide layer, a second step 120 of combining afirst resin matrix precursor component and a first ceramic fillerprecursor component to form a first forming mixture, and a third step130 of forming the first forming mixture into a first filled polymerlayer overlying the polyimide layer.

According to particular embodiments, the first ceramic filler precursorcomponent may include a first filler precursor material, which may haveparticular characteristics that may improve performance of thedielectric substrate formed by the forming method 100.

According to certain embodiments, the first filler precursor materialmay have a particular size distribution. For purposes of embodimentsdescribed herein, the particle size distribution of a material, forexample, the particle size distribution of a first filler precursormaterial may be described using any combination of particle sizedistribution D-values D₁₀, D₅₀ and D₉₀. The D₁₀ value from a particlesize distribution is defined as a particle size value where 10% of theparticles are smaller than the value and 90% of the particles are largerthan the value. The D₅₀ value from a particle size distribution isdefined as a particle size value where 50% of the particles are smallerthan the value and 50% of the particles are larger than the value. TheD₉₀ value from a particle size distribution is defined as a particlesize value where 90% of the particles are smaller than the value and 10%of the particles are larger than the value. For purposes of embodimentsdescribed herein, particle size measurements for a particular materialare made using laser diffraction spectroscopy.

According to certain embodiments, the first filler precursor materialmay have a particular size distribution D₁₀ value. For example, the D₁₀of the first filler precursor material may be at least about 0.2microns, such as, at least about 0.3 or at least about 0.4 or at leastabout 0.5 or at least about 0.6 microns or at least about 0.7 microns orat least about 0.8 microns or at least about 0.9 microns or at leastabout 1.0 microns or at least about 1.1 microns or even at least about1.2 microns. According to still other embodiments, the D₁₀ of the firstfiller material may be not greater than about 1.6 microns, such as, notgreater than about 1.5 microns or even not greater than about 1.4microns. It will be appreciated that the D₁₀ of the first fillerprecursor material may be any value between, and including, any of theminimum and maximum values noted above. It will be further appreciatedthat the D₁₀ of the first filler precursor material may be within arange between, and including, any of the minimum and maximum valuesnoted above.

According to other embodiments, the first filler precursor material mayhave a particular size distribution D₅₀ value. For example, the D₅₀ ofthe first filler precursor material may be at least about 0.5 microns,such as, at least about 0.6 or at least about 0.7 or at least about 0.8or at least about 0.9 microns or at least about 1.0 microns or at leastabout 1.1 microns or at least about 1.2 microns or at least about 1.3microns or at least about 1.4 microns or at least about 1.5 microns orat least about 1.6 microns or at least about 1.7 microns or at leastabout 1.8 microns or at least about 1.9 microns or at least about 2.0microns or at least about 2.1 microns or even at least about 2.2microns. According to still other embodiments, the D₅₀ of the firstfiller material may be not greater than about 2.7 microns, such as, notgreater than about 2.6 microns or not greater than about 2.5 microns oreven not greater than about 2.4. It will be appreciated that the D₅₀ ofthe first filler precursor material may be any value between, andincluding, any of the minimum and maximum values noted above. It will befurther appreciated that the D₅₀ of the first filler precursor materialmay be within a range between, and including, any of the minimum andmaximum values noted above.

According to other embodiments, the first filler precursor material mayhave a particular size distribution D₉₀ value. For example, the D₉₀ ofthe first filler precursor material may be at least about 0.8 microns,such as, at least about 0.9 or at least about 1.0 or at least about 1.1or at least about 1.2 or at least about 1.3 or at least about 1.4 or atleast about 1.5 or at least about 1.6 microns or at least about 1.7microns or at least about 1.8 microns or at least about 1.9 microns orat least about 2.0 microns or at least about 2.1 microns or at leastabout 2.2 microns or at least about 2.3 microns or at least about 2.4microns or at least about 2.5 microns or at least about 2.6 microns oreven at least about 2.7 microns. According to still other embodiments,the D₉₀ of the first filler material may be not greater than about 8.0microns, such as, not greater than about 7.5 microns or not greater thanabout 7.0 microns or not greater than about 6.5 microns or not greaterthan about 6.0 microns or not greater than about 5.5 microns or notgreater than about 5.4 microns or not greater than about 5.3 microns ornot greater than about 5.2 or even not greater than about 5.1 microns.It will be appreciated that the D₉₀ of the first filler precursormaterial may be any value between, and including, any of the minimum andmaximum values noted above. It will be further appreciated that the D₉₀of the first filler precursor material may be within a range between,and including, any of the minimum and maximum values noted above.

According to still other embodiments, the first filler precursormaterial may have a particular mean particle size as measured usinglaser diffraction spectroscopy. For example, the mean particle size ofthe first filler precursor material may be not greater than about 10microns, such as, not greater than about 9 microns or not greater thanabout 8 microns or not greater than about 7 microns or not greater thanabout 6 microns or not greater than about 5 microns or not greater thanabout 4 microns or not greater than about 3 microns or even not greaterthan about 2 microns. It will be appreciated that the mean particle sizeof the first filler precursor material may be any value between, andincluding, any of the values noted above. It will be further appreciatedthat the mean particle size of the first filler precursor material maybe within a range between, and including, any of the values noted above.

According to still other embodiments, the first filler precursormaterial may be described as having a particular particle sizedistribution span (PSDS), where the PSDS of the first filler precursormaterial is equal to (D₉₀−D₁₀)/D₅₀, where D₉₀ is equal to a D₉₀ particlesize distribution measurement of the first filler precursor material,D₁₀ is equal to a D₁₀ particle size distribution measurement of thefirst filler precursor material, and D₅₀ is equal to a D₅₀ particle sizedistribution measurement of the first filler precursor material. Forexample, the PSDS of the first filler precursor material may be notgreater than about 5, such as, not greater than about 4.5 or not greaterthan about 4.0 or not greater than about 3.5 or not greater than about3.0 or even not greater than about 2.5. It will be appreciated that thePSDS of the first filler precursor material may be any value between,and including, any of the values noted above. It will be furtherappreciated that the PSDS of the first filler precursor material may bewithin a range between, and including, any of the values noted above.

According to still other embodiments, the first filler precursormaterial may be described as having a particular average surface area asmeasured using Brunauer-Emmett-Teller (BET) surface area analysis(Nitrogen Adsorption). For example, the first filler precursor materialmay have an average surface area of not greater than about 10 m²/g, suchas, not greater than about 7.9 m²/g or not greater than about 7.5 m²/gor not greater than about 7.0 m²/g or not greater than about 6.5 m²/g ornot greater than about 6.0 m²/g or not greater than about 5.5 m²/g ornot greater than about 5.0 m²/g or not greater than about 4.5 m²/g ornot greater than about 4.0 m²/g or even not greater than about 3.5 m²/g.According to still other embodiments, the first filler precursormaterial may have an average surface area of at least about 1.2 m²/g,such as, at least about 2.2 m²/g. It will be appreciated that theaverage surface area of the first filler precursor material may be anyvalue between, and including, any of the minimum and maximum valuesnoted above. It will be further appreciated that the average surfacearea of the first filler precursor material may be within a rangebetween, and including, any of the minimum and maximum values notedabove.

According to other embodiments, the first filler precursor material mayinclude a particular material. According to particular embodiments, thefirst filler precursor material may include a silica-based compound.According to still other embodiments, the first filler precursormaterial may consist of a silica-based compound. According to otherembodiments, the first filler precursor material may include silica.According to still other embodiments, the first filler precursormaterial may consist of silica.

According to yet other embodiments, the first forming mixture mayinclude a particular content of the first ceramic filler precursorcomponent. For example, the content of the first ceramic fillerprecursor component may be at least about 30 vol. % for a total volumeof the first forming mixture, such as, at least about 31 vol. % or atleast about 32 vol. % or at least about 33 vol. % or at least about 34vol. % or at least about 35 vol. % or at least about 36 vol. % or atleast about 37 vol. % or at least about 38 vol. % or at least about 39vol. % or at least about 40 vol. % or at least about 41 vol. % or atleast about 42 vol. % or at least about 43 vol. % or at least about 44vol. % or at least about 45 vol. % or at least about 46 vol. % or atleast about 47 vol. % or at least about 48 vol. % or at least about 49vol. % or at least about 50 vol. % or at least about 51 vol. % or atleast about 52 vol. % or at least about 53 vol. % or even at least about54 vol. %. According to still other embodiments, the content of thefirst ceramic filler precursor component may be not greater than about57 vol. % for a total volume of the first forming mixture, such as, notgreater than about 56 vol. % or even not greater than about 55 vol. %.It will be appreciated that the content of the first ceramic fillerprecursor component may be any value between, and including, any of theminimum and maximum values noted above. It will be further appreciatedthat the content of the first ceramic filler precursor component may bewithin a range between, and including, any of the minimum and maximumvalues noted above.

According to still other embodiments, the first ceramic filler precursorcomponent may include a particular content of the first filler precursormaterial. For example, the content of the first filler precursormaterial may be at least about 80 vol. % for a total volume of the firstceramic filler precursor component, such as, at least about 81 vol. % orat least about 82 vol. % or at least about 83 vol. % or at least about84 vol. % or at least about 85 vol. % or at least about 86 vol. % or atleast about 87 vol. % or at least about 88 vol. % or at least about 89vol. % or even at least about 90 vol. %. According to still otherembodiments, the content of the first filler precursor material may benot greater than about 100 vol. % for a total volume of the firstceramic filler precursor component, such as, not greater than about 99vol. % or not greater than about 98 vol. % or not greater than about 97vol. % or not greater than about 96 vol. % or not greater than about 95vol. % or not greater than about 94 vol. % or not greater than about 93vol. % or even not greater than about 92 vol. %. It will be appreciatedthat the content of the first filler precursor material may be any valuebetween, and including, any of the minimum and maximum values notedabove. It will be further appreciated that the content of the firstfiller precursor material may be within a range between, and including,any of the minimum and maximum values noted above.

According to still other embodiments, the first ceramic filler precursorcomponent may include a second filler precursor material.

According to yet other embodiments, the second filler precursor materialmay include a particular material. For example, the second fillerprecursor material may include a high dielectric constant ceramicmaterial, such as, a ceramic material having a dielectric constant of atleast about 14. According to particular embodiments, the second fillerprecursor material may include any high dielectric constant ceramicmaterial, such as, TiO₂, SrTiO₃, ZrTi₂O₆, MgTiO₃, CaTiO₃, BaTiO₄ or anycombination thereof.

According to yet other embodiments, the second filler precursor materialmay include TiO₂. According to still other embodiments, the secondfiller precursor material may consist of TiO₂.

According to still other embodiments, the first ceramic filler precursorcomponent may include a particular content of the second fillerprecursor material. For example, the content of the second fillerprecursor material may be at least about 1 vol. % for a total volume ofthe first ceramic filler precursor component, such as, at least about 2vol. % or at least about 3 vol. % or at least about 4 vol. % or at leastabout 5 vol. % or at least about 6 vol. % or at least about 7 vol. % orat least about 8 vol. % or at least about 9 vol. % or at least about 10vol. %. According to still other embodiments, the content of the secondfiller precursor material may be not greater than about 20 vol. % for atotal volume of the first ceramic filler precursor component, such as,not greater than about 19 vol. % or not greater than about 18 vol. % ornot greater than about 17 vol. % or not greater than about 16 vol. % ornot greater than about 15 vol. % or not greater than about 14 vol. % ornot greater than about 13 vol. % or not greater than about 12 vol. %. Itwill be appreciated that the content of the second filler precursormaterial may be any value between, and including, any of the minimum andmaximum values noted above. It will be further appreciated that thecontent of the second filler precursor material may be within a rangebetween, and including, any of the minimum and maximum values notedabove.

According to yet other embodiments, the first ceramic filler precursorcomponent may include a particular content of amorphous material. Forexample, the first ceramic filler precursor component may include atleast about 97% amorphous material, such as, at least about 98% or evenat least about 99%. It will be appreciated that the content of amorphousmaterial may be any value between, and including, any of the valuesnoted above. It will be further appreciated that the content ofamorphous material may be within a range between, and including, any ofthe values noted above.

According to other embodiments, the first resin matrix precursorcomponent may include a particular material. For example, the firstresin matrix precursor component may include a perfluoropolymer.According to still other embodiments, the first resin matrix precursorcomponent may consist of a perfluoropolymer.

According to yet other embodiments, the perfluoropolymer of the firstresin precursor matrix component may include a copolymer oftetrafluoroethylene (TFE); a copolymer of hexafluoropropylene (HFP); aterpolymer of tetrafluoroethylene (TFE); or any combination thereof.According to other embodiments, the perfluoropolymer of the first resinmatrix precursor component may consist of a copolymer oftetrafluoroethylene (TFE); a copolymer of hexafluoropropylene (HFP); aterpolymer of tetrafluoroethylene (TFE); or any combination thereof.

According to yet other embodiments, the perfluoropolymer of the firstresin matrix precursor component may include polytetrafluoroethylene(PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylenepropylene (FEP), or any combination thereof. According to still otherembodiments, the perfluoropolymer of the first resin matrix precursorcomponent may consist of polytetrafluoroethylene (PTFE), perfluoroalkoxypolymer resin (PFA), fluorinated ethylene propylene (FEP), or anycombination thereof.

According to yet other embodiments, the first forming mixture mayinclude a particular content of the first resin matrix precursorcomponent. For example, the content of the first resin matrix precursorcomponent may be at least about 45 vol. % for a total volume of theforming mixture, such as, at least about 46 vol. % or at least about 47vol. % or at least about 48 vol. % or at least about 49 vol. % or atleast about 50 vol. % or at least about 51 vol. % or at least about 52vol. % or at least about 53 vol. % or at least about 54 vol. % or evenat least about 55 vol. %. According to still other embodiments, thecontent of the first resin matrix precursor component is not greaterthan about 63 vol. % for a total volume of the first forming mixture ornot greater than about 62 vol. % or not greater than about 61 vol. % ornot greater than about 60 vol. % or not greater than about 59 vol. % ornot greater than about 58 vol. % or even not greater than about 57 vol.%. It will be appreciated that the content of the first resin matrixprecursor component may be any value between, and including, any of theminimum and maximum values noted above. It will be further appreciatedthat the content of the first resin matrix precursor component may bewithin a range between, and including, any of the minimum and maximumvalues noted above.

According to yet other embodiments, the first forming mixture mayinclude a particular content of the perfluoropolymer. For example, thecontent of the perfluoropolymer may be at least about 45 vol. % for atotal volume of the forming mixture, such as, at least about 46 vol. %or at least about 47 vol. % or at least about 48 vol. % or at leastabout 49 vol. % or at least about 50 vol. % or at least about 51 vol. %or at least about 52 vol. % or at least about 53 vol. % or at leastabout 54 vol. % or even at least about 55 vol. %. According to stillother embodiments, the content of the perfluoropolymer may be notgreater than about 63 vol. % for a total volume of the first formingmixture, such as, not greater than about 62 vol. % or not greater thanabout 61 vol. % or not greater than about 60 vol. % or not greater thanabout 59 vol. % or not greater than about 58 vol. % or even not greaterthan about 57 vol. %. It will be appreciated that the content of theperfluoropolymer may be any value between, and including, any of theminimum and maximum values noted above. It will be further appreciatedthat the content of the perfluoropolymer may be within a range between,and including, any of the minimum and maximum values noted above.

According to yet another embodiment, the second step 120 may furtherinclude combining a second resin matrix precursor component and a secondceramic filler precursor component to for a second forming mixture, andthe third step 130 may further include forming the second formingmixture into a second filled polymer layer underlying the polyimidelayer.

According to particular embodiments, the second ceramic filler precursorcomponent may include a third filler precursor material, which may haveparticular characteristics that may improve performance of thedielectric substrate formed by the forming method 100.

According to certain embodiments, the third filler precursor materialmay have a particular size distribution. For purposes of embodimentsdescribed herein, the particle size distribution of a material, forexample, the particle size distribution of a third filler precursormaterial may be described using any combination of particle sizedistribution D-values D₁₀, D₅₀ and D₉₀. The D₁₀ value from a particlesize distribution is defined as a particle size value where 10% of theparticles are smaller than the value and 90% of the particles are largerthan the value. The D₅₀ value from a particle size distribution isdefined as a particle size value where 50% of the particles are smallerthan the value and 50% of the particles are larger than the value. TheD₉₀ value from a particle size distribution is defined as a particlesize value where 90% of the particles are smaller than the value and 10%of the particles are larger than the value. For purposes of embodimentsdescribed herein, particle size measurements for a particular materialare made using laser diffraction spectroscopy.

According to certain embodiments, the third filler precursor materialmay have a particular size distribution D₁₀ value. For example, the D₁₀of the third filler precursor material may be at least about 0.2microns, such as, at least about 0.3 microns or at least about 0.4microns or at least about 0.5 microns or at least about 0.6 microns orat least about 0.7 microns or at least about 0.8 microns or at leastabout 0.9 microns or at least about 1.0 microns or at least about 1.1microns or even at least about 1.2 microns. According to still otherembodiments, the D₁₀ of the third filler material may be not greaterthan about 1.6 microns, such as, not greater than about 1.5 microns oreven not greater than about 1.4 microns. It will be appreciated that theD₁₀ of the third filler precursor material may be any value between, andincluding, any of the minimum and maximum values noted above. It will befurther appreciated that the D₁₀ of the third filler precursor materialmay be within a range between, and including, any of the minimum andmaximum values noted above.

According to other embodiments, the third filler precursor material mayhave a particular size distribution D₅₀ value. For example, the D₅₀ ofthe third filler precursor material may be at least about 0.5 microns,such as, at least about 0.6 microns or at least about 0.7 microns or atleast about 0.8 microns or at least about 0.9 microns or at least about1.0 microns or at least about 1.1 microns or at least about 1.2 micronsor at least about 1.3 microns or at least about 1.4 microns or at leastabout 1.5 microns or at least about 1.6 microns or at least about 1.7microns or at least about 1.8 microns or at least about 1.9 microns orat least about 2.0 microns or at least about 2.1 microns or even atleast about 2.2 microns. According to still other embodiments, the D₅₀of the third filler material may be not greater than about 2.7 microns,such as, not greater than about 2.6 microns or not greater than about2.5 microns or even not greater than about 2.4. It will be appreciatedthat the D₅₀ of the third filler precursor material may be any valuebetween, and including, any of the minimum and maximum values notedabove. It will be further appreciated that the D₅₀ of the third fillerprecursor material may be within a range between, and including, any ofthe minimum and maximum values noted above.

According to other embodiments, the third filler precursor material mayhave a particular size distribution D₉₀ value. For example, the D₉₀ ofthe third filler precursor material may be at least about 0.8 microns,such as, at least about 0.9 or at least about 1.0 or at least about 1.1or at least about 1.2 or at least about 1.3 or at least about 1.4 or atleast about 1.5 or at least about 1.6 microns or at least about 1.7microns or at least about 1.8 microns or at least about 1.9 microns orat least about 2.0 microns or at least about 2.1 microns or at leastabout 2.2 microns or at least about 2.3 microns or at least about 2.4microns or at least about 2.5 microns or at least about 2.6 microns oreven at least about 2.7 microns. According to still other embodiments,the D₉₀ of the third filler material may be not greater than about 8.0microns, such as, not greater than about 7.5 microns or not greater thanabout 7.0 microns or not greater than about 6.5 microns or not greaterthan about 6.0 microns or not greater than about 5.5 microns or notgreater than about 5.4 microns or not greater than about 5.3 microns ornot greater than about 5.2 or even not greater than about 5.1 microns.It will be appreciated that the D₉₀ of the third filler precursormaterial may be any value between, and including, any of the minimum andmaximum values noted above. It will be further appreciated that the D₉₀of the third filler precursor material may be within a range between,and including, any of the minimum and maximum values noted above.

According to still other embodiments, the third filler precursormaterial may have a particular average particle size as measured usinglaser diffraction spectroscopy. For example, the mean particle size ofthe third filler precursor material may be not greater than about 10microns, such as, not greater than about 9 microns or not greater thanabout 8 microns or not greater than about 7 microns or not greater thanabout 6 microns or not greater than about 5 microns or not greater thanabout 4 microns or not greater than about 3 microns or even not greaterthan about 2 microns. It will be appreciated that the mean particle sizeof the third filler precursor material may be any value between, andincluding, any of the values noted above. It will be further appreciatedthat the mean particle size of the third filler precursor material maybe within a range between, and including, any of the values noted above.

According to still other embodiments, the third filler precursormaterial may be described as having a particular particle sizedistribution span (PSDS), where the PSDS of the third filler precursormaterial is equal to (D₉₀−D₁₀)/D₅₀, where D₉₀ is equal to a D₉₀ particlesize distribution measurement of the third filler precursor material,D₁₀ is equal to a D₁₀ particle size distribution measurement of thethird filler precursor material, and D₅₀ is equal to a D₅₀ particle sizedistribution measurement of the third filler precursor material. Forexample, the PSDS of the third filler precursor material may be notgreater than about 5, such as, not greater than about 4.5 or not greaterthan about 4.0 or not greater than about 3.5 or not greater than about3.0 or even not greater than about 2.5. It will be appreciated that thePSDS of the third filler precursor material may be any value between,and including, any of the values noted above. It will be furtherappreciated that the PSDS of the third filler precursor material may bewithin a range between, and including, any of the values noted above.

According to still other embodiments, the third filler precursormaterial may be described as having a particular average surface area asmeasured using Brunauer-Emmett-Teller (BET) surface area analysis(Nitrogen Adsorption). For example, the third filler precursor materialmay have an average surface area of not greater than about 10 m²/g, suchas, not greater than about 7.9 m²/g or not greater than about 7.5 m²/gor not greater than about 7.0 m²/g or not greater than about 6.5 m²/g ornot greater than about 6.0 m²/g or not greater than about 5.5 m²/g ornot greater than about 5.0 m²/g or not greater than about 4.5 m²/g ornot greater than about 4.0 m²/g or even not greater than about 3.5 m²/g.According to still other embodiments, the third filler precursormaterial may have an average surface area of at least about 1.2 m²/g,such as, at least about 2.4 m²/g. It will be appreciated that theaverage surface area of the third filler precursor material may be anyvalue between, and including, any of the minimum and maximum valuesnoted above. It will be further appreciated that the average surfacearea of the third filler precursor material may be within a rangebetween, and including, any of the minimum and maximum values notedabove.

According to other embodiments, the third filler precursor material mayinclude a particular material. According to particular embodiments, thethird filler precursor material may include a silica-based compound.According to still other embodiments, the third filler precursormaterial may consist of a silica-based compound. According to otherembodiments, the third filler precursor material may include silica.According to still other embodiments, the third filler precursormaterial may consist of silica.

According to yet other embodiments, the second forming mixture mayinclude a particular content of the second ceramic filler precursorcomponent. For example, the content of the second ceramic fillerprecursor component may be at least about 30 vol. % for a total volumeof the second forming mixture, such as, at least about 31 vol. % or atleast about 32 vol. % or at least about 33 vol. % or at least about 34vol. % or at least about 35 vol. % or at least about 36 vol. % or atleast about 37 vol. % or at least about 38 vol. % or at least about 39vol. % or at least about 40 vol. % or at least about 41 vol. % or atleast about 42 vol. % or at least about 43 vol. % or at least about 44vol. % or at least about 45 vol. % or at least about 46 vol. % or atleast about 47 vol. % or at least about 48 vol. % or at least about 49vol. % or at least about 50 vol. % or at least about 51 vol. % or atleast about 52 vol. % or at least about 53 vol. % or even at least about54 vol. %. According to still other embodiments, the content of thesecond ceramic filler precursor component may be not greater than about57 vol. % for a total volume of the second forming mixture, such as, notgreater than about 56 vol. % or even not greater than about 55 vol. %.It will be appreciated that the content of the second ceramic fillerprecursor component may be any value between, and including, any of theminimum and maximum values noted above. It will be further appreciatedthat the content of the second ceramic filler precursor component may bewithin a range between, and including, any of the minimum and maximumvalues noted above.

According to still other embodiments, the second ceramic fillerprecursor component may include a particular content of the third fillerprecursor material. For example, the content of the third fillerprecursor material may be at least about 80 vol. % for a total volume ofthe second ceramic filler precursor component, such as, at least about81 vol. % or at least about 82 vol. % or at least about 83 vol. % or atleast about 84 vol. % or at least about 85 vol. % or at least about 86vol. % or at least about 87 vol. % or at least about 88 vol. % or atleast about 89 vol. % or even at least about 90 vol. %. According tostill other embodiments, the content of the third filler precursormaterial may be not greater than about 100 vol. % for a total volume ofthe second ceramic filler precursor component, such as, not greater thanabout 99 vol. % or not greater than about 98 vol. % or not greater thanabout 97 vol. % or not greater than about 96 vol. % or not greater thanabout 95 vol. % or not greater than about 94 vol. % or not greater thanabout 93 vol. % or even not greater than about 92 vol. %. It will beappreciated that the content of the third filler precursor material maybe any value between, and including, any of the minimum and maximumvalues noted above. It will be further appreciated that the content ofthe third filler precursor material may be within a range between, andincluding, any of the minimum and maximum values noted above.

According to still other embodiments, the second ceramic fillerprecursor component may include a fourth filler precursor material.

According to yet other embodiments, the fourth filler precursor materialmay include a particular material. For example, the fourth fillerprecursor material may include a high dielectric constant ceramicmaterial, such as, a ceramic material having a dielectric constant of atleast about 14. According to particular embodiments, the fourth fillerprecursor material may include any high dielectric constant ceramicmaterial, such as, TiO₂, SrTiO₃, ZrTi₂O₆, MgTiO₃, CaTiO₃, BaTiO₄ or anycombination thereof.

According to yet other embodiments, the fourth filler precursor materialmay include TiO₂. According to still other embodiments, the fourthfiller precursor material may consist of TiO₂.

According to still other embodiments, the second ceramic fillerprecursor component may include a particular content of the fourthfiller precursor material. For example, the content of the fourth fillerprecursor material may be at least about 1 vol. % for a total volume ofthe second ceramic filler precursor component, such as, at least about 2vol. % or at least about 3 vol. % or at least about 4 vol. % or at leastabout 5 vol. % or at least about 6 vol. % or at least about 7 vol. % orat least about 8 vol. % or at least about 9 vol. % or at least about 10vol. %. According to still other embodiments, the content of the fourthfiller precursor material may be not greater than about 20 vol. % for atotal volume of the second ceramic filler precursor component, such as,not greater than about 19 vol. % or not greater than about 18 vol. % ornot greater than about 17 vol. % or not greater than about 16 vol. % ornot greater than about 15 vol. % or not greater than about 14 vol. % ornot greater than about 13 vol. % or not greater than about 12 vol. %. Itwill be appreciated that the content of the fourth filler precursormaterial may be any value between, and including, any of the minimum andmaximum values noted above. It will be further appreciated that thecontent of the fourth filler precursor material may be within a rangebetween, and including, any of the minimum and maximum values notedabove.

According to yet other embodiments, the second ceramic filler precursorcomponent may include a particular content of amorphous material. Forexample, the second ceramic filler precursor component may include atleast about 97% amorphous material, such as, at least about 98% or evenat least about 99%. It will be appreciated that the content of amorphousmaterial may be any value between, and including, any of the valuesnoted above. It will be further appreciated that the content ofamorphous material may be within a range between, and including, any ofthe values noted above.

According to other embodiments, the second resin matrix precursorcomponent may include a particular material. For example, the secondresin matrix precursor component may include a perfluoropolymer.According to still other embodiments, the second resin matrix precursorcomponent may consist of a perfluoropolymer.

According to yet other embodiments, the perfluoropolymer of the firstresin precursor matrix component may include a copolymer oftetrafluoroethylene (TFE); a copolymer of hexafluoropropylene (HFP); aterpolymer of tetrafluoroethylene (TFE); or any combination thereof.According to other embodiments, the perfluoropolymer of the second resinmatrix precursor component may consist of a copolymer oftetrafluoroethylene (TFE); a copolymer of hexafluoropropylene (HFP); aterpolymer of tetrafluoroethylene (TFE); or any combination thereof.

According to yet other embodiments, the perfluoropolymer of the secondresin matrix precursor component may include polytetrafluoroethylene(PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylenepropylene (FEP), or any combination thereof. According to still otherembodiments, the perfluoropolymer of the second resin matrix precursorcomponent may consist of polytetrafluoroethylene (PTFE), perfluoroalkoxypolymer resin (PFA), fluorinated ethylene propylene (FEP), or anycombination thereof.

According to yet other embodiments, the second forming mixture mayinclude a particular content of the second resin matrix precursorcomponent. For example, the content of the second resin matrix precursorcomponent may be at least about 45 vol. % for a total volume of theforming mixture, such as, at least about 46 vol. % or at least about 47vol. % or at least about 48 vol. % or at least about 49 vol. % or atleast about 50 vol. % or at least about 51 vol. % or at least about 52vol. % or at least about 53 vol. % or at least about 54 vol. % or evenat least about 55 vol. %. According to still other embodiments, thecontent of the second resin matrix precursor component is not greaterthan about 63 vol. % for a total volume of the second forming mixture ornot greater than about 62 vol. % or not greater than about 61 vol. % ornot greater than about 60 vol. % or not greater than about 59 vol. % ornot greater than about 58 vol. % or even not greater than about 57 vol.%. It will be appreciated that the content of the second resin matrixprecursor component may be any value between, and including, any of theminimum and maximum values noted above. It will be further appreciatedthat the content of the second resin matrix precursor component may bewithin a range between, and including, any of the minimum and maximumvalues noted above.

According to yet other embodiments, the second forming mixture mayinclude a particular content of the perfluoropolymer. For example, thecontent of the perfluoropolymer may be at least about 45 vol. % for atotal volume of the forming mixture, such as, at least about 46 vol. %or at least about 47 vol. % or at least about 48 vol. % or at leastabout 49 vol. % or at least about 50 vol. % or at least about 51 vol. %or at least about 52 vol. % or at least about 53 vol. % or at leastabout 54 vol. % or even at least about 55 vol. %. According to stillother embodiments, the content of the perfluoropolymer may be notgreater than about 63 vol. % for a total volume of the second formingmixture, such as, not greater than about 62 vol. % or not greater thanabout 61 vol. % or not greater than about 60 vol. % or not greater thanabout 59 vol. % or not greater than about 58 vol. % or even not greaterthan about 57 vol. %. It will be appreciated that the content of theperfluoropolymer may be any value between, and including, any of theminimum and maximum values noted above. It will be further appreciatedthat the content of the perfluoropolymer may be within a range between,and including, any of the minimum and maximum values noted above.

Referring now to embodiments of the dielectric substrate formedaccording to forming method 100, FIG. 2a includes a diagram of adielectric substrate 200. As shown in FIG. 2a , the dielectric substrate200 may include a polyimide layer 202 and a first filled polymer layer204 overlying the polyimide layer. As shown in FIG. 2a , the firstfilled polymer layer 204 may include a first resin matrix component 210and a first ceramic filler component 220.

According to particular embodiments, the first ceramic filler component220 may include a first filler material, which may have particularcharacteristics that may improve performance of the dielectric substrate200.

According to certain embodiments, the first filler material of the firstceramic filler component 220 may have a particular size distribution.For purposes of embodiments described herein, the particle sizedistribution of a material, for example, the particle size distributionof a first filler material may be described using any combination ofparticle size distribution D-values D₁₀, D₅₀ and D₉₀. The D₁₀ value froma particle size distribution is defined as a particle size value where10% of the particles are smaller than the value and 90% of the particlesare larger than the value. The D₅₀ value from a particle sizedistribution is defined as a particle size value where 50% of theparticles are smaller than the value and 50% of the particles are largerthan the value. The D₉₀ value from a particle size distribution isdefined as a particle size value where 90% of the particles are smallerthan the value and 10% of the particles are larger than the value. Forpurposes of embodiments described herein, particle size measurements fora particular material are made using laser diffraction spectroscopy.

According to certain embodiments, the first filler material of the firstceramic filler component 220 may have a particular size distribution D₁₀value. For example, the D₁₀ of the first filler material may be at leastabout 0.2 microns, such as, at least about 0.3 microns or at least about0.4 microns or at least about 0.5 microns or at least about 0.6 micronsor at least about 0.7 microns or at least about 0.8 microns or at leastabout 0.9 microns or at least about 1.0 microns or at least about 1.1microns or even at least about 1.2 microns. According to still otherembodiments, the D₁₀ of the first filler material may be not greaterthan about 1.6 microns, such as, not greater than about 1.5 microns oreven not greater than about 1.4 microns. It will be appreciated that theD₁₀ of the first filler material may be any value between, andincluding, any of the minimum and maximum values noted above. It will befurther appreciated that the D₁₀ of the first filler material may bewithin a range between, and including, any of the minimum and maximumvalues noted above.

According to other embodiments, the first filler material of the firstceramic filler component 220 may have a particular size distribution D₅₀value. For example, the D₅₀ of the first filler material may be at leastabout 0.5 microns, such as, at least about 0.6 microns or at least about0.7 microns or at least about 0.8 microns or at least about 0.9 micronsor at least about 1.0 microns or at least about 1.1 microns or at leastabout 1.2 microns or at least about 1.3 microns or at least about 1.4microns or at least about 1.5 microns or at least about 1.6 microns orat least about 1.7 microns or at least about 1.8 microns or at leastabout 1.9 microns or at least about 2.0 microns or at least about 2.1microns or even at least about 2.2 microns. According to still otherembodiments, the D₅₀ of the first filler material may be not greaterthan about 2.7 microns, such as, not greater than about 2.6 microns ornot greater than about 2.5 microns or even not greater than about 2.4.It will be appreciated that the D₅₀ of the first filler material may beany value between, and including, any of the minimum and maximum valuesnoted above. It will be further appreciated that the D₅₀ of the firstfiller material may be within a range between, and including, any of theminimum and maximum values noted above.

According to other embodiments, the first filler material of the firstceramic filler component 220 may have a particular size distribution D₉₀value. For example, the D₉₀ of the first filler material may be at leastabout 0.8 microns, such as, at least about 0.9 or at least about 1.0 orat least about 1.1 or at least about 1.2 or at least about 1.3 or atleast about 1.4 or at least about 1.5 or at least about 1.6 microns orat least about 1.7 microns or at least about 1.8 microns or at leastabout 1.9 microns or at least about 2.0 microns or at least about 2.1microns or at least about 2.2 microns or at least about 2.3 microns orat least about 2.4 microns or at least about 2.5 microns or at leastabout 2.6 microns or even at least about 2.7 microns. According to stillother embodiments, the D₉₀ of the first filler material may be notgreater than about 8.0 microns, such as, not greater than about 7.5microns or not greater than about 7.0 microns or not greater than about6.5 microns or not greater than about 6.0 microns or not greater thanabout 5.5 microns or not greater than about 5.4 microns or not greaterthan about 5.3 microns or not greater than about 5.2 or even not greaterthan about 5.1 microns. It will be appreciated that the D₉₀ of the firstfiller material may be any value between, and including, any of theminimum and maximum values noted above. It will be further appreciatedthat the D₉₀ of the first filler material may be within a range between,and including, any of the minimum and maximum values noted above.

According to still other embodiments, the first filler material of thefirst ceramic filler component 220 may have a particular averageparticle size as measured according to laser diffraction spectroscopy.For example, the mean particle size of the first filler material may benot greater than about 10 microns, such as, not greater than about 9microns or not greater than about 8 microns or not greater than about 7microns or not greater than about 6 microns or not greater than about 5microns or not greater than about 4 microns or not greater than about 3microns or even not greater than about 2 microns. It will be appreciatedthat the mean particle size of the first filler material may be anyvalue between, and including, any of the values noted above. It will befurther appreciated that the mean particle size of the first fillermaterial may be within a range between, and including, any of the valuesnoted above.

According to still other embodiments, the first filler material of thefirst ceramic filler component 220 may be described as having aparticular particle size distribution span (PSDS), where the PSDS isequal to (D₉₀−D₁₀)/D₅₀, where D₉₀ is equal to a D₉₀ particle sizedistribution measurement of the first filler material, D₁₀ is equal to aD₁₀ particle size distribution measurement of the first filler material,and D₅₀ is equal to a D₅₀ particle size distribution measurement of thefirst filler material. For example, the PSDS of the first fillermaterial may be not greater than about 5, such as, not greater thanabout 4.5 or not greater than about 4.0 or not greater than about 3.5 ornot greater than about 3.0 or even not greater than about 2.5. It willbe appreciated that the PSDS of the first filler material may be anyvalue between, and including, any of the values noted above. It will befurther appreciated that the PSDS of the first filler material may bewithin a range between, and including, any of the values noted above.

According to still other embodiments, the first filler material of thefirst ceramic filler component 220 may be described as having aparticular average surface area as measured using Brunauer-Emmett-Teller(BET) surface area analysis (Nitrogen Adsorption). For example, thefirst filler material may have an average surface area of not greaterthan about 10 m²/g, such as, not greater than about 7.9 m²/g or notgreater than about 7.5 m²/g or not greater than about 7.0 m²/g or notgreater than about 6.5 m²/g or not greater than about 6.0 m²/g or notgreater than about 5.5 m²/g or not greater than about 5.0 m²/g or notgreater than about 4.5 m²/g or not greater than about 4.0 m²/g or evennot greater than about 3.5 m²/g. According to still other embodiments,the first filler material may have an average surface area of at leastabout 1.2 m²/g, such as, at least about 2.4 m²/g. It will be appreciatedthat the average surface area of the first filler material may be anyvalue between, and including, any of the minimum and maximum valuesnoted above. It will be further appreciated that the average surfacearea of the first filler material may be within a range between, andincluding, any of the minimum and maximum values noted above.

According to other embodiments, the first filler material of the firstceramic filler component 220 may include a particular material.According to particular embodiments, the first filler material mayinclude a silica-based compound. According to still other embodiments,the first filler material may consist of a silica-based compound.According to other embodiments, the first filler material may includesilica. According to still other embodiments, the first filler materialmay consist of silica.

According to yet other embodiments, the first filled polymer layer 204may include a particular content of the first ceramic filler component220. For example, the content of the ceramic filler component 220 may beat least about 30 vol. % for a total volume of the first filled polymerlayer 204, such as, at least about 31 vol. % or at least about 32 vol. %or at least about 33 vol. % or at least about 34 vol. % or at leastabout 35 vol. % or at least about 36 vol. % or at least about 37 vol. %or at least about 38 vol. % or at least about 39 vol. % or at leastabout 40 vol. % or at least about 41 vol. % or at least about 42 vol. %or at least about 43 vol. % or at least about 44 vol. % or at leastabout 45 vol. % or at least about 46 vol. % or at least about 47 vol. %or at least about 48 vol. % or at least about 49 vol. % or at leastabout 50 vol. % or at least about 51 vol. % or at least about 52 vol. %or at least about 53 vol. % or even at least about 54 vol. %. Accordingto still other embodiments, the content of the ceramic filler component220 may be not greater than about 57 vol. % for a total volume of thefirst filled polymer layer 204, such as, not greater than about 56 vol.% or even not greater than about 55 vol. %. It will be appreciated thatthe content of the ceramic filler component 220 may be any valuebetween, and including, any of the minimum and maximum values notedabove. It will be further appreciated that the content of the ceramicfiller component 220 may be within a range between, and including, anyof the minimum and maximum values noted above.

According to still other embodiments, the first ceramic filler component220 may include a particular content of the first filler material. Forexample, the content of the first filler material may be at least about80 vol. % for a total volume of the first ceramic filler component 220,such as, at least about 81 vol. % or at least about 82 vol. % or atleast about 83 vol. % or at least about 84 vol. % or at least about 85vol. % or at least about 86 vol. % or at least about 87 vol. % or atleast about 88 vol. % or at least about 89 vol. % or even at least about90 vol. %. According to still other embodiments, the content of thefirst filler material may be not greater than about 100 vol. % for atotal volume of the first ceramic filler component 220, such as, notgreater than about 99 vol. % or not greater than about 98 vol. % or notgreater than about 97 vol. % or not greater than about 96 vol. % or notgreater than about 95 vol. % or not greater than about 94 vol. % or notgreater than about 93 vol. % or even not greater than about 92 vol. %.It will be appreciated that the content of the first filler material maybe any value between, and including, any of the minimum and maximumvalues noted above. It will be further appreciated that the content ofthe first filler material may be within a range between, and including,any of the minimum and maximum values noted above.

According to still other embodiments, the first ceramic filler component220 may include a second filler material.

According to yet other embodiments, the second filler material of thefirst ceramic filler component 220 may include a particular material.For example, the second filler material may include a high dielectricconstant ceramic material, such as, a ceramic material having adielectric constant of at least about 14. According to particularembodiments, the second filler material of the first ceramic fillercomponent 220 may include any high dielectric constant ceramic material,such as, TiO₂, SrTiO₃, ZrTi₂O₆, MgTiO₃, CaTiO₃, BaTiO₄ or anycombination thereof.

According to yet other embodiments, the second filler material of thefirst ceramic filler component 220 may include TiO₂. According to stillother embodiments, the second filler material may consist of TiO₂.

According to still other embodiments, the first ceramic filler component220 may include a particular content of the second filler material. Forexample, the content of the second filler material may be at least about1 vol. % for a total volume of the first ceramic filler component 220,such as, at least about 2 vol. % or at least about 3 vol. % or at leastabout 4 vol. % or at least about 5 vol. % or at least about 6 vol. % orat least about 7 vol. % or at least about 8 vol. % or at least about 9vol. % or at least about 10 vol. %. According to still otherembodiments, the content of the second filler material may be notgreater than about 20 vol. % for a total volume of the first ceramicfiller component 220, such as, not greater than about 19 vol. % or notgreater than about 18 vol. % or not greater than about 17 vol. % or notgreater than about 16 vol. % or not greater than about 15 vol. % or notgreater than about 14 vol. % or not greater than about 13 vol. % or notgreater than about 12 vol. %. It will be appreciated that the content ofthe second filler material may be any value between, and including, anyof the minimum and maximum values noted above. It will be furtherappreciated that the content of the second filler material may be withina range between, and including, any of the minimum and maximum valuesnoted above.

According to yet other embodiments, the first ceramic filler component220 may include a particular content of amorphous material. For example,the first ceramic filler component 220 may include at least about 97%amorphous material, such as, at least about 98% or even at least about99%. It will be appreciated that the content of amorphous material maybe any value between, and including, any of the values noted above. Itwill be further appreciated that the content of amorphous material maybe within a range between, and including, any of the values noted above.

According to other embodiments, the first resin matrix component 210 mayinclude a particular material. For example, the first resin matrixcomponent 210 may include a perfluoropolymer. According to still otherembodiments, the first resin matrix component 210 may consist of aperfluoropolymer.

According to yet other embodiments, the perfluoropolymer of the firstresin matrix component 210 may include a copolymer oftetrafluoroethylene (TFE); a copolymer of hexafluoropropylene (HFP); aterpolymer of tetrafluoroethylene (TFE); or any combination thereof.According to other embodiments, the perfluoropolymer of the first resinmatrix component 210 may consist of a copolymer of tetrafluoroethylene(TFE); a copolymer of hexafluoropropylene (HFP); a terpolymer oftetrafluoroethylene (TFE); or any combination thereof.

According to yet other embodiments, the perfluoropolymer of the firstresin matrix component 210 may include polytetrafluoroethylene (PTFE),perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene(FEP), or any combination thereof. According to still other embodiments,the perfluoropolymer of the first resin matrix component 210 may consistof polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA),fluorinated ethylene propylene (FEP), or any combination thereof.

According to yet other embodiments, the first filled polymer layer 204may include a particular content of the first resin matrix component210. For example, the content of the first resin matrix component 210may be at least about 45 vol. % for a total volume of the first filledpolymer layer 204, such as, at least about 46 vol. % or at least about47 vol. % or at least about 48 vol. % or at least about 49 vol. % or atleast about 50 vol. % or at least about 51 vol. % or at least about 52vol. % or at least about 53 vol. % or at least about 54 vol. % or evenat least about 55 vol. %. According to still other embodiments, thecontent of the first resin matrix component 210 is not greater thanabout 63 vol. % for a total volume of the first filled polymer layer 204or not greater than about 62 vol. % or not greater than about 61 vol. %or not greater than about 60 vol. % or not greater than about 59 vol. %or not greater than about 58 vol. % or even not greater than about 57vol. %. It will be appreciated that the content of the first resinmatrix component 210 may be any value between, and including, any of theminimum and maximum values noted above. It will be further appreciatedthat the content of the first resin matrix component 210 may be within arange between, and including, any of the minimum and maximum valuesnoted above.

According to yet other embodiments, the first filled polymer layer 204may include a particular content of the perfluoropolymer. For example,the content of the perfluoropolymer may be at least about 45 vol. % fora total volume of the first filled polymer layer 204, such as, at leastabout 46 vol. % or at least about 47 vol. % or at least about 48 vol. %or at least about 49 vol. % or at least about 50 vol. % or at leastabout 51 vol. % or at least about 52 vol. % or at least about 53 vol. %or at least about 54 vol. % or even at least about 55 vol. %. Accordingto still other embodiments, the content of the perfluoropolymer may benot greater than about 63 vol. % for a total volume of the first filledpolymer layer 204, such as, not greater than about 62 vol. % or notgreater than about 61 vol. % or not greater than about 60 vol. % or notgreater than about 59 vol. % or not greater than about 58 vol. % or evennot greater than about 57 vol. %. It will be appreciated that thecontent of the perfluoropolymer may be any value between, and including,any of the minimum and maximum values noted above. It will be furtherappreciated that the content of the perfluoropolymer may be within arange between, and including, any of the minimum and maximum valuesnoted above.

According to still other embodiments, the dielectric substrate 200 mayinclude a particular porosity as measured using x-ray diffraction. Forexample, the porosity of the substrate 200 may be not greater than about10 vol. %, such as, not greater than about 9 vol. % or not greater thanabout 8 vol. % or not greater than about 7 vol. % or not greater thanabout 6 vol. % or even not greater than about 5 vol. %. It will beappreciated that the porosity of the dielectric substrate 200 may be anyvalue between, and including, any of the values noted above. It will befurther appreciated that the porosity of the dielectric substrate 200may be within a range between, and including, any of the values notedabove.

According to yet other embodiments, the dielectric substrate 200 mayhave a particular average thickness. For example, the average thicknessof the dielectric substrate 200 may be at least about 10 microns, suchas, at least about 15 microns or at least about 20 microns or at leastabout 25 microns or at least about 30 microns or at least about 35microns or at least about 40 microns or at least about 45 microns or atleast about 50 microns or at least about 55 microns or at least about 60microns or at least about 65 microns or at least about 70 microns oreven at least about 75 microns. According to yet other embodiments, theaverage thickness of the dielectric substrate 200 may be not greaterthan about 2000 microns, such as, not greater than about 1800 microns ornot greater than about 1600 microns or not greater than about 1400microns or not greater than about 1200 microns or not greater than about1000 microns or not greater than about 800 microns or not greater thanabout 600 microns or not greater than about 400 microns or not greaterthan about 200 microns or not greater than about 190 microns or notgreater than about 180 microns or not greater than about 170 microns ornot greater than about 160 microns or not greater than about 150 micronsor not greater than about 140 microns or not greater than about 120microns or even not greater than about 100 microns. It will beappreciated that the average thickness of the dielectric substrate 200may be any value between, and including, any of the minimum and maximumvalues noted above. It will be further appreciated that the averagethickness of the dielectric substrate 200 may be within a range between,and including, any of the minimum and maximum values noted above.

According to yet other embodiments, the dielectric substrate 200 mayhave a particular dissipation factor (Df) as measured in the rangebetween 5 GHz, 20% RH. For example, the dielectric substrate 200 mayhave a dissipation factor of not greater than about 0.005, such as, notgreater than about 0.004 or not greater than about 0.003 or not greaterthan about 0.002 or not greater than about 0.0019 or not greater thanabout 0.0018 or not greater than about 0.0017 or not greater than about0.0016 or not greater than about 0.0015 or not greater than about0.0014. It will be appreciated that the dissipation factor of thedielectric substrate 200 may be any value between, and including, any ofthe values noted above. It will be further appreciated that thedissipation factor of the dielectric substrate 200 may be within a rangebetween, and including, any of the values noted above.

According to yet other embodiments, the dielectric substrate 200 mayhave a particular dissipation factor (Df) as measured in the rangebetween 5 GHz, 80% RH. For example, the dielectric substrate 200 mayhave a dissipation factor of not greater than about 0.005, such as, notgreater than about 0.004 or not greater than about 0.003 or not greaterthan about 0.002 or not greater than about 0.0019 or not greater thanabout 0.0018 or not greater than about 0.0017 or not greater than about0.0016 or not greater than about 0.0015 or not greater than about0.0014. It will be appreciated that the dissipation factor of thedielectric substrate 200 may be any value between, and including, any ofthe values noted above. It will be further appreciated that thedissipation factor of the dielectric substrate 200 may be within a rangebetween, and including, any of the values noted above.

According to yet other embodiments, the dielectric substrate 200 mayhave a particular dissipation factor (Df) as measured in the rangebetween 10 GHz, 20% RH. For example, the dielectric substrate 200 mayhave a dissipation factor of not greater than about 0.005, such as, notgreater than about 0.004 or not greater than about 0.003 or not greaterthan about 0.002 or not greater than about 0.0019 or not greater thanabout 0.0018 or not greater than about 0.0017 or not greater than about0.0016 or not greater than about 0.0015 or not greater than about0.0014. It will be appreciated that the dissipation factor of thedielectric substrate 200 may be any value between, and including, any ofthe values noted above. It will be further appreciated that thedissipation factor of the dielectric substrate 200 may be within a rangebetween, and including, any of the values noted above.

According to yet other embodiments, the dielectric substrate 200 mayhave a particular dissipation factor (Df) as measured in the rangebetween 10 GHz, 80% RH. For example, the dielectric substrate 200 mayhave a dissipation factor of not greater than about 0.005, such as, notgreater than about 0.004 or not greater than about 0.003 or not greaterthan about 0.002 or not greater than about 0.0019 or not greater thanabout 0.0018 or not greater than about 0.0017 or not greater than about0.0016 or not greater than about 0.0015 or not greater than about0.0014. It will be appreciated that the dissipation factor of thedielectric substrate 200 may be any value between, and including, any ofthe values noted above. It will be further appreciated that thedissipation factor of the dielectric substrate 200 may be within a rangebetween, and including, any of the values noted above.

According to yet other embodiments, the dielectric substrate 200 mayhave a particular dissipation factor (Df) as measured in the rangebetween 28 GHz, 20% RH. For example, the dielectric substrate 200 mayhave a dissipation factor of not greater than about 0.005, such as, notgreater than about 0.004 or not greater than about 0.003 or not greaterthan about 0.002 or not greater than about 0.0019 or not greater thanabout 0.0018 or not greater than about 0.0017 or not greater than about0.0016 or not greater than about 0.0015 or not greater than about0.0014. It will be appreciated that the dissipation factor of thedielectric substrate 200 may be any value between, and including, any ofthe values noted above. It will be further appreciated that thedissipation factor of the dielectric substrate 200 may be within a rangebetween, and including, any of the values noted above.

According to yet other embodiments, the dielectric substrate 200 mayhave a particular dissipation factor (Df) as measured in the rangebetween 28 GHz, 80% RH. For example, the dielectric substrate 200 mayhave a dissipation factor of not greater than about 0.005, such as, notgreater than about 0.004 or not greater than about 0.003 or not greaterthan about 0.002 or not greater than about 0.0019 or not greater thanabout 0.0018 or not greater than about 0.0017 or not greater than about0.0016 or not greater than about 0.0015 or not greater than about0.0014. It will be appreciated that the dissipation factor of thedielectric substrate 200 may be any value between, and including, any ofthe values noted above. It will be further appreciated that thedissipation factor of the dielectric substrate 200 may be within a rangebetween, and including, any of the values noted above.

According to yet other embodiments, the dielectric substrate 200 mayhave a particular dissipation factor (Df) as measured in the rangebetween 39 GHz, 20% RH. For example, the dielectric substrate 200 mayhave a dissipation factor of not greater than about 0.005, such as, notgreater than about 0.004 or not greater than about 0.003 or not greaterthan about 0.002 or not greater than about 0.0019 or not greater thanabout 0.0018 or not greater than about 0.0017 or not greater than about0.0016 or not greater than about 0.0015 or not greater than about0.0014. It will be appreciated that the dissipation factor of thedielectric substrate 200 may be any value between, and including, any ofthe values noted above. It will be further appreciated that thedissipation factor of the dielectric substrate 200 may be within a rangebetween, and including, any of the values noted above.

According to yet other embodiments, the dielectric substrate 200 mayhave a particular dissipation factor (Df) as measured in the rangebetween 39 GHz, 80% RH. For example, the dielectric substrate 200 mayhave a dissipation factor of not greater than about 0.005, such as, notgreater than about 0.004 or not greater than about 0.003 or not greaterthan about 0.002 or not greater than about 0.0019 or not greater thanabout 0.0018 or not greater than about 0.0017 or not greater than about0.0016 or not greater than about 0.0015 or not greater than about0.0014. It will be appreciated that the dissipation factor of thedielectric substrate 200 may be any value between, and including, any ofthe values noted above. It will be further appreciated that thedissipation factor of the dielectric substrate 200 may be within a rangebetween, and including, any of the values noted above.

According to yet other embodiments, the dielectric substrate 200 mayhave a particular dissipation factor (Df) as measured in the rangebetween 76-81 GHz, 20% RH. For example, the dielectric substrate 200 mayhave a dissipation factor of not greater than about 0.005, such as, notgreater than about 0.004 or not greater than about 0.003 or not greaterthan about 0.002 or not greater than about 0.0019 or not greater thanabout 0.0018 or not greater than about 0.0017 or not greater than about0.0016 or not greater than about 0.0015 or not greater than about0.0014. It will be appreciated that the dissipation factor of thedielectric substrate 200 may be any value between, and including, any ofthe values noted above. It will be further appreciated that thedissipation factor of the dielectric substrate 200 may be within a rangebetween, and including, any of the values noted above.

According to yet other embodiments, the dielectric substrate 200 mayhave a particular dissipation factor (Df) as measured in the rangebetween 76-81 GHz, 80% RH. For example, the dielectric substrate 200 mayhave a dissipation factor of not greater than about 0.005, such as, notgreater than about 0.004 or not greater than about 0.003 or not greaterthan about 0.002 or not greater than about 0.0019 or not greater thanabout 0.0018 or not greater than about 0.0017 or not greater than about0.0016 or not greater than about 0.0015 or not greater than about0.0014. It will be appreciated that the dissipation factor of thedielectric substrate 200 may be any value between, and including, any ofthe values noted above. It will be further appreciated that thedissipation factor of the dielectric substrate 200 may be within a rangebetween, and including, any of the values noted above.

According to yet other embodiments, the dielectric substrate 200 mayhave a particular coefficient of thermal expansion as measured accordingto IPC-TM-650 2.4.24 Rev. C Glass Transition Temperature and Z-AxisThermal Expansion by TMA. For example, the dielectric substrate 200 mayhave a coefficient of thermal expansion of not greater than about 80ppm/° C.

According to other embodiments of a dielectric substrate formedaccording to forming method 100, FIG. 2b includes a diagram of adielectric substrate 201. As shown in FIG. 2b , the dielectric substrate201 may include the polyimide layer 202, the first filled polymer layer204 overlying the polyimide layer, and a second filled polymer layer 206underlying the polyimide layer. As shown in FIG. 2b , the second filledpolymer layer 206 may include a second resin matrix component 230 and asecond ceramic filler component 240.

According to particular embodiments, the second ceramic filler component240 may include a third filler material, which may have particularcharacteristics that may improve performance of the dielectric substrate201.

According to certain embodiments, the third filler material of thesecond ceramic filler component 240 may have a particular sizedistribution. For purposes of embodiments described herein, the particlesize distribution of a material, for example, the particle sizedistribution of a third filler material may be described using anycombination of particle size distribution D-values D₁₀, D₅₀ and D₉₀. TheD₁₀ value from a particle size distribution is defined as a particlesize value where 10% of the particles are smaller than the value and 90%of the particles are larger than the value. The D₅₀ value from aparticle size distribution is defined as a particle size value where 50%of the particles are smaller than the value and 50% of the particles arelarger than the value. The D₉₀ value from a particle size distributionis defined as a particle size value where 90% of the particles aresmaller than the value and 10% of the particles are larger than thevalue. For purposes of embodiments described herein, particle sizemeasurements for a particular material are made using laser diffractionspectroscopy.

According to certain embodiments, the third filler material of thesecond ceramic filler component 240 may have a particular sizedistribution D₁₀ value. For example, the D₁₀ of the third fillermaterial may be at least about 0.2 microns, such as, at least about 0.3microns or at least about 0.4 microns or at least about 0.5 microns orat least about 0.6 microns or at least about 0.7 microns or at leastabout 0.8 microns or at least about 0.9 microns or at least about 1.0microns or at least about 1.1 microns or even at least about 1.2microns. According to still other embodiments, the D₁₀ of the thirdfiller material may be not greater than about 1.6 microns, such as, notgreater than about 1.5 microns or even not greater than about 1.4microns. It will be appreciated that the D₁₀ of the third fillermaterial may be any value between, and including, any of the minimum andmaximum values noted above. It will be further appreciated that the D₁₀of the third filler material may be within a range between, andincluding, any of the minimum and maximum values noted above.

According to other embodiments, the third filler material of the secondceramic filler component 240 may have a particular size distribution D₅₀value. For example, the D₅₀ of the third filler material may be at leastabout 0.5 microns, such as, at least about 0.6 microns or at least about0.7 microns or at least about 0.8 microns or at least about 0.9 micronsor at least about 1.0 microns or at least about 1.1 microns or at leastabout 1.2 microns or at least about 1.3 microns or at least about 1.4microns or at least about 1.5 microns or at least about 1.6 microns orat least about 1.7 microns or at least about 1.8 microns or at leastabout 1.9 microns or at least about 2.0 microns or at least about 2.1microns or even at least about 2.2 microns. According to still otherembodiments, the D₅₀ of the third filler material may be not greaterthan about 2.7 microns, such as, not greater than about 2.6 microns ornot greater than about 2.5 microns or even not greater than about 2.4.It will be appreciated that the D₅₀ of the third filler material may beany value between, and including, any of the minimum and maximum valuesnoted above. It will be further appreciated that the D₅₀ of the thirdfiller material may be within a range between, and including, any of theminimum and maximum values noted above.

According to other embodiments, the third filler material of the secondceramic filler component 240 may have a particular size distribution D₉₀value. For example, the D₉₀ of the third filler material may be at leastabout 0.8 microns, such as, at least about 0.9 or at least about 1.0 orat least about 1.1 or at least about 1.2 or at least about 1.3 or atleast about 1.4 or at least about 1.5 or at least about 1.6 microns orat least about 1.7 microns or at least about 1.8 microns or at leastabout 1.9 microns or at least about 2.0 microns or at least about 2.1microns or at least about 2.2 microns or at least about 2.3 microns orat least about 2.4 microns or at least about 2.5 microns or at leastabout 2.6 microns or even at least about 2.7 microns. According to stillother embodiments, the D₉₀ of the third filler material may be notgreater than about 8.0 microns, such as, not greater than about 7.5microns or not greater than about 7.0 microns or not greater than about6.5 microns or not greater than about 6.0 microns or not greater thanabout 5.5 microns or not greater than about 5.4 microns or not greaterthan about 5.3 microns or not greater than about 5.2 or even not greaterthan about 5.1 microns. It will be appreciated that the D₉₀ of the thirdfiller material may be any value between, and including, any of theminimum and maximum values noted above. It will be further appreciatedthat the D₉₀ of the third filler material may be within a range between,and including, any of the minimum and maximum values noted above.

According to still other embodiments, the third filler material of thesecond ceramic filler component 240 may have a particular averageparticle size as measured according to laser diffraction spectroscopy.For example, the mean particle size of the third filler material may benot greater than about 10 microns, such as, not greater than about 9microns or not greater than about 8 microns or not greater than about 7microns or not greater than about 6 microns or not greater than about 5microns or not greater than about 4 microns or not greater than about 3microns or even not greater than about 2 microns. It will be appreciatedthat the mean particle size of the third filler material may be anyvalue between, and including, any of the values noted above. It will befurther appreciated that the mean particle size of the third fillermaterial may be within a range between, and including, any of the valuesnoted above.

According to still other embodiments, the third filler material of thesecond ceramic filler component 240 may be described as having aparticular particle size distribution span (PSDS), where the PSDS isequal to (D₉₀-D₁₀)/D₅₀, where D₉₀ is equal to a D₉₀ particle sizedistribution measurement of the third filler material, D₁₀ is equal to aD₁₀ particle size distribution measurement of the third filler material,and D₅₀ is equal to a D₅₀ particle size distribution measurement of thethird filler material. For example, the PSDS of the third fillermaterial may be not greater than about 5, such as, not greater thanabout 4.5 or not greater than about 4.0 or not greater than about 3.5 ornot greater than about 3.0 or even not greater than about 2.5. It willbe appreciated that the PSDS of the third filler material may be anyvalue between, and including, any of the values noted above. It will befurther appreciated that the PSDS of the third filler material may bewithin a range between, and including, any of the values noted above.

According to still other embodiments, the third filler material of thesecond ceramic filler component 240 may be described as having aparticular average surface area as measured using Brunauer-Emmett-Teller(BET) surface area analysis (Nitrogen Adsorption). For example, thethird filler material may have an average surface area of not greaterthan about 10 m²/g, such as, not greater than about 9.9 m²/g or notgreater than about 9.5 m²/g or not greater than about 9.0 m²/g or notgreater than about 8.5 m²/g or not greater than about 8.0 m²/g or notgreater than about 7.5 m²/g or not greater than about 7.0 m²/g or notgreater than about 6.5 m²/g or not greater than about 6.0 m²/g or notgreater than about 5.5 m²/g or not greater than about 5.0 m²/g or notgreater than about 4.5 m²/g or not greater than about 4.0 m²/g or evennot greater than about 3.5 m²/g. According to still other embodiments,the third filler material may have an average surface area of at leastabout 1.2 m²/g, such as, at least about 2.4 m²/g. It will be appreciatedthat the average surface area of the third filler material may be anyvalue between, and including, any of the minimum and maximum valuesnoted above. It will be further appreciated that the average surfacearea of the third filler material may be within a range between, andincluding, any of the minimum and maximum values noted above.

According to other embodiments, the third filler material of the secondceramic filler component 240 may include a particular material.According to particular embodiments, the third filler material mayinclude a silica-based compound. According to still other embodiments,the third filler material may consist of a silica-based compound.According to other embodiments, the third filler material may includesilica. According to still other embodiments, the third filler materialmay consist of silica.

According to yet other embodiments, the first filled polymer layer 204may include a particular content of the second ceramic filler component240. For example, the content of the second ceramic filler component 240may be at least about 30 vol. % for a total volume of the second ceramicfiller component 240, such as, at least about 31 vol. % or at leastabout 32 vol. % or at least about 33 vol. % or at least about 34 vol. %or at least about 35 vol. % or at least about 36 vol. % or at leastabout 37 vol. % or at least about 38 vol. % or at least about 39 vol. %or at least about 40 vol. % or at least about 41 vol. % or at leastabout 42 vol. % or at least about 43 vol. % or at least about 44 vol. %or at least about 45 vol. % or at least about 46 vol. % or at leastabout 47 vol. % or at least about 48 vol. % or at least about 49 vol. %or at least about 50 vol. % or at least about 51 vol. % or at leastabout 52 vol. % or at least about 53 vol. % or even at least about 54vol. %. According to still other embodiments, the content of the secondceramic filler component 240 may be not greater than about 57 vol. % fora total volume of the first filled polymer layer 204, such as, notgreater than about 56 vol. % or even not greater than about 55 vol. %.It will be appreciated that the content of the ceramic filler component220 may be any value between, and including, any of the minimum andmaximum values noted above. It will be further appreciated that thecontent of the ceramic filler component 220 may be within a rangebetween, and including, any of the minimum and maximum values notedabove.

According to still other embodiments, the second ceramic fillercomponent 240 may include a particular content of the third fillermaterial. For example, the content of the third filler material may beat least about 80 vol. % for a total volume of the second ceramic fillercomponent 240, such as, at least about 81 vol. % or at least about 82vol. % or at least about 83 vol. % or at least about 84 vol. % or atleast about 85 vol. % or at least about 86 vol. % or at least about 87vol. % or at least about 88 vol. % or at least about 89 vol. % or evenat least about 90 vol. %. According to still other embodiments, thecontent of the third filler material may be not greater than about 100vol. % for a total volume of the second ceramic filler component 240,such as, not greater than about 99 vol. % or not greater than about 98vol. % or not greater than about 97 vol. % or not greater than about 96vol. % or not greater than about 95 vol. % or not greater than about 94vol. % or not greater than about 93 vol. % or even not greater thanabout 92 vol. %. It will be appreciated that the content of the thirdfiller material may be any value between, and including, any of theminimum and maximum values noted above. It will be further appreciatedthat the content of the third filler material may be within a rangebetween, and including, any of the minimum and maximum values notedabove.

According to still other embodiments, the second ceramic fillercomponent 240 may include a fourth filler material.

According to yet other embodiments, the fourth filler material of thesecond ceramic filler component 240 may include a particular material.For example, the fourth filler material may include a high dielectricconstant ceramic material, such as, a ceramic material having adielectric constant of at least about 14. According to particularembodiments, the fourth filler material of the second ceramic fillercomponent 240 may include any high dielectric constant ceramic material,such as, TiO₂, SrTiO₃, ZrTi₂O₆, MgTiO₃, CaTiO₃, BaTiO₄ or anycombination thereof.

According to yet other embodiments, the fourth filler material of thesecond ceramic filler component 240 may include TiO₂. According to stillother embodiments, the fourth filler material may consist of TiO₂.

According to still other embodiments, the second ceramic fillercomponent 240 may include a particular content of the fourth fillermaterial. For example, the content of the fourth filler material may beat least about 1 vol. % for a total volume of the second ceramic fillercomponent 240, such as, at least about 2 vol. % or at least about 3 vol.% or at least about 4 vol. % or at least about 5 vol. % or at leastabout 6 vol. % or at least about 7 vol. % or at least about 8 vol. % orat least about 9 vol. % or at least about 10 vol. %. According to stillother embodiments, the content of the fourth filler material may be notgreater than about 20 vol. % for a total volume of the second ceramicfiller component 240, such as, not greater than about 19 vol. % or notgreater than about 18 vol. % or not greater than about 17 vol. % or notgreater than about 16 vol. % or not greater than about 15 vol. % or notgreater than about 14 vol. % or not greater than about 13 vol. % or notgreater than about 12 vol. %. It will be appreciated that the content ofthe fourth filler material may be any value between, and including, anyof the minimum and maximum values noted above. It will be furtherappreciated that the content of the fourth filler material may be withina range between, and including, any of the minimum and maximum valuesnoted above.

According to yet other embodiments, the second ceramic filler component240 may include a particular content of amorphous material. For example,the second ceramic filler component 240 may include at least about 97%amorphous material, such as, at least about 98% or even at least about99%. It will be appreciated that the content of amorphous material maybe any value between, and including, any of the values noted above. Itwill be further appreciated that the content of amorphous material maybe within a range between, and including, any of the values noted above.

According to other embodiments, the second resin matrix component 230may include a particular material. For example, the second resin matrixcomponent 230 may include a perfluoropolymer. According to still otherembodiments, the second resin matrix component 230 may consist of aperfluoropolymer.

According to yet other embodiments, the perfluoropolymer of the secondresin matrix component 230 may include a copolymer oftetrafluoroethylene (TFE); a copolymer of hexafluoropropylene (HFP); aterpolymer of tetrafluoroethylene (TFE); or any combination thereof.According to other embodiments, the perfluoropolymer of the second resinmatrix component 230 may consist of a copolymer of tetrafluoroethylene(TFE); a copolymer of hexafluoropropylene (HFP); a terpolymer oftetrafluoroethylene (TFE); or any combination thereof.

According to yet other embodiments, the perfluoropolymer of the secondresin matrix component 230 may include polytetrafluoroethylene (PTFE),perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene(FEP), or any combination thereof. According to still other embodiments,the perfluoropolymer of the second resin matrix component 230 mayconsist of polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin(PFA), fluorinated ethylene propylene (FEP), or any combination thereof.

According to yet other embodiments, the second filled polymer layer 206may include a particular content of the second resin matrix component230. For example, the content of the second resin matrix component 230may be at least about 45 vol. % for a total volume of the second filledpolymer layer 206, such as, at least about 46 vol. % or at least about47 vol. % or at least about 48 vol. % or at least about 49 vol. % or atleast about 50 vol. % or at least about 51 vol. % or at least about 52vol. % or at least about 53 vol. % or at least about 54 vol. % or evenat least about 55 vol. %. According to still other embodiments, thecontent of the second resin matrix component 230 is not greater thanabout 63 vol. % for a total volume of the second filled polymer layer206 or not greater than about 62 vol. % or not greater than about 61vol. % or not greater than about 60 vol. % or not greater than about 59vol. % or not greater than about 58 vol. % or even not greater thanabout 57 vol. %. It will be appreciated that the content of the secondresin matrix component 230 may be any value between, and including, anyof the minimum and maximum values noted above. It will be furtherappreciated that the content of the second resin matrix component 230may be within a range between, and including, any of the minimum andmaximum values noted above.

According to yet other embodiments, the second filled polymer layer 206may include a particular content of the perfluoropolymer. For example,the content of the perfluoropolymer may be at least about 45 vol. % fora total volume of the second filled polymer layer 206, such as, at leastabout 46 vol. % or at least about 47 vol. % or at least about 48 vol. %or at least about 49 vol. % or at least about 50 vol. % or at leastabout 51 vol. % or at least about 52 vol. % or at least about 53 vol. %or at least about 54 vol. % or even at least about 55 vol. %. Accordingto still other embodiments, the content of the perfluoropolymer may benot greater than about 63 vol. % for a total volume of the second filledpolymer layer 206, such as, not greater than about 62 vol. % or notgreater than about 61 vol. % or not greater than about 60 vol. % or notgreater than about 59 vol. % or not greater than about 58 vol. % or evennot greater than about 57 vol. %. It will be appreciated that thecontent of the perfluoropolymer may be any value between, and including,any of the minimum and maximum values noted above. It will be furtherappreciated that the content of the perfluoropolymer may be within arange between, and including, any of the minimum and maximum valuesnoted above.

According to still other embodiments, the dielectric substrate 201 mayinclude a particular porosity as measured using x-ray diffraction. Forexample, the porosity of the substrate 200 may be not greater than about10 vol. %, such as, not greater than about 9 vol. % or not greater thanabout 8 vol. % or not greater than about 7 vol. % or not greater thanabout 6 vol. % or even not greater than about 5 vol. %. It will beappreciated that the porosity of the dielectric substrate 201 may be anyvalue between, and including, any of the values noted above. It will befurther appreciated that the porosity of the dielectric substrate 201may be within a range between, and including, any of the values notedabove.

According to yet other embodiments, the dielectric substrate 201 mayhave a particular average thickness. For example, the average thicknessof the dielectric substrate 201 may be at least about 10 microns, suchas, at least about 15 microns or at least about 20 microns or at leastabout 25 microns or at least about 30 microns or at least about 35microns or at least about 40 microns or at least about 45 microns or atleast about 50 microns or at least about 55 microns or at least about 60microns or at least about 65 microns or at least about 70 microns oreven at least about 75 microns. According to yet other embodiments, theaverage thickness of the dielectric substrate 201 may be not greaterthan about 2000 microns, such as, not greater than about 1800 microns ornot greater than about 1600 microns or not greater than about 1400microns or not greater than about 1200 microns or not greater than about1000 microns or not greater than about 800 microns or not greater thanabout 600 microns or not greater than about 400 microns or not greaterthan about 200 microns or not greater than about 190 microns or notgreater than about 180 microns or not greater than about 170 microns ornot greater than about 160 microns or not greater than about 150 micronsor not greater than about 140 microns or not greater than about 120microns or even not greater than about 100 microns. It will beappreciated that the average thickness of the dielectric substrate 201may be any value between, and including, any of the minimum and maximumvalues noted above. It will be further appreciated that the averagethickness of the dielectric substrate 201 may be within a range between,and including, any of the minimum and maximum values noted above.

According to yet other embodiments, the dielectric substrate 201 mayhave a particular dissipation factor (Df) as measured in the rangebetween 5 GHz, 20% RH. For example, the dielectric substrate 201 mayhave a dissipation factor of not greater than about 0.005, such as, notgreater than about 0.004 or not greater than about 0.003 or not greaterthan about 0.002 or not greater than about 0.0019 or not greater thanabout 0.0018 or not greater than about 0.0017 or not greater than about0.0016 or not greater than about 0.0015 or not greater than about0.0014. It will be appreciated that the dissipation factor of thedielectric substrate 201 may be any value between, and including, any ofthe values noted above. It will be further appreciated that thedissipation factor of the dielectric substrate 201 may be within a rangebetween, and including, any of the values noted above.

According to yet other embodiments, the dielectric substrate 201 mayhave a particular dissipation factor (Df) as measured in the rangebetween 5 GHz, 80% RH. For example, the dielectric substrate 201 mayhave a dissipation factor of not greater than about 0.005, such as, notgreater than about 0.004 or not greater than about 0.003 or not greaterthan about 0.002 or not greater than about 0.0019 or not greater thanabout 0.0018 or not greater than about 0.0017 or not greater than about0.0016 or not greater than about 0.0015 or not greater than about0.0014. It will be appreciated that the dissipation factor of thedielectric substrate 201 may be any value between, and including, any ofthe values noted above. It will be further appreciated that thedissipation factor of the dielectric substrate 201 may be within a rangebetween, and including, any of the values noted above.

According to yet other embodiments, the dielectric substrate 201 mayhave a particular dissipation factor (Df) as measured in the rangebetween 10 GHz, 20% RH. For example, the dielectric substrate 201 mayhave a dissipation factor of not greater than about 0.005, such as, notgreater than about 0.004 or not greater than about 0.003 or not greaterthan about 0.002 or not greater than about 0.0019 or not greater thanabout 0.0018 or not greater than about 0.0017 or not greater than about0.0016 or not greater than about 0.0015 or not greater than about0.0014. It will be appreciated that the dissipation factor of thedielectric substrate 201 may be any value between, and including, any ofthe values noted above. It will be further appreciated that thedissipation factor of the dielectric substrate 201 may be within a rangebetween, and including, any of the values noted above.

According to yet other embodiments, the dielectric substrate 201 mayhave a particular dissipation factor (Df) as measured in the rangebetween 10 GHz, 80% RH. For example, the dielectric substrate 201 mayhave a dissipation factor of not greater than about 0.005, such as, notgreater than about 0.004 or not greater than about 0.003 or not greaterthan about 0.002 or not greater than about 0.0019 or not greater thanabout 0.0018 or not greater than about 0.0017 or not greater than about0.0016 or not greater than about 0.0015 or not greater than about0.0014. It will be appreciated that the dissipation factor of thedielectric substrate 201 may be any value between, and including, any ofthe values noted above. It will be further appreciated that thedissipation factor of the dielectric substrate 201 may be within a rangebetween, and including, any of the values noted above.

According to yet other embodiments, the dielectric substrate 201 mayhave a particular dissipation factor (Df) as measured in the rangebetween 28 GHz, 20% RH. For example, the dielectric substrate 201 mayhave a dissipation factor of not greater than about 0.005, such as, notgreater than about 0.004 or not greater than about 0.003 or not greaterthan about 0.002 or not greater than about 0.0019 or not greater thanabout 0.0018 or not greater than about 0.0017 or not greater than about0.0016 or not greater than about 0.0015 or not greater than about0.0014. It will be appreciated that the dissipation factor of thedielectric substrate 201 may be any value between, and including, any ofthe values noted above. It will be further appreciated that thedissipation factor of the dielectric substrate 201 may be within a rangebetween, and including, any of the values noted above.

According to yet other embodiments, the dielectric substrate 201 mayhave a particular dissipation factor (Df) as measured in the rangebetween 28 GHz, 80% RH. For example, the dielectric substrate 201 mayhave a dissipation factor of not greater than about 0.005, such as, notgreater than about 0.004 or not greater than about 0.003 or not greaterthan about 0.002 or not greater than about 0.0019 or not greater thanabout 0.0018 or not greater than about 0.0017 or not greater than about0.0016 or not greater than about 0.0015 or not greater than about0.0014. It will be appreciated that the dissipation factor of thedielectric substrate 201 may be any value between, and including, any ofthe values noted above. It will be further appreciated that thedissipation factor of the dielectric substrate 201 may be within a rangebetween, and including, any of the values noted above.

According to yet other embodiments, the dielectric substrate 201 mayhave a particular dissipation factor (Df) as measured in the rangebetween 39 GHz, 20% RH. For example, the dielectric substrate 201 mayhave a dissipation factor of not greater than about 0.005, such as, notgreater than about 0.004 or not greater than about 0.003 or not greaterthan about 0.002 or not greater than about 0.0019 or not greater thanabout 0.0018 or not greater than about 0.0017 or not greater than about0.0016 or not greater than about 0.0015 or not greater than about0.0014. It will be appreciated that the dissipation factor of thedielectric substrate 201 may be any value between, and including, any ofthe values noted above. It will be further appreciated that thedissipation factor of the dielectric substrate 201 may be within a rangebetween, and including, any of the values noted above.

According to yet other embodiments, the dielectric substrate 201 mayhave a particular dissipation factor (Df) as measured in the rangebetween 39 GHz, 80% RH. For example, the dielectric substrate 201 mayhave a dissipation factor of not greater than about 0.005, such as, notgreater than about 0.004 or not greater than about 0.003 or not greaterthan about 0.002 or not greater than about 0.0019 or not greater thanabout 0.0018 or not greater than about 0.0017 or not greater than about0.0016 or not greater than about 0.0015 or not greater than about0.0014. It will be appreciated that the dissipation factor of thedielectric substrate 201 may be any value between, and including, any ofthe values noted above. It will be further appreciated that thedissipation factor of the dielectric substrate 201 may be within a rangebetween, and including, any of the values noted above.

According to yet other embodiments, the dielectric substrate 201 mayhave a particular dissipation factor (Df) as measured in the rangebetween 76-81 GHz, 20% RH. For example, the dielectric substrate 201 mayhave a dissipation factor of not greater than about 0.005, such as, notgreater than about 0.004 or not greater than about 0.003 or not greaterthan about 0.002 or not greater than about 0.0019 or not greater thanabout 0.0018 or not greater than about 0.0017 or not greater than about0.0016 or not greater than about 0.0015 or not greater than about0.0014. It will be appreciated that the dissipation factor of thedielectric substrate 201 may be any value between, and including, any ofthe values noted above. It will be further appreciated that thedissipation factor of the dielectric substrate 201 may be within a rangebetween, and including, any of the values noted above.

According to yet other embodiments, the dielectric substrate 201 mayhave a particular dissipation factor (Df) as measured in the rangebetween 76-81 GHz, 80% RH. For example, the dielectric substrate 201 mayhave a dissipation factor of not greater than about 0.005, such as, notgreater than about 0.004 or not greater than about 0.003 or not greaterthan about 0.002 or not greater than about 0.0019 or not greater thanabout 0.0018 or not greater than about 0.0017 or not greater than about0.0016 or not greater than about 0.0015 or not greater than about0.0014. It will be appreciated that the dissipation factor of thedielectric substrate 201 may be any value between, and including, any ofthe values noted above. It will be further appreciated that thedissipation factor of the dielectric substrate 201 may be within a rangebetween, and including, any of the values noted above.

According to yet other embodiments, the dielectric substrate 201 mayhave a particular coefficient of thermal expansion as measured accordingto IPC-TM-650 2.4.24 Rev. C Glass Transition Temperature and Z-AxisThermal Expansion by TMA. For example, the dielectric substrate 201 mayhave a coefficient of thermal expansion of not greater than about 80ppm/° C.

It will be appreciated that the filled polymer layers described inreference to embodiments of dielectric substrates disclosed herein maybe directly in contact with the polyimide layer or there may be anadditional layer in between the filled polymer layers and the polyimidelayers. For example, a fluoropolymer layer (filled or unfilled) may beplaced between the polyimide layer and the filled polymer layers of thedielectric substrate.

Turning now to embodiments of copper-clad laminates that may includedielectric substrates described herein. Such additional embodimentsdescribed herein are generally directed to a copper-clad laminate thatmay include a copper foil layer and a dielectric substrate overlying thecopper foil layer. According to certain embodiments, the dielectricsubstrate may include a polyimide layer and a first filled polymer layeroverlying the polyimide layer, where the first filled polymer layer mayinclude a first resin matrix component, and a first ceramic fillercomponent.

Referring next to a method of forming a copper-clad laminate, FIG. 3includes a diagram showing a forming method 300 for forming acopper-clad laminate according to embodiments described herein.According to particular embodiments, the forming method 300 may includea first step 310 of providing a copper foil layer, a second step 320 offorming a dielectric substrate overlying the copper foil layer.According to particular embodiments, forming the dielectric substratemay include combining a first resin matrix precursor component and afirst ceramic filler precursor component to form a first formingmixture, and forming the first forming mixture into a first filledpolymer layer overlying the polyimide layer to form the dielectricsubstrate.

According to particular embodiments, the first ceramic filler precursorcomponent may include a first filler precursor material, which may haveparticular characteristics that may improve performance of thecopper-clad laminate formed by the forming method 300.

According to certain embodiments, the first filler precursor materialmay have a particular size distribution. For purposes of embodimentsdescribed herein, the particle size distribution of a material, forexample, the particle size distribution of a first filler precursormaterial may be described using any combination of particle sizedistribution D-values D₁₀, D₅₀ and D₉₀. The D₁₀ value from a particlesize distribution is defined as a particle size value where 10% of theparticles are smaller than the value and 90% of the particles are largerthan the value. The D₅₀ value from a particle size distribution isdefined as a particle size value where 50% of the particles are smallerthan the value and 50% of the particles are larger than the value. TheD₉₀ value from a particle size distribution is defined as a particlesize value where 90% of the particles are smaller than the value and 10%of the particles are larger than the value. For purposes of embodimentsdescribed herein, particle size measurements for a particular materialare made using laser diffraction spectroscopy.

According to certain embodiments, the first filler precursor materialmay have a particular size distribution D₁₀ value. For example, the D₁₀of the first filler precursor material may be at least about 0.2microns, such as, at least about 0.3 microns or at least about 0.4microns or at least about 0.5 microns or at least about 0.6 microns orat least about 0.7 microns or at least about 0.8 microns or at leastabout 0.9 microns or at least about 1.0 microns or at least about 1.1microns or even at least about 1.2 microns. According to still otherembodiments, the D₁₀ of the first filler material may be not greaterthan about 1.6 microns, such as, not greater than about 1.5 microns oreven not greater than about 1.4 microns. It will be appreciated that theD₁₀ of the first filler precursor material may be any value between, andincluding, any of the minimum and maximum values noted above. It will befurther appreciated that the D₁₀ of the first filler precursor materialmay be within a range between, and including, any of the minimum andmaximum values noted above.

According to other embodiments, the first filler precursor material mayhave a particular size distribution D₅₀ value. For example, the D₅₀ ofthe first filler precursor material may be at least about 0.5 microns,such as, at least about 0.6 microns or at least about 0.7 microns or atleast about 0.8 microns or at least about 0.9 microns or at least about1.0 microns or at least about 1.1 microns or at least about 1.2 micronsor at least about 1.3 microns or at least about 1.4 microns or at leastabout 1.5 microns or at least about 1.6 microns or at least about 1.7microns or at least about 1.8 microns or at least about 1.9 microns orat least about 2.0 microns or at least about 2.1 microns or even atleast about 2.2 microns. According to still other embodiments, the D₅₀of the first filler material may be not greater than about 2.7 microns,such as, not greater than about 2.6 microns or not greater than about2.5 microns or even not greater than about 2.4. It will be appreciatedthat the D₅₀ of the first filler precursor material may be any valuebetween, and including, any of the minimum and maximum values notedabove. It will be further appreciated that the D₅₀ of the first fillerprecursor material may be within a range between, and including, any ofthe minimum and maximum values noted above.

According to other embodiments, the first filler precursor material mayhave a particular size distribution D₉₀ value. For example, the D₉₀ ofthe first filler precursor material may be at least about 0.8 microns,such as, at least about 0.9 or at least about 1.0 or at least about 1.1or at least about 1.2 or at least about 1.3 or at least about 1.4 or atleast about 1.5 or at least about 1.6 microns or at least about 1.7microns or at least about 1.8 microns or at least about 1.9 microns orat least about 2.0 microns or at least about 2.1 microns or at leastabout 2.2 microns or at least about 2.3 microns or at least about 2.4microns or at least about 2.5 microns or at least about 2.6 microns oreven at least about 2.7 microns. According to still other embodiments,the D₉₀ of the first filler material may be not greater than about 8.0microns, such as, not greater than about 7.5 microns or not greater thanabout 7.0 microns or not greater than about 6.5 microns or not greaterthan about 6.0 microns or not greater than about 5.5 microns or notgreater than about 5.4 microns or not greater than about 5.3 microns ornot greater than about 5.2 or even not greater than about 5.1 microns.It will be appreciated that the D₉₀ of the first filler precursormaterial may be any value between, and including, any of the minimum andmaximum values noted above. It will be further appreciated that the D₉₀of the first filler precursor material may be within a range between,and including, any of the minimum and maximum values noted above.

According to still other embodiments, the first filler precursormaterial may have a particular average particle size as measured usinglaser diffraction spectroscopy. For example, the mean particle size ofthe first filler precursor material may be not greater than about 10microns, such as, not greater than about 9 microns or not greater thanabout 8 microns or not greater than about 7 microns or not greater thanabout 6 microns or not greater than about 5 microns or not greater thanabout 4 microns or not greater than about 3 microns or even not greaterthan about 2 microns. It will be appreciated that the mean particle sizeof the first filler precursor material may be any value between, andincluding, any of the values noted above. It will be further appreciatedthat the mean particle size of the first filler precursor material maybe within a range between, and including, any of the values noted above.

According to still other embodiments, the first filler precursormaterial may be described as having a particular particle sizedistribution span (PSDS), where the PSDS of the first filler precursormaterial is equal to (D₉₀−D₁₀)/D₅₀, where D₉₀ is equal to a D₉₀ particlesize distribution measurement of the first filler precursor material,D₁₀ is equal to a D₁₀ particle size distribution measurement of thefirst filler precursor material, and D₅₀ is equal to a D₅₀ particle sizedistribution measurement of the first filler precursor material. Forexample, the PSDS of the first filler precursor material may be notgreater than about 5, such as, not greater than about 4.5 or not greaterthan about 4.0 or not greater than about 3.5 or not greater than about3.0 or even not greater than about 2.5. It will be appreciated that thePSDS of the first filler precursor material may be any value between,and including, any of the values noted above. It will be furtherappreciated that the PSDS of the first filler precursor material may bewithin a range between, and including, any of the values noted above.

According to still other embodiments, the first filler precursormaterial may be described as having a particular average surface area asmeasured using Brunauer-Emmett-Teller (BET) surface area analysis(Nitrogen Adsorption). For example, the first filler precursor materialmay have an average surface area of not greater than about 10 m²/g, suchas, not greater than about 9.9 m²/g or not greater than about 9.5 m²/gor not greater than about 9.0 m²/g or not greater than about 8.5 m²/g ornot greater than about 8.0 m²/g or not greater than about 7.5 m²/g ornot greater than about 7.0 m²/g or not greater than about 6.5 m²/g ornot greater than about 6.0 m²/g or not greater than about 5.5 m²/g ornot greater than about 5.0 m²/g or not greater than about 4.5 m²/g ornot greater than about 4.0 m²/g or even not greater than about 3.5 m²/g.According to still other embodiments, the first filler precursormaterial may have an average surface area of at least about 1.2 m²/g,such as, at least about 2.4 m²/g. It will be appreciated that theaverage surface area of the first filler precursor material may be anyvalue between, and including, any of the minimum and maximum valuesnoted above. It will be further appreciated that the average surfacearea of the first filler precursor material may be within a rangebetween, and including, any of the minimum and maximum values notedabove.

According to other embodiments, the first filler precursor material mayinclude a particular material. According to particular embodiments, thefirst filler precursor material may include a silica-based compound.According to still other embodiments, the first filler precursormaterial may consist of a silica-based compound. According to otherembodiments, the first filler precursor material may include silica.According to still other embodiments, the first filler precursormaterial may consist of silica.

According to yet other embodiments, the first forming mixture mayinclude a particular content of the first ceramic filler precursorcomponent. For example, the content of the first ceramic fillerprecursor component may be at least about 30 vol. % for a total volumeof the first forming mixture, such as, at least about 31 vol. % or atleast about 32 vol. % or at least about 33 vol. % or at least about 34vol. % or at least about 35 vol. % or at least about 36 vol. % or atleast about 37 vol. % or at least about 38 vol. % or at least about 39vol. % or at least about 40 vol. % or at least about 41 vol. % or atleast about 42 vol. % or at least about 43 vol. % or at least about 44vol. % or at least about 45 vol. % or 46 vol. % or at least about 47vol. % or at least about 48 vol. % or at least about 49 vol. % or atleast about 50 vol. % or at least about 51 vol. % or at least about 52vol. % or at least about 53 vol. % or even at least about 54 vol. %.According to still other embodiments, the content of the first ceramicfiller precursor component may be not greater than about 57 vol. % for atotal volume of the first forming mixture, such as, not greater thanabout 56 vol. % or even not greater than about 55 vol. %. It will beappreciated that the content of the first ceramic filler precursorcomponent may be any value between, and including, any of the minimumand maximum values noted above. It will be further appreciated that thecontent of the first ceramic filler precursor component may be within arange between, and including, any of the minimum and maximum valuesnoted above.

According to still other embodiments, the first ceramic filler precursorcomponent may include a particular content of the first filler precursormaterial. For example, the content of the first filler precursormaterial may be at least about 80 vol. % for a total volume of the firstceramic filler precursor component, such as, at least about 81 vol. % orat least about 82 vol. % or at least about 83 vol. % or at least about84 vol. % or at least about 85 vol. % or at least about 86 vol. % or atleast about 87 vol. % or at least about 88 vol. % or at least about 89vol. % or even at least about 90 vol. %. According to still otherembodiments, the content of the first filler precursor material may benot greater than about 100 vol. % for a total volume of the firstceramic filler precursor component, such as, not greater than about 99vol. % or not greater than about 98 vol. % or not greater than about 97vol. % or not greater than about 96 vol. % or not greater than about 95vol. % or not greater than about 94 vol. % or not greater than about 93vol. % or even not greater than about 92 vol. %. It will be appreciatedthat the content of the first filler precursor material may be any valuebetween, and including, any of the minimum and maximum values notedabove. It will be further appreciated that the content of the firstfiller precursor material may be within a range between, and including,any of the minimum and maximum values noted above.

According to still other embodiments, the first ceramic filler precursorcomponent may include a second filler precursor material.

According to yet other embodiments, the second filler precursor materialmay include a particular material. For example, the second fillerprecursor material may include a high dielectric constant ceramicmaterial, such as, a ceramic material having a dielectric constant of atleast about 14. According to particular embodiments, the second fillerprecursor material may include any high dielectric constant ceramicmaterial, such as, TiO₂, SrTiO₃, ZrTi₂O₆, MgTiO₃, CaTiO₃, BaTiO₄ or anycombination thereof.

According to yet other embodiments, the second filler precursor materialmay include TiO₂. According to still other embodiments, the secondfiller precursor material may consist of TiO₂.

According to still other embodiments, the first ceramic filler precursorcomponent may include a particular content of the second fillerprecursor material. For example, the content of the second fillerprecursor material may be at least about 1 vol. % for a total volume ofthe first ceramic filler precursor component, such as, at least about 2vol. % or at least about 3 vol. % or at least about 4 vol. % or at leastabout 5 vol. % or at least about 6 vol. % or at least about 7 vol. % orat least about 8 vol. % or at least about 9 vol. % or at least about 10vol. %. According to still other embodiments, the content of the secondfiller precursor material may be not greater than about 20 vol. % for atotal volume of the first ceramic filler precursor component, such as,not greater than about 19 vol. % or not greater than about 18 vol. % ornot greater than about 17 vol. % or not greater than about 16 vol. % ornot greater than about 15 vol. % or not greater than about 14 vol. % ornot greater than about 13 vol. % or not greater than about 12 vol. %. Itwill be appreciated that the content of the second filler precursormaterial may be any value between, and including, any of the minimum andmaximum values noted above. It will be further appreciated that thecontent of the second filler precursor material may be within a rangebetween, and including, any of the minimum and maximum values notedabove.

According to yet other embodiments, the first ceramic filler precursorcomponent may include a particular content of amorphous material. Forexample, the first ceramic filler precursor component may include atleast about 97% amorphous material, such as, at least about 98% or evenat least about 99%. It will be appreciated that the content of amorphousmaterial may be any value between, and including, any of the valuesnoted above. It will be further appreciated that the content ofamorphous material may be within a range between, and including, any ofthe values noted above.

According to other embodiments, the first resin matrix precursorcomponent may include a particular material. For example, the firstresin matrix precursor component may include a perfluoropolymer.According to still other embodiments, the first resin matrix precursorcomponent may consist of a perfluoropolymer.

According to yet other embodiments, the perfluoropolymer of the firstresin precursor matrix component may include a copolymer oftetrafluoroethylene (TFE); a copolymer of hexafluoropropylene (HFP); aterpolymer of tetrafluoroethylene (TFE); or any combination thereof.According to other embodiments, the perfluoropolymer of the first resinmatrix precursor component may consist of a copolymer oftetrafluoroethylene (TFE); a copolymer of hexafluoropropylene (HFP); aterpolymer of tetrafluoroethylene (TFE); or any combination thereof.

According to yet other embodiments, the perfluoropolymer of the firstresin matrix precursor component may include polytetrafluoroethylene(PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylenepropylene (FEP), or any combination thereof. According to still otherembodiments, the perfluoropolymer of the first resin matrix precursorcomponent may consist of polytetrafluoroethylene (PTFE), perfluoroalkoxypolymer resin (PFA), fluorinated ethylene propylene (FEP), or anycombination thereof.

According to yet other embodiments, the first forming mixture mayinclude a particular content of the first resin matrix precursorcomponent. For example, the content of the first resin matrix precursorcomponent may be at least about 45 vol. % for a total volume of thefirst forming mixture, such as, at least about 46 vol. % or at leastabout 47 vol. % or at least about 48 vol. % or at least about 49 vol. %or at least about 50 vol. % or at least about 51 vol. % or at leastabout 52 vol. % or at least about 53 vol. % or at least about 54 vol. %or even at least about 55 vol. %. According to still other embodiments,the content of the first resin matrix precursor component is not greaterthan about 63 vol. % for a total volume of the first forming mixture ornot greater than about 62 vol. % or not greater than about 61 vol. % ornot greater than about 60 vol. % or not greater than about 59 vol. % ornot greater than about 58 vol. % or even not greater than about 57 vol.%. It will be appreciated that the content of the first resin matrixprecursor component may be any value between, and including, any of theminimum and maximum values noted above. It will be further appreciatedthat the content of the first resin matrix precursor component may bewithin a range between, and including, any of the minimum and maximumvalues noted above.

According to yet other embodiments, the first forming mixture mayinclude a particular content of the perfluoropolymer. For example, thecontent of the perfluoropolymer may be at least about 45 vol. % for atotal volume of the first forming mixture, such as, at least about 46vol. % or at least about 47 vol. % or at least about 48 vol. % or atleast about 49 vol. % or at least about 50 vol. % or at least about 51vol. % or at least about 52 vol. % or at least about 53 vol. % or atleast about 54 vol. % or even at least about 55 vol. %. According tostill other embodiments, the content of the perfluoropolymer may be notgreater than about 63 vol. % for a total volume of the first formingmixture, such as, not greater than about 62 vol. % or not greater thanabout 61 vol. % or not greater than about 60 vol. % or not greater thanabout 59 vol. % or not greater than about 58 vol. % or even not greaterthan about 57 vol. %. It will be appreciated that the content of theperfluoropolymer may be any value between, and including, any of theminimum and maximum values noted above. It will be further appreciatedthat the content of the perfluoropolymer may be within a range between,and including, any of the minimum and maximum values noted above.

According to yet other embodiment, the forming the dielectric substratemay further include combining a second resin matrix precursor componentand a second ceramic filler precursor component to for a second formingmixture, and forming the second forming mixture into a second filledpolymer layer underlying the polyimide layer.

According to particular embodiments, the second ceramic filler precursorcomponent may include a third filler precursor material, which may haveparticular characteristics that may improve performance of thecopper-clad laminate formed by the forming method 300.

According to certain embodiments, the third filler precursor materialmay have a particular size distribution. For purposes of embodimentsdescribed herein, the particle size distribution of a material, forexample, the particle size distribution of a third filler precursormaterial may be described using any combination of particle sizedistribution D-values D₁₀, D₅₀ and D₉₀. The D₁₀ value from a particlesize distribution is defined as a particle size value where 10% of theparticles are smaller than the value and 90% of the particles are largerthan the value. The D₅₀ value from a particle size distribution isdefined as a particle size value where 50% of the particles are smallerthan the value and 50% of the particles are larger than the value. TheD₉₀ value from a particle size distribution is defined as a particlesize value where 90% of the particles are smaller than the value and 10%of the particles are larger than the value. For purposes of embodimentsdescribed herein, particle size measurements for a particular materialare made using laser diffraction spectroscopy.

According to certain embodiments, the third filler precursor materialmay have a particular size distribution D₁₀ value. For example, the D₁₀of the third filler precursor material may be at least about 0.2microns, such as, at least about 0.3 microns or at least about 0.4microns or at least about 0.5 microns or at least about 0.6 microns orat least about 0.7 microns or at least about 0.8 microns or at leastabout 0.9 microns or at least about 1.0 microns or at least about 1.1microns or even at least about 1.2 microns. According to still otherembodiments, the D₁₀ of the third filler material may be not greaterthan about 1.6 microns, such as, not greater than about 1.5 microns oreven not greater than about 1.4 microns. It will be appreciated that theD₁₀ of the third filler precursor material may be any value between, andincluding, any of the minimum and maximum values noted above. It will befurther appreciated that the D₁₀ of the third filler precursor materialmay be within a range between, and including, any of the minimum andmaximum values noted above.

According to other embodiments, the third filler precursor material mayhave a particular size distribution D₅₀ value. For example, the D₅₀ ofthe third filler precursor material may be at least about 0.5 microns,such as, at least about 0.6 microns or at least about 0.7 microns or atleast about 0.8 microns or at least about 0.9 microns or at least about1.0 microns or at least about 1.1 microns or at least about 1.2 micronsor at least about 1.3 microns or at least about 1.4 microns or at leastabout 1.5 microns or at least about 1.6 microns or at least about 1.7microns or at least about 1.8 microns or at least about 1.9 microns orat least about 2.0 microns or at least about 2.1 microns or even atleast about 2.2 microns. According to still other embodiments, the D₅₀of the third filler material may be not greater than about 2.7 microns,such as, not greater than about 2.6 microns or not greater than about2.5 microns or even not greater than about 2.4. It will be appreciatedthat the D₅₀ of the third filler precursor material may be any valuebetween, and including, any of the minimum and maximum values notedabove. It will be further appreciated that the D₅₀ of the third fillerprecursor material may be within a range between, and including, any ofthe minimum and maximum values noted above.

According to other embodiments, the third filler precursor material mayhave a particular size distribution D₉₀ value. For example, the D₉₀ ofthe third filler precursor material may be at least about 0.8 microns,such as, at least about 0.9 or at least about 1.0 or at least about 1.1or at least about 1.2 or at least about 1.3 or at least about 1.4 or atleast about 1.5 or at least about 1.6 microns or at least about 1.7microns or at least about 1.8 microns or at least about 1.9 microns orat least about 2.0 microns or at least about 2.1 microns or at leastabout 2.2 microns or at least about 2.3 microns or at least about 2.4microns or at least about 2.5 microns or at least about 2.6 microns oreven at least about 2.7 microns. According to still other embodiments,the D₉₀ of the third filler material may be not greater than about 8.0microns, such as, not greater than about 7.5 microns or not greater thanabout 7.0 microns or not greater than about 6.5 microns or not greaterthan about 6.0 microns or not greater than about 5.5 microns or notgreater than about 5.4 microns or not greater than about 5.3 microns ornot greater than about 5.2 or even not greater than about 5.1 microns.It will be appreciated that the D₉₀ of the third filler precursormaterial may be any value between, and including, any of the minimum andmaximum values noted above. It will be further appreciated that the D₉₀of the third filler precursor material may be within a range between,and including, any of the minimum and maximum values noted above.

According to still other embodiments, the third filler precursormaterial may have a particular average particle size as measured usinglaser diffraction spectroscopy. For example, the mean particle size ofthe third filler precursor material may be not greater than about 10microns, such as, not greater than about 9 microns or not greater thanabout 8 microns or not greater than about 7 microns or not greater thanabout 6 microns or not greater than about 5 microns or not greater thanabout 4 microns or not greater than about 3 microns or even not greaterthan about 2 microns. It will be appreciated that the mean particle sizeof the third filler precursor material may be any value between, andincluding, any of the values noted above. It will be further appreciatedthat the mean particle size of the third filler precursor material maybe within a range between, and including, any of the values noted above.

According to still other embodiments, the third filler precursormaterial may be described as having a particular particle sizedistribution span (PSDS), where the PSDS of the third filler precursormaterial is equal to (D₉₀−D₁₀)/D₅₀, where D₉₀ is equal to a D₉₀ particlesize distribution measurement of the third filler precursor material,D₁₀ is equal to a D₁₀ particle size distribution measurement of thethird filler precursor material, and D₅₀ is equal to a D₅₀ particle sizedistribution measurement of the third filler precursor material. Forexample, the PSDS of the third filler precursor material may be notgreater than about 5, such as, not greater than about 4.5 or not greaterthan about 4.0 or not greater than about 3.5 or not greater than about3.0 or even not greater than about 2.5. It will be appreciated that thePSDS of the third filler precursor material may be any value between,and including, any of the values noted above. It will be furtherappreciated that the PSDS of the third filler precursor material may bewithin a range between, and including, any of the values noted above.

According to still other embodiments, the third filler precursormaterial may be described as having a particular average surface area asmeasured using Brunauer-Emmett-Teller (BET) surface area analysis(Nitrogen Adsorption). For example, the third filler precursor materialmay have an average surface area of not greater than about 10 m²/g, suchas, not greater than about 9.9 m²/g or not greater than about 9.5 m²/gor not greater than about 9.0 m²/g or not greater than about 8.5 m²/g ornot greater than about 8.0 m²/g or not greater than about 7.5 m²/g ornot greater than about 7.0 m²/g or not greater than about 6.5 m²/g ornot greater than about 6.0 m²/g or not greater than about 5.5 m²/g ornot greater than about 5.0 m²/g or not greater than about 4.5 m²/g ornot greater than about 4.0 m²/g or even not greater than about 3.5 m²/g.According to still other embodiments, the third filler precursormaterial may have an average surface area of at least about 1.2 m²/g,such as, at least about 2.4 m²/g. It will be appreciated that theaverage surface area of the third filler precursor material may be anyvalue between, and including, any of the minimum and maximum valuesnoted above. It will be further appreciated that the average surfacearea of the third filler precursor material may be within a rangebetween, and including, any of the minimum and maximum values notedabove.

According to other embodiments, the third filler precursor material mayinclude a particular material. According to particular embodiments, thethird filler precursor material may include a silica-based compound.According to still other embodiments, the third filler precursormaterial may consist of a silica-based compound. According to otherembodiments, the third filler precursor material may include silica.According to still other embodiments, the third filler precursormaterial may consist of silica.

According to yet other embodiments, the second forming mixture mayinclude a particular content of the second ceramic filler precursorcomponent. For example, the content of the second ceramic fillerprecursor component may be at least about 30 vol. % for a total volumeof the second forming mixture, such as, at least about 31 vol. % or atleast about 32 vol. % or at least about 33 vol. % or at least about 34vol. % or at least about 35 vol. % or at least about 36 vol. % or atleast about 37 vol. % or at least about 38 vol. % or at least about 39vol. % or at least about 40 vol. % or at least about 41 vol. % or atleast about 42 vol. % or at least about 43 vol. % or at least about 44vol. % or at least about 45 vol. % or 46 vol. % or at least about 47vol. % or at least about 48 vol. % or at least about 49 vol. % or atleast about 50 vol. % or at least about 51 vol. % or at least about 52vol. % or at least about 53 vol. % or even at least about 54 vol. %.According to still other embodiments, the content of the second ceramicfiller precursor component may be not greater than about 57 vol. % for atotal volume of the second forming mixture, such as, not greater thanabout 56 vol. % or even not greater than about 55 vol. %. It will beappreciated that the content of the second ceramic filler precursorcomponent may be any value between, and including, any of the minimumand maximum values noted above. It will be further appreciated that thecontent of the second ceramic filler precursor component may be within arange between, and including, any of the minimum and maximum valuesnoted above.

According to still other embodiments, the second ceramic fillerprecursor component may include a particular content of the third fillerprecursor material. For example, the content of the third fillerprecursor material may be at least about 80 vol. % for a total volume ofthe second ceramic filler precursor component, such as, at least about81 vol. % or at least about 82 vol. % or at least about 83 vol. % or atleast about 84 vol. % or at least about 85 vol. % or at least about 86vol. % or at least about 87 vol. % or at least about 88 vol. % or atleast about 89 vol. % or even at least about 90 vol. %. According tostill other embodiments, the content of the third filler precursormaterial may be not greater than about 100 vol. % for a total volume ofthe second ceramic filler precursor component, such as, not greater thanabout 99 vol. % or not greater than about 98 vol. % or not greater thanabout 97 vol. % or not greater than about 96 vol. % or not greater thanabout 95 vol. % or not greater than about 94 vol. % or not greater thanabout 93 vol. % or even not greater than about 92 vol. %. It will beappreciated that the content of the third filler precursor material maybe any value between, and including, any of the minimum and maximumvalues noted above. It will be further appreciated that the content ofthe third filler precursor material may be within a range between, andincluding, any of the minimum and maximum values noted above.

According to still other embodiments, the second ceramic fillerprecursor component may include a fourth filler precursor material.

According to yet other embodiments, the fourth filler precursor materialmay include a particular material. For example, the fourth fillerprecursor material may include a high dielectric constant ceramicmaterial, such as, a ceramic material having a dielectric constant of atleast about 14. According to particular embodiments, the fourth fillerprecursor material may include any high dielectric constant ceramicmaterial, such as, TiO₂, SrTiO₃, ZrTi₂O₆, MgTiO₃, CaTiO₃, BaTiO₄ or anycombination thereof.

According to yet other embodiments, the fourth filler precursor materialmay include TiO₂. According to still other embodiments, the fourthfiller precursor material may consist of TiO₂.

According to still other embodiments, the second ceramic fillerprecursor component may include a particular content of the fourthfiller precursor material. For example, the content of the fourth fillerprecursor material may be at least about 1 vol. % for a total volume ofthe second ceramic filler precursor component, such as, at least about 2vol. % or at least about 3 vol. % or at least about 4 vol. % or at leastabout 5 vol. % or at least about 6 vol. % or at least about 7 vol. % orat least about 8 vol. % or at least about 9 vol. % or at least about 10vol. %. According to still other embodiments, the content of the fourthfiller precursor material may be not greater than about 20 vol. % for atotal volume of the second ceramic filler precursor component, such as,not greater than about 19 vol. % or not greater than about 18 vol. % ornot greater than about 17 vol. % or not greater than about 16 vol. % ornot greater than about 15 vol. % or not greater than about 14 vol. % ornot greater than about 13 vol. % or not greater than about 12 vol. %. Itwill be appreciated that the content of the fourth filler precursormaterial may be any value between, and including, any of the minimum andmaximum values noted above. It will be further appreciated that thecontent of the fourth filler precursor material may be within a rangebetween, and including, any of the minimum and maximum values notedabove.

According to yet other embodiments, the second ceramic filler precursorcomponent may include a particular content of amorphous material. Forexample, the second ceramic filler precursor component may include atleast about 97% amorphous material, such as, at least about 98% or evenat least about 99%. It will be appreciated that the content of amorphousmaterial may be any value between, and including, any of the valuesnoted above. It will be further appreciated that the content ofamorphous material may be within a range between, and including, any ofthe values noted above.

According to other embodiments, the second resin matrix precursorcomponent may include a particular material. For example, the secondresin matrix precursor component may include a perfluoropolymer.According to still other embodiments, the second resin matrix precursorcomponent may consist of a perfluoropolymer.

According to yet other embodiments, the perfluoropolymer of the firstresin precursor matrix component may include a copolymer oftetrafluoroethylene (TFE); a copolymer of hexafluoropropylene (HFP); aterpolymer of polymer of tetrafluoroethylene (TFE); or any combinationthereof. According to other embodiments, the perfluoropolymer of thesecond resin matrix precursor component may consist of a copolymer oftetrafluoroethylene (TFE); a copolymer of hexafluoropropylene (HFP); aterpolymer of tetrafluoroethylene (TFE); or any combination thereof.

According to yet other embodiments, the perfluoropolymer of the secondresin matrix precursor component may include polytetrafluoroethylene(PTFE), perfluoroalkoxy polymer resin (PFA), fluorinated ethylenepropylene (FEP), or any combination thereof. According to still otherembodiments, the perfluoropolymer of the second resin matrix precursorcomponent may consist of polytetrafluoroethylene (PTFE), perfluoroalkoxypolymer resin (PFA), fluorinated ethylene propylene (FEP), or anycombination thereof.

According to yet other embodiments, the second forming mixture mayinclude a particular content of the second resin matrix precursorcomponent. For example, the content of the second resin matrix precursorcomponent may be at least about 45 vol. % for a total volume of thesecond forming mixture, such as, at least about 46 vol. % or at leastabout 47 vol. % or at least about 48 vol. % or at least about 49 vol. %or at least about 50 vol. % or at least about 51 vol. % or at leastabout 52 vol. % or at least about 53 vol. % or at least about 54 vol. %or even at least about 55 vol. %. According to still other embodiments,the content of the second resin matrix precursor component is notgreater than about 63 vol. % for a total volume of the second formingmixture or not greater than about 62 vol. % or not greater than about 61vol. % or not greater than about 60 vol. % or not greater than about 59vol. % or not greater than about 58 vol. % or even not greater thanabout 57 vol. %. It will be appreciated that the content of the secondresin matrix precursor component may be any value between, andincluding, any of the minimum and maximum values noted above. It will befurther appreciated that the content of the second resin matrixprecursor component may be within a range between, and including, any ofthe minimum and maximum values noted above.

According to yet other embodiments, the second forming mixture mayinclude a particular content of the perfluoropolymer. For example, thecontent of the perfluoropolymer may be at least about 45 vol. % for atotal volume of the second forming mixture, such as, at least about 46vol. % or at least about 47 vol. % or at least about 48 vol. % or atleast about 49 vol. % or at least about 50 vol. % or at least about 51vol. % or at least about 52 vol. % or at least about 53 vol. % or atleast about 54 vol. % or even at least about 55 vol. %. According tostill other embodiments, the content of the perfluoropolymer may be notgreater than about 63 vol. % for a total volume of the second formingmixture, such as, not greater than about 62 vol. % or not greater thanabout 61 vol. % or not greater than about 60 vol. % or not greater thanabout 59 vol. % or not greater than about 58 vol. % or even not greaterthan about 57 vol. %. It will be appreciated that the content of theperfluoropolymer may be any value between, and including, any of theminimum and maximum values noted above. It will be further appreciatedthat the content of the perfluoropolymer may be within a range between,and including, any of the minimum and maximum values noted above.

Referring now to embodiments of the copper-clad laminate formedaccording to forming method 300, FIG. 4a includes a diagram of acopper-clad lamination 400. As shown in FIG. 4a , the copper-cladlaminate 400 may include a copper foil layer 403, and a dielectricsubstrate 405 overlying a surface of the copper foil layer 403. Asfurther shown in FIG. 4a , the dielectric substrate 405 may include apolyimide layer 402 and a first filled polymer layer 404 overlying thepolyimide layer 402. As shown in FIG. 4a , the first filled polymerlayer 404 may include a first resin matrix component 410 and a firstceramic filler component 420.

According to particular embodiments, the first ceramic filler component420 may include a first filler material, which may have particularcharacteristics that may improve performance of the dielectric substrate405.

According to certain embodiments, the first filler material of the firstceramic filler component 420 may have a particular size distribution.For purposes of embodiments described herein, the particle sizedistribution of a material, for example, the particle size distributionof a first filler material may be described using any combination ofparticle size distribution D-values D₁₀, D₅₀ and D₉₀. The D₁₀ value froma particle size distribution is defined as a particle size value where10% of the particles are smaller than the value and 90% of the particlesare larger than the value. The D₅₀ value from a particle sizedistribution is defined as a particle size value where 50% of theparticles are smaller than the value and 50% of the particles are largerthan the value. The D₉₀ value from a particle size distribution isdefined as a particle size value where 90% of the particles are smallerthan the value and 10% of the particles are larger than the value. Forpurposes of embodiments described herein, particle size measurements fora particular material are made using laser diffraction spectroscopy.

According to certain embodiments, the first filler material of the firstceramic filler component 420 may have a particular size distribution D₁₀value. For example, the D₁₀ of the first filler material may be at leastabout 0.2 microns, such as, at least about 0.3 microns or at least about0.4 microns or at least about 0.5 microns or at least about 0.6 micronsor at least about 0.7 microns or at least about 0.8 microns or at leastabout 0.9 microns or at least about 1.0 microns or at least about 1.1microns or even at least about 1.2 microns. According to still otherembodiments, the D₁₀ of the first filler material may be not greaterthan about 1.6 microns, such as, not greater than about 1.5 microns oreven not greater than about 1.4 microns. It will be appreciated that theD₁₀ of the first filler material may be any value between, andincluding, any of the minimum and maximum values noted above. It will befurther appreciated that the D₁₀ of the first filler material may bewithin a range between, and including, any of the minimum and maximumvalues noted above.

According to other embodiments, the first filler material of the firstceramic filler component 420 may have a particular size distribution D₅₀value. For example, the D₅₀ of the first filler material may be at leastabout 0.8 microns, such as, at least about 0.9 microns or at least about1.0 microns or at least about 1.1 microns or at least about 1.2 micronsor at least about 1.3 microns or at least about 1.4 microns or at leastabout 1.5 microns or at least about 1.6 microns or at least about 1.7microns or at least about 1.8 microns or at least about 1.9 microns orat least about 2.0 microns or at least about 2.1 microns or even atleast about 2.2 microns. According to still other embodiments, the D₅₀of the first filler material may be not greater than about 2.7 microns,such as, not greater than about 2.6 microns or not greater than about2.5 microns or even not greater than about 2.4. It will be appreciatedthat the D₅₀ of the first filler material may be any value between, andincluding, any of the minimum and maximum values noted above. It will befurther appreciated that the D₅₀ of the first filler material may bewithin a range between, and including, any of the minimum and maximumvalues noted above.

According to other embodiments, the first filler material of the firstceramic filler component 420 may have a particular size distribution D₉₀value. For example, the D₉₀ of the first filler material may be at leastabout 0.8 microns, such as, at least about 0.9 or at least about 1.0 orat least about 1.1 or at least about 1.2 or at least about 1.3 or atleast about 1.4 or at least about 1.5 or at least about 1.6 microns orat least about 1.7 microns or at least about 1.8 microns or at leastabout 1.9 microns or at least about 2.0 microns or at least about 2.1microns or at least about 2.2 microns or at least about 2.3 microns orat least about 2.4 microns or at least about 2.5 microns or at leastabout 2.6 microns or even at least about 2.7 microns. According to stillother embodiments, the D₉₀ of the first filler material may be notgreater than about 8.0 microns, such as, not greater than about 7.5microns or not greater than about 7.0 microns or not greater than about6.5 microns or not greater than about 6.0 microns or not greater thanabout 5.5 microns or not greater than about 5.4 microns or not greaterthan about 5.3 microns or not greater than about 5.2 or even not greaterthan about 5.1 microns. It will be appreciated that the D₉₀ of the firstfiller material may be any value between, and including, any of theminimum and maximum values noted above. It will be further appreciatedthat the D₉₀ of the first filler material may be within a range between,and including, any of the minimum and maximum values noted above.

According to still other embodiments, the first filler material of thefirst ceramic filler component 420 may have a particular averageparticle size as measured according to laser diffraction spectroscopy.For example, the mean particle size of the first filler material may benot greater than about 10 microns, such as, not greater than about 9microns or not greater than about 8 microns or not greater than about 7microns or not greater than about 6 microns or not greater than about 5microns or not greater than about 4 microns or not greater than about 3microns or even not greater than about 2 microns. It will be appreciatedthat the mean particle size of the first filler material may be anyvalue between, and including, any of the values noted above. It will befurther appreciated that the mean particle size of the first fillermaterial may be within a range between, and including, any of the valuesnoted above.

According to still other embodiments, the first filler material of thefirst ceramic filler component 420 may be described as having aparticular particle size distribution span (PSDS), where the PSDS isequal to (D₉₀-D₁₀)/D₅₀, where D₉₀ is equal to a D₉₀ particle sizedistribution measurement of the first filler material, D₁₀ is equal to aD₁₀ particle size distribution measurement of the first filler material,and D₅₀ is equal to a D₅₀ particle size distribution measurement of thefirst filler material. For example, the PSDS of the first fillermaterial may be not greater than about 5, such as, not greater thanabout 4.5 or not greater than about 4.0 or not greater than about 3.5 ornot greater than about 3.0 or even not greater than about 2.5. It willbe appreciated that the PSDS of the first filler material may be anyvalue between, and including, any of the values noted above. It will befurther appreciated that the PSDS of the first filler material may bewithin a range between, and including, any of the values noted above.

According to still other embodiments, the first filler material of thefirst ceramic filler component 420 may be described as having aparticular average surface area as measured using Brunauer-Emmett-Teller(BET) surface area analysis (Nitrogen Adsorption). For example, thefirst filler material may have an average surface area of not greaterthan about 10 m²/g, such as, not greater than about 9.9 m²/g or notgreater than about 9.5 m²/g or not greater than about 9.0 m²/g or notgreater than about 8.5 m²/g or not greater than about 8.0 m²/g or notgreater than about 7.5 m²/g or not greater than about 7.0 m²/g or notgreater than about 6.5 m²/g or not greater than about 6.0 m²/g or notgreater than about 5.5 m²/g or not greater than about 5.0 m²/g or notgreater than about 4.5 m²/g or not greater than about 4.0 m²/g or evennot greater than about 3.5 m²/g. According to still other embodiments,the first filler material may have an average surface area of at leastabout 1.2 m²/g, such as, at least about 2.4 m²/g. It will be appreciatedthat the average surface area of the first filler material may be anyvalue between, and including, any of the minimum and maximum valuesnoted above. It will be further appreciated that the average surfacearea of the first filler material may be within a range between, andincluding, any of the minimum and maximum values noted above.

According to other embodiments, the first filler material of the firstceramic filler component 420 may include a particular material.According to particular embodiments, the first filler material mayinclude a silica-based compound. According to still other embodiments,the first filler material may consist of a silica-based compound.According to other embodiments, the first filler material may includesilica. According to still other embodiments, the first filler materialmay consist of silica.

According to yet other embodiments, the first filled polymer layer 404may include a particular content of the first ceramic filler component420. For example, the content of the first ceramic filler component 420may be at least about 50 vol. % for a total volume of the first filledpolymer layer 404, such as, at least about 51 vol. % or at least about52 vol. % or at least about 53 vol. % or even at least about 54 vol. %.According to still other embodiments, the content of the ceramic fillercomponent 220 may be not greater than about 57 vol. % for a total volumeof the first filled polymer layer 404, such as, not greater than about56 vol. % or even not greater than about 55 vol. %. It will beappreciated that the content of the first ceramic filler component 420may be any value between, and including, any of the minimum and maximumvalues noted above. It will be further appreciated that the content ofthe first ceramic filler component 420 may be within a range between,and including, any of the minimum and maximum values noted above.

According to still other embodiments, the first ceramic filler component420 may include a particular content of the first filler material. Forexample, the content of the first filler material may be at least about80 vol. % for a total volume of the first ceramic filler component 420,such as, at least about 81 vol. % or at least about 82 vol. % or atleast about 83 vol. % or at least about 84 vol. % or at least about 85vol. % or at least about 86 vol. % or at least about 87 vol. % or atleast about 88 vol. % or at least about 89 vol. % or even at least about90 vol. %. According to still other embodiments, the content of thefirst filler material may be not greater than about 100 vol. % for atotal volume of the first ceramic filler component 420, such as, notgreater than about 99 vol. % or not greater than about 98 vol. % or notgreater than about 97 vol. % or not greater than about 96 vol. % or notgreater than about 95 vol. % or not greater than about 94 vol. % or notgreater than about 93 vol. % or even not greater than about 92 vol. %.It will be appreciated that the content of the first filler material maybe any value between, and including, any of the minimum and maximumvalues noted above. It will be further appreciated that the content ofthe first filler material may be within a range between, and including,any of the minimum and maximum values noted above.

According to still other embodiments, the first ceramic filler component420 may include a second filler material.

According to yet other embodiments, the second filler material of thefirst ceramic filler component 420 may include a particular material.For example, the second filler material may include a high dielectricconstant ceramic material, such as, a ceramic material having adielectric constant of at least about 14. According to particularembodiments, the second filler material of the first ceramic fillercomponent 420 may include any high dielectric constant ceramic material,such as, TiO₂, SrTiO₃, ZrTi₂O₆, MgTiO₃, CaTiO₃, BaTiO₄ or anycombination thereof.

According to yet other embodiments, the second filler material of thefirst ceramic filler component 420 may include TiO₂. According to stillother embodiments, the second filler material may consist of TiO₂.

According to still other embodiments, the first ceramic filler component420 may include a particular content of the second filler material. Forexample, the content of the second filler material may be at least about1 vol. % for a total volume of the first ceramic filler component 420,such as, at least about 2 vol. % or at least about 3 vol. % or at leastabout 4 vol. % or at least about 5 vol. % or at least about 6 vol. % orat least about 7 vol. % or at least about 8 vol. % or at least about 9vol. % or at least about 10 vol. %. According to still otherembodiments, the content of the second filler material may be notgreater than about 20 vol. % for a total volume of the first ceramicfiller component 420, such as, not greater than about 19 vol. % or notgreater than about 18 vol. % or not greater than about 17 vol. % or notgreater than about 16 vol. % or not greater than about 15 vol. % or notgreater than about 14 vol. % or not greater than about 13 vol. % or notgreater than about 12 vol. %. It will be appreciated that the content ofthe second filler material may be any value between, and including, anyof the minimum and maximum values noted above. It will be furtherappreciated that the content of the second filler material may be withina range between, and including, any of the minimum and maximum valuesnoted above.

According to yet other embodiments, the first ceramic filler component420 may include a particular content of amorphous material. For example,the first ceramic filler component 420 may include at least about 97%amorphous material, such as, at least about 98% or even at least about99%. It will be appreciated that the content of amorphous material maybe any value between, and including, any of the values noted above. Itwill be further appreciated that the content of amorphous material maybe within a range between, and including, any of the values noted above.

According to other embodiments, the first resin matrix component 410 mayinclude a particular material. For example, the first resin matrixcomponent 410 may include a perfluoropolymer. According to still otherembodiments, the first resin matrix component 410 may consist of aperfluoropolymer.

According to yet other embodiments, the perfluoropolymer of the firstresin matrix component 410 may include a copolymer oftetrafluoroethylene (TFE); a copolymer of hexafluoropropylene (HFP); aterpolymer of tetrafluoroethylene (TFE); or any combination thereof.According to other embodiments, the perfluoropolymer of the first resinmatrix component 410 may consist of a copolymer of tetrafluoroethylene(TFE); a copolymer of hexafluoropropylene (HFP); a terpolymer oftetrafluoroethylene (TFE); or any combination thereof.

According to yet other embodiments, the perfluoropolymer of the firstresin matrix component 410 may include polytetrafluoroethylene (PTFE),perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene(FEP), or any combination thereof. According to still other embodiments,the perfluoropolymer of the first resin matrix component 410 may consistof polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin (PFA),fluorinated ethylene propylene (FEP), or any combination thereof.

According to yet other embodiments, the first filled polymer layer 404may include a particular content of the first resin matrix component410. For example, the content of the first resin matrix component 410may be at least about 45 vol. % for a total volume of the first filledpolymer layer 404, such as, at least about 46 vol. % or at least about47 vol. % or at least about 48 vol. % or at least about 49 vol. % or atleast about 50 vol. % or at least about 51 vol. % or at least about 52vol. % or at least about 53 vol. % or at least about 54 vol. % or evenat least about 55 vol. %. According to still other embodiments, thecontent of the first resin matrix component 410 is not greater thanabout 63 vol. % for a total volume of the first filled polymer layer 404or not greater than about 62 vol. % or not greater than about 61 vol. %or not greater than about 60 vol. % or not greater than about 59 vol. %or not greater than about 58 vol. % or even not greater than about 57vol. %. It will be appreciated that the content of the first resinmatrix component 410 may be any value between, and including, any of theminimum and maximum values noted above. It will be further appreciatedthat the content of the first resin matrix component 410 may be within arange between, and including, any of the minimum and maximum valuesnoted above.

According to yet other embodiments, the first filled polymer layer 404may include a particular content of the perfluoropolymer. For example,the content of the perfluoropolymer may be at least about 45 vol. % fora total volume of the first filled polymer layer 404, such as, at leastabout 46 vol. % or at least about 47 vol. % or at least about 48 vol. %or at least about 49 vol. % or at least about 50 vol. % or at leastabout 51 vol. % or at least about 52 vol. % or at least about 53 vol. %or at least about 54 vol. % or even at least about 55 vol. %. Accordingto still other embodiments, the content of the perfluoropolymer may benot greater than about 63 vol. % for a total volume of the first filledpolymer layer 404, such as, not greater than about 62 vol. % or notgreater than about 61 vol. % or not greater than about 60 vol. % or notgreater than about 59 vol. % or not greater than about 58 vol. % or evennot greater than about 57 vol. %. It will be appreciated that thecontent of the perfluoropolymer may be any value between, and including,any of the minimum and maximum values noted above. It will be furtherappreciated that the content of the perfluoropolymer may be within arange between, and including, any of the minimum and maximum valuesnoted above.

According to still other embodiments, the dielectric substrate 405 mayinclude a particular porosity as measured using x-ray diffraction. Forexample, the porosity of the substrate 405 may be not greater than about10 vol. %, such as, not greater than about 9 vol. % or not greater thanabout 8 vol. % or not greater than about 7 vol. % or not greater thanabout 6 vol. % or even not greater than about 5 vol. %. It will beappreciated that the porosity of the dielectric substrate 405 may be anyvalue between, and including, any of the values noted above. It will befurther appreciated that the porosity of the dielectric substrate 405may be within a range between, and including, any of the values notedabove.

According to yet other embodiments, the dielectric substrate 405 mayhave a particular average thickness. For example, the average thicknessof the dielectric substrate 405 may be at least about 10 microns, suchas, at least about 15 microns or at least about 20 microns or at leastabout 25 microns or at least about 30 microns or at least about 35microns or at least about 40 microns or at least about 45 microns or atleast about 50 microns or at least about 55 microns or at least about 60microns or at least about 65 microns or at least about 70 microns oreven at least about 75 microns. According to yet other embodiments, theaverage thickness of the dielectric substrate 405 may be not greaterthan about 2000 microns, such as, not greater than about 1800 microns ornot greater than about 1600 microns or not greater than about 1400microns or not greater than about 1200 microns or not greater than about1000 microns or not greater than about 800 microns or not greater thanabout 600 microns or not greater than about 400 microns or not greaterthan about 200 microns or not greater than about 190 microns or notgreater than about 180 microns or not greater than about 170 microns ornot greater than about 160 microns or not greater than about 150 micronsor not greater than about 140 microns or not greater than about 120microns or even not greater than about 100 microns. It will beappreciated that the average thickness of the dielectric substrate 405may be any value between, and including, any of the minimum and maximumvalues noted above. It will be further appreciated that the averagethickness of the dielectric substrate 405 may be within a range between,and including, any of the minimum and maximum values noted above.

According to yet other embodiments, the dielectric substrate 405 mayhave a particular dissipation factor (Df) as measured in the rangebetween 5 GHz, 20% RH. For example, the dielectric substrate 405 mayhave a dissipation factor of not greater than about 0.005, such as, notgreater than about 0.004 or not greater than about 0.003 or not greaterthan about 0.002 or not greater than about 0.0019 or not greater thanabout 0.0018 or not greater than about 0.0017 or not greater than about0.0016 or not greater than about 0.0015 or not greater than about0.0014. It will be appreciated that the dissipation factor of thedielectric substrate 405 may be any value between, and including, any ofthe values noted above. It will be further appreciated that thedissipation factor of the dielectric substrate 405 may be within a rangebetween, and including, any of the values noted above.

According to yet other embodiments, the dielectric substrate 405 mayhave a particular dissipation factor (Df) as measured in the rangebetween 5 GHz, 80% RH. For example, the dielectric substrate 405 mayhave a dissipation factor of not greater than about 0.005, such as, notgreater than about 0.004 or not greater than about 0.003 or not greaterthan about 0.002 or not greater than about 0.0019 or not greater thanabout 0.0018 or not greater than about 0.0017 or not greater than about0.0016 or not greater than about 0.0015 or not greater than about0.0014. It will be appreciated that the dissipation factor of thedielectric substrate 405 may be any value between, and including, any ofthe values noted above. It will be further appreciated that thedissipation factor of the dielectric substrate 405 may be within a rangebetween, and including, any of the values noted above.

According to yet other embodiments, the dielectric substrate 405 mayhave a particular dissipation factor (Df) as measured in the rangebetween 10 GHz, 20% RH. For example, the dielectric substrate 405 mayhave a dissipation factor of not greater than about 0.005, such as, notgreater than about 0.004 or not greater than about 0.003 or not greaterthan about 0.002 or not greater than about 0.0019 or not greater thanabout 0.0018 or not greater than about 0.0017 or not greater than about0.0016 or not greater than about 0.0015 or not greater than about0.0014. It will be appreciated that the dissipation factor of thedielectric substrate 405 may be any value between, and including, any ofthe values noted above. It will be further appreciated that thedissipation factor of the dielectric substrate 405 may be within a rangebetween, and including, any of the values noted above.

According to yet other embodiments, the dielectric substrate 405 mayhave a particular dissipation factor (Df) as measured in the rangebetween 10 GHz, 80% RH. For example, the dielectric substrate 405 mayhave a dissipation factor of not greater than about 0.005, such as, notgreater than about 0.004 or not greater than about 0.003 or not greaterthan about 0.002 or not greater than about 0.0019 or not greater thanabout 0.0018 or not greater than about 0.0017 or not greater than about0.0016 or not greater than about 0.0015 or not greater than about0.0014. It will be appreciated that the dissipation factor of thedielectric substrate 405 may be any value between, and including, any ofthe values noted above. It will be further appreciated that thedissipation factor of the dielectric substrate 405 may be within a rangebetween, and including, any of the values noted above.

According to yet other embodiments, the dielectric substrate 405 mayhave a particular dissipation factor (Df) as measured in the rangebetween 28 GHz, 20% RH. For example, the dielectric substrate 405 mayhave a dissipation factor of not greater than about 0.005, such as, notgreater than about 0.004 or not greater than about 0.003 or not greaterthan about 0.002 or not greater than about 0.0019 or not greater thanabout 0.0018 or not greater than about 0.0017 or not greater than about0.0016 or not greater than about 0.0015 or not greater than about0.0014. It will be appreciated that the dissipation factor of thedielectric substrate 405 may be any value between, and including, any ofthe values noted above. It will be further appreciated that thedissipation factor of the dielectric substrate 405 may be within a rangebetween, and including, any of the values noted above.

According to yet other embodiments, the dielectric substrate 405 mayhave a particular dissipation factor (Df) as measured in the rangebetween 28 GHz, 80% RH. For example, the dielectric substrate 405 mayhave a dissipation factor of not greater than about 0.005, such as, notgreater than about 0.004 or not greater than about 0.003 or not greaterthan about 0.002 or not greater than about 0.0019 or not greater thanabout 0.0018 or not greater than about 0.0017 or not greater than about0.0016 or not greater than about 0.0015 or not greater than about0.0014. It will be appreciated that the dissipation factor of thedielectric substrate 405 may be any value between, and including, any ofthe values noted above. It will be further appreciated that thedissipation factor of the dielectric substrate 405 may be within a rangebetween, and including, any of the values noted above.

According to yet other embodiments, the dielectric substrate 405 mayhave a particular dissipation factor (Df) as measured in the rangebetween 39 GHz, 20% RH. For example, the dielectric substrate 405 mayhave a dissipation factor of not greater than about 0.005, such as, notgreater than about 0.004 or not greater than about 0.003 or not greaterthan about 0.002 or not greater than about 0.0019 or not greater thanabout 0.0018 or not greater than about 0.0017 or not greater than about0.0016 or not greater than about 0.0015 or not greater than about0.0014. It will be appreciated that the dissipation factor of thedielectric substrate 405 may be any value between, and including, any ofthe values noted above. It will be further appreciated that thedissipation factor of the dielectric substrate 405 may be within a rangebetween, and including, any of the values noted above.

According to yet other embodiments, the dielectric substrate 405 mayhave a particular dissipation factor (Df) as measured in the rangebetween 39 GHz, 80% RH. For example, the dielectric substrate 405 mayhave a dissipation factor of not greater than about 0.005, such as, notgreater than about 0.004 or not greater than about 0.003 or not greaterthan about 0.002 or not greater than about 0.0019 or not greater thanabout 0.0018 or not greater than about 0.0017 or not greater than about0.0016 or not greater than about 0.0015 or not greater than about0.0014. It will be appreciated that the dissipation factor of thedielectric substrate 405 may be any value between, and including, any ofthe values noted above. It will be further appreciated that thedissipation factor of the dielectric substrate 405 may be within a rangebetween, and including, any of the values noted above.

According to yet other embodiments, the dielectric substrate 405 mayhave a particular dissipation factor (Df) as measured in the rangebetween 76-81 GHz, 20% RH. For example, the dielectric substrate 405 mayhave a dissipation factor of not greater than about 0.005, such as, notgreater than about 0.004 or not greater than about 0.003 or not greaterthan about 0.002 or not greater than about 0.0019 or not greater thanabout 0.0018 or not greater than about 0.0017 or not greater than about0.0016 or not greater than about 0.0015 or not greater than about0.0014. It will be appreciated that the dissipation factor of thedielectric substrate 405 may be any value between, and including, any ofthe values noted above. It will be further appreciated that thedissipation factor of the dielectric substrate 405 may be within a rangebetween, and including, any of the values noted above.

According to yet other embodiments, the dielectric substrate 405 mayhave a particular dissipation factor (Df) as measured in the rangebetween 76-81 GHz, 80% RH. For example, the dielectric substrate 405 mayhave a dissipation factor of not greater than about 0.005, such as, notgreater than about 0.004 or not greater than about 0.003 or not greaterthan about 0.002 or not greater than about 0.0019 or not greater thanabout 0.0018 or not greater than about 0.0017 or not greater than about0.0016 or not greater than about 0.0015 or not greater than about0.0014. It will be appreciated that the dissipation factor of thedielectric substrate 405 may be any value between, and including, any ofthe values noted above. It will be further appreciated that thedissipation factor of the dielectric substrate 405 may be within a rangebetween, and including, any of the values noted above.

According to yet other embodiments, the dielectric substrate 405 mayhave a particular coefficient of thermal expansion as measured accordingto IPC-TM-650 2.4.24 Rev. C Glass Transition Temperature and Z-AxisThermal Expansion by TMA. For example, the dielectric substrate 405 mayhave a coefficient of thermal expansion of not greater than about 80ppm/° C.

According to other embodiments of a copper-clad laminate formedaccording to forming method 300, FIG. 4b includes a diagram of acopper-clad lamination 401. As shown in FIG. 4a , the copper-cladlaminate 401 may include a copper foil layer 403, and a dielectricsubstrate 405 overlying a surface of the copper foil layer 403. As shownin FIG. 4b , the dielectric substrate 405 may include the polyimidelayer 402, the first filled polymer layer 404 overlying the polyimidelayer 402, and a second filled polymer layer 406 underlying thepolyimide layer 402. As shown in FIG. 4b , the second filled polymerlayer 406 may include a second resin matrix component 430 and a secondceramic filler component 440.

According to particular embodiments, the second ceramic filler component440 may include a third filler material, which may have particularcharacteristics that may improve performance of the dielectric substrate405.

According to certain embodiments, the third filler material of thesecond ceramic filler component 440 may have a particular sizedistribution. For purposes of embodiments described herein, the particlesize distribution of a material, for example, the particle sizedistribution of a third filler material may be described using anycombination of particle size distribution D-values D₁₀, D₅₀ and D₉₀. TheD₁₀ value from a particle size distribution is defined as a particlesize value where 10% of the particles are smaller than the value and 90%of the particles are larger than the value. The D₅₀ value from aparticle size distribution is defined as a particle size value where 50%of the particles are smaller than the value and 50% of the particles arelarger than the value. The D₉₀ value from a particle size distributionis defined as a particle size value where 90% of the particles aresmaller than the value and 10% of the particles are larger than thevalue. For purposes of embodiments described herein, particle sizemeasurements for a particular material are made using laser diffractionspectroscopy.

According to certain embodiments, the third filler material of thesecond ceramic filler component 440 may have a particular sizedistribution D₁₀ value. For example, the D₁₀ of the third fillermaterial may be at least about 0.2 microns, such as, at least about 0.3microns or at least about 0.4 microns or at least about 0.5 microns orat least about 0.6 microns or at least about 0.7 microns or at leastabout 0.8 microns or at least about 0.9 microns or at least about 1.0microns or at least about 1.1 microns or even at least about 1.2microns. According to still other embodiments, the D₁₀ of the thirdfiller material may be not greater than about 1.6 microns, such as, notgreater than about 1.5 microns or even not greater than about 1.4microns. It will be appreciated that the D₁₀ of the third fillermaterial may be any value between, and including, any of the minimum andmaximum values noted above. It will be further appreciated that the D₁₀of the third filler material may be within a range between, andincluding, any of the minimum and maximum values noted above.

According to other embodiments, the third filler material of the secondceramic filler component 440 may have a particular size distribution D₅₀value. For example, the D₅₀ of the third filler material may be at leastabout 0.8 microns, such as, at least about 0.9 microns or at least about1.0 microns or at least about 1.1 microns or at least about 1.2 micronsor at least about 1.3 microns or at least about 1.4 microns or at leastabout 1.5 microns or at least about 1.6 microns or at least about 1.7microns or at least about 1.8 microns or at least about 1.9 microns orat least about 2.0 microns or at least about 2.1 microns or even atleast about 2.2 microns. According to still other embodiments, the D₅₀of the third filler material may be not greater than about 2.7 microns,such as, not greater than about 2.6 microns or not greater than about2.5 microns or even not greater than about 2.4. It will be appreciatedthat the D₅₀ of the third filler material may be any value between, andincluding, any of the minimum and maximum values noted above. It will befurther appreciated that the D₅₀ of the third filler material may bewithin a range between, and including, any of the minimum and maximumvalues noted above.

According to other embodiments, the third filler material of the secondceramic filler component 440 may have a particular size distribution D₉₀value. For example, the D₉₀ of the third filler material may be at leastabout 0.8 microns, such as, at least about 0.9 or at least about 1.0 orat least about 1.1 or at least about 1.2 or at least about 1.3 or atleast about 1.4 or at least about 1.5 or at least about 1.6 microns orat least about 1.7 microns or at least about 1.8 microns or at leastabout 1.9 microns or at least about 2.0 microns or at least about 2.1microns or at least about 2.2 microns or at least about 2.3 microns orat least about 2.4 microns or at least about 2.5 microns or at leastabout 2.6 microns or even at least about 2.7 microns. According to stillother embodiments, the D₉₀ of the third filler material may be notgreater than about 8.0 microns, such as, not greater than about 7.5microns or not greater than about 7.0 microns or not greater than about6.5 microns or not greater than about 6.0 microns or not greater thanabout 5.5 microns or not greater than about 5.4 microns or not greaterthan about 5.3 microns or not greater than about 5.2 or even not greaterthan about 5.1 microns. It will be appreciated that the D₉₀ of the thirdfiller material may be any value between, and including, any of theminimum and maximum values noted above. It will be further appreciatedthat the D₉₀ of the third filler material may be within a range between,and including, any of the minimum and maximum values noted above.

According to still other embodiments, the third filler material of thesecond ceramic filler component 440 may have a particular averageparticle size as measured according to laser diffraction spectroscopy.For example, the mean particle size of the third filler material may benot greater than about 10 microns, such as, not greater than about 9microns or not greater than about 8 microns or not greater than about 7microns or not greater than about 6 microns or not greater than about 5microns or not greater than about 4 microns or not greater than about 3microns or even not greater than about 2 microns. It will be appreciatedthat the mean particle size of the third filler material may be anyvalue between, and including, any of the values noted above. It will befurther appreciated that the mean particle size of the third fillermaterial may be within a range between, and including, any of the valuesnoted above.

According to still other embodiments, the third filler material of thesecond ceramic filler component 440 may be described as having aparticular particle size distribution span (PSDS), where the PSDS isequal to (D₉₀-D₁₀)/D₅₀, where D₉₀ is equal to a D₉₀ particle sizedistribution measurement of the third filler material, D₁₀ is equal to aD₁₀ particle size distribution measurement of the third filler material,and D₅₀ is equal to a D₅₀ particle size distribution measurement of thethird filler material. For example, the PSDS of the third fillermaterial may be not greater than about 5, such as, not greater thanabout 4.5 or not greater than about 4.0 or not greater than about 3.5 ornot greater than about 3.0 or even not greater than about 2.5. It willbe appreciated that the PSDS of the third filler material may be anyvalue between, and including, any of the values noted above. It will befurther appreciated that the PSDS of the third filler material may bewithin a range between, and including, any of the values noted above.

According to still other embodiments, the third filler material of thesecond ceramic filler component 440 may be described as having aparticular average surface area as measured using Brunauer-Emmett-Teller(BET) surface area analysis (Nitrogen Adsorption). For example, thethird filler material may have an average surface area of not greaterthan about 10 m²/g, such as, not greater than about 9.9 m²/g or notgreater than about 9.5 m²/g or not greater than about 9.0 m²/g or notgreater than about 8.5 m²/g or not greater than about 8.0 m²/g or notgreater than about 7.5 m²/g or not greater than about 7.0 m²/g or notgreater than about 6.5 m²/g or not greater than about 6.0 m²/g or notgreater than about 5.5 m²/g or not greater than about 5.0 m²/g or notgreater than about 4.5 m²/g or not greater than about 4.0 m²/g or evennot greater than about 3.5 m²/g. According to still other embodiments,the third filler material may have an average surface area of at leastabout 1.2 m²/g, such as, at least about 2.4 m²/g. It will be appreciatedthat the average surface area of the third filler material may be anyvalue between, and including, any of the minimum and maximum valuesnoted above. It will be further appreciated that the average surfacearea of the third filler material may be within a range between, andincluding, any of the minimum and maximum values noted above.

According to other embodiments, the third filler material of the secondceramic filler component 440 may include a particular material.According to particular embodiments, the third filler material mayinclude a silica-based compound. According to still other embodiments,the third filler material may consist of a silica-based compound.According to other embodiments, the third filler material may includesilica. According to still other embodiments, the third filler materialmay consist of silica.

According to yet other embodiments, the first filled polymer layer 404may include a particular content of the second ceramic filler component440. For example, the content of the second ceramic filler component 440may be at least about 30 vol. % for a total volume of the first filledpolymer layer 404, such as, at least about 31 vol. % or at least about32 vol. % or at least about 33 vol. % or at least about 34 vol. % or atleast about 35 vol. % or at least about 36 vol. % or at least about 37vol. % or at least about 38 vol. % or at least about 39 vol. % or atleast about 40 vol. % or at least about 41 vol. % or at least about 42vol. % or at least about 43 vol. % or at least about 44 vol. % or atleast about 45 vol. % or 46 vol. % or at least about 47 vol. % or atleast about 48 vol. % or at least about 49 vol. % or at least about 50vol. % or at least about 51 vol. % or at least about 52 vol. % or atleast about 53 vol. % or even at least about 54 vol. %. According tostill other embodiments, the content of the second ceramic fillercomponent 440 may be not greater than about 57 vol. % for a total volumeof the first filled polymer layer 404, such as, not greater than about56 vol. % or even not greater than about 55 vol. %. It will beappreciated that the content of the ceramic filler component 220 may beany value between, and including, any of the minimum and maximum valuesnoted above. It will be further appreciated that the content of theceramic filler component 220 may be within a range between, andincluding, any of the minimum and maximum values noted above.

According to still other embodiments, the second ceramic fillercomponent 440 may include a particular content of the third fillermaterial. For example, the content of the third filler material may beat least about 80 vol. % for a total volume of the second ceramic fillercomponent 440, such as, at least about 81 vol. % or at least about 82vol. % or at least about 83 vol. % or at least about 84 vol. % or atleast about 85 vol. % or at least about 86 vol. % or at least about 87vol. % or at least about 88 vol. % or at least about 89 vol. % or evenat least about 90 vol. %. According to still other embodiments, thecontent of the third filler material may be not greater than about 100vol. % for a total volume of the second ceramic filler component 440,such as, not greater than about 99 vol. % or not greater than about 98vol. % or not greater than about 97 vol. % or not greater than about 96vol. % or not greater than about 95 vol. % or not greater than about 94vol. % or not greater than about 93 vol. % or even not greater thanabout 92 vol. %. It will be appreciated that the content of the thirdfiller material may be any value between, and including, any of theminimum and maximum values noted above. It will be further appreciatedthat the content of the third filler material may be within a rangebetween, and including, any of the minimum and maximum values notedabove.

According to still other embodiments, the second ceramic fillercomponent 440 may include a fourth filler material.

According to yet other embodiments, the fourth filler material of thesecond ceramic filler component 440 may include a particular material.For example, the fourth filler material may include a high dielectricconstant ceramic material, such as, a ceramic material having adielectric constant of at least about 14. According to particularembodiments, the fourth filler material of the second ceramic fillercomponent 440 may include any high dielectric constant ceramic material,such as, TiO₂, SrTiO₃, ZrTi₂O₆, MgTiO₃, CaTiO₃, BaTiO₄ or anycombination thereof.

According to yet other embodiments, the fourth filler material of thesecond ceramic filler component 440 may include TiO₂. According to stillother embodiments, the fourth filler material may consist of TiO₂.

According to still other embodiments, the second ceramic fillercomponent 440 may include a particular content of the fourth fillermaterial. For example, the content of the fourth filler material may beat least about 1 vol. % for a total volume of the second ceramic fillercomponent 440, such as, at least about 2 vol. % or at least about 3 vol.% or at least about 4 vol. % or at least about 5 vol. % or at leastabout 6 vol. % or at least about 7 vol. % or at least about 8 vol. % orat least about 9 vol. % or at least about 10 vol. %. According to stillother embodiments, the content of the fourth filler material may be notgreater than about 20 vol. % for a total volume of the second ceramicfiller component 440, such as, not greater than about 19 vol. % or notgreater than about 18 vol. % or not greater than about 17 vol. % or notgreater than about 16 vol. % or not greater than about 15 vol. % or notgreater than about 14 vol. % or not greater than about 13 vol. % or notgreater than about 12 vol. %. It will be appreciated that the content ofthe fourth filler material may be any value between, and including, anyof the minimum and maximum values noted above. It will be furtherappreciated that the content of the fourth filler material may be withina range between, and including, any of the minimum and maximum valuesnoted above.

According to yet other embodiments, the second ceramic filler component440 may include a particular content of amorphous material. For example,the second ceramic filler component 440 may include at least about 97%amorphous material, such as, at least about 98% or even at least about99%. It will be appreciated that the content of amorphous material maybe any value between, and including, any of the values noted above. Itwill be further appreciated that the content of amorphous material maybe within a range between, and including, any of the values noted above.

According to other embodiments, the second resin matrix component 430may include a particular material. For example, the second resin matrixcomponent 430 may include a perfluoropolymer. According to still otherembodiments, the second resin matrix component 430 may consist of aperfluoropolymer.

According to yet other embodiments, the perfluoropolymer of the secondresin matrix component 430 may include a copolymer oftetrafluoroethylene (TFE); a copolymer of hexafluoropropylene (HFP); aterpolymer of tetrafluoroethylene (TFE); or any combination thereof.According to other embodiments, the perfluoropolymer of the second resinmatrix component 430 may consist of a copolymer of tetrafluoroethylene(TFE); a copolymer of hexafluoropropylene (HFP); a terpolymer oftetrafluoroethylene (TFE); or any combination thereof.

According to yet other embodiments, the perfluoropolymer of the secondresin matrix component 430 may include polytetrafluoroethylene (PTFE),perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene(FEP), or any combination thereof. According to still other embodiments,the perfluoropolymer of the second resin matrix component 430 mayconsist of polytetrafluoroethylene (PTFE), perfluoroalkoxy polymer resin(PFA), fluorinated ethylene propylene (FEP), or any combination thereof.

According to yet other embodiments, the first filled polymer layer 404may include a particular content of the second resin matrix component430. For example, the content of the second resin matrix component 430may be at least about 30 vol. % for a total volume of the first filledpolymer layer 404, such as, at least about 31 vol. % or at least about32 vol. % or at least about 33 vol. % or at least about 34 vol. % or atleast about 35 vol. % or at least about 36 vol. % or at least about 37vol. % or at least about 38 vol. % or at least about 39 vol. % or atleast about 40 vol. % or at least about 41 vol. % or at least about 42vol. % or at least about 43 vol. % or at least about 44 vol. % or atleast about 45 vol. % or 46 vol. % or at least about 47 vol. % or atleast about 48 vol. % or at least about 49 vol. % or at least about 50vol. % or at least about 51 vol. % or at least about 52 vol. % or atleast about 53 vol. % or at least about 54 vol. % or even at least about55 vol. %. According to still other embodiments, the content of thefirst resin matrix component 410 is not greater than about 63 vol. % fora total volume of the first filled polymer layer 404 or not greater thanabout 62 vol. % or not greater than about 61 vol. % or not greater thanabout 60 vol. % or not greater than about 59 vol. % or not greater thanabout 58 vol. % or even not greater than about 57 vol. %. It will beappreciated that the content of the second resin matrix component 430may be any value between, and including, any of the minimum and maximumvalues noted above. It will be further appreciated that the content ofthe second resin matrix component 430 may be within a range between, andincluding, any of the minimum and maximum values noted above.

According to yet other embodiments, the second filled polymer layer 406may include a particular content of the perfluoropolymer. For example,the content of the perfluoropolymer may be at least about 45 vol. % fora total volume of the second filled polymer layer 406, such as, at leastabout 46 vol. % or at least about 47 vol. % or at least about 48 vol. %or at least about 49 vol. % or at least about 50 vol. % or at leastabout 51 vol. % or at least about 52 vol. % or at least about 53 vol. %or at least about 54 vol. % or even at least about 55 vol. %. Accordingto still other embodiments, the content of the perfluoropolymer may benot greater than about 63 vol. % for a total volume of the second filledpolymer layer 406, such as, not greater than about 62 vol. % or notgreater than about 61 vol. % or not greater than about 60 vol. % or notgreater than about 59 vol. % or not greater than about 58 vol. % or evennot greater than about 57 vol. %. It will be appreciated that thecontent of the perfluoropolymer may be any value between, and including,any of the minimum and maximum values noted above. It will be furtherappreciated that the content of the perfluoropolymer may be within arange between, and including, any of the minimum and maximum valuesnoted above.

According to still other embodiments, the dielectric substrate 405 mayinclude a particular porosity as measured using x-ray diffraction. Forexample, the porosity of the substrate 200 may be not greater than about10 vol. %, such as, not greater than about 9 vol. % or not greater thanabout 8 vol. % or not greater than about 7 vol. % or not greater thanabout 6 vol. % or even not greater than about 5 vol. %. It will beappreciated that the porosity of the dielectric substrate 405 may be anyvalue between, and including, any of the values noted above. It will befurther appreciated that the porosity of the dielectric substrate 405may be within a range between, and including, any of the values notedabove.

According to yet other embodiments, the dielectric substrate 405 mayhave a particular average thickness. For example, the average thicknessof the dielectric substrate 405 may be at least about 10 microns, suchas, at least about 15 microns or at least about 20 microns or at leastabout 25 microns or at least about 30 microns or at least about 35microns or at least about 40 microns or at least about 45 microns or atleast about 50 microns or at least about 55 microns or at least about 60microns or at least about 65 microns or at least about 70 microns oreven at least about 75 microns. According to yet other embodiments, theaverage thickness of the dielectric substrate 405 may be not greaterthan about 2000 microns, such as, not greater than about 1800 microns ornot greater than about 1600 microns or not greater than about 1400microns or not greater than about 1200 microns or not greater than about1000 microns or not greater than about 800 microns or not greater thanabout 600 microns or not greater than about 400 microns or not greaterthan about 200 microns or not greater than about 190 microns or notgreater than about 180 microns or not greater than about 170 microns ornot greater than about 160 microns or not greater than about 150 micronsor not greater than about 140 microns or not greater than about 120microns or even not greater than about 100 microns. It will beappreciated that the average thickness of the dielectric substrate 405may be any value between, and including, any of the minimum and maximumvalues noted above. It will be further appreciated that the averagethickness of the dielectric substrate 405 may be within a range between,and including, any of the minimum and maximum values noted above.

According to yet other embodiments, the dielectric substrate 405 mayhave a particular dissipation factor (Df) as measured in the rangebetween 5 GHz, 20% RH. For example, the dielectric substrate 405 mayhave a dissipation factor of not greater than about 0.005, such as, notgreater than about 0.004 or not greater than about 0.003 or not greaterthan about 0.002 or not greater than about 0.0019 or not greater thanabout 0.0018 or not greater than about 0.0017 or not greater than about0.0016 or not greater than about 0.0015 or not greater than about0.0014. It will be appreciated that the dissipation factor of thedielectric substrate 405 may be any value between, and including, any ofthe values noted above. It will be further appreciated that thedissipation factor of the dielectric substrate 405 may be within a rangebetween, and including, any of the values noted above.

According to yet other embodiments, the dielectric substrate 405 mayhave a particular dissipation factor (Df) as measured in the rangebetween 5 GHz, 80% RH. For example, the dielectric substrate 405 mayhave a dissipation factor of not greater than about 0.005, such as, notgreater than about 0.004 or not greater than about 0.003 or not greaterthan about 0.002 or not greater than about 0.0019 or not greater thanabout 0.0018 or not greater than about 0.0017 or not greater than about0.0016 or not greater than about 0.0015 or not greater than about0.0014. It will be appreciated that the dissipation factor of thedielectric substrate 405 may be any value between, and including, any ofthe values noted above. It will be further appreciated that thedissipation factor of the dielectric substrate 405 may be within a rangebetween, and including, any of the values noted above.

According to yet other embodiments, the dielectric substrate 405 mayhave a particular dissipation factor (Df) as measured in the rangebetween 10 GHz, 20% RH. For example, the dielectric substrate 405 mayhave a dissipation factor of not greater than about 0.005, such as, notgreater than about 0.004 or not greater than about 0.003 or not greaterthan about 0.002 or not greater than about 0.0019 or not greater thanabout 0.0018 or not greater than about 0.0017 or not greater than about0.0016 or not greater than about 0.0015 or not greater than about0.0014. It will be appreciated that the dissipation factor of thedielectric substrate 405 may be any value between, and including, any ofthe values noted above. It will be further appreciated that thedissipation factor of the dielectric substrate 405 may be within a rangebetween, and including, any of the values noted above.

According to yet other embodiments, the dielectric substrate 405 mayhave a particular dissipation factor (Df) as measured in the rangebetween 10 GHz, 80% RH. For example, the dielectric substrate 405 mayhave a dissipation factor of not greater than about 0.005, such as, notgreater than about 0.004 or not greater than about 0.003 or not greaterthan about 0.002 or not greater than about 0.0019 or not greater thanabout 0.0018 or not greater than about 0.0017 or not greater than about0.0016 or not greater than about 0.0015 or not greater than about0.0014. It will be appreciated that the dissipation factor of thedielectric substrate 405 may be any value between, and including, any ofthe values noted above. It will be further appreciated that thedissipation factor of the dielectric substrate 405 may be within a rangebetween, and including, any of the values noted above.

According to yet other embodiments, the dielectric substrate 405 mayhave a particular dissipation factor (Df) as measured in the rangebetween 28 GHz, 20% RH. For example, the dielectric substrate 405 mayhave a dissipation factor of not greater than about 0.005, such as, notgreater than about 0.004 or not greater than about 0.003 or not greaterthan about 0.002 or not greater than about 0.0019 or not greater thanabout 0.0018 or not greater than about 0.0017 or not greater than about0.0016 or not greater than about 0.0015 or not greater than about0.0014. It will be appreciated that the dissipation factor of thedielectric substrate 405 may be any value between, and including, any ofthe values noted above. It will be further appreciated that thedissipation factor of the dielectric substrate 405 may be within a rangebetween, and including, any of the values noted above.

According to yet other embodiments, the dielectric substrate 405 mayhave a particular dissipation factor (Df) as measured in the rangebetween 28 GHz, 80% RH. For example, the dielectric substrate 405 mayhave a dissipation factor of not greater than about 0.005, such as, notgreater than about 0.004 or not greater than about 0.003 or not greaterthan about 0.002 or not greater than about 0.0019 or not greater thanabout 0.0018 or not greater than about 0.0017 or not greater than about0.0016 or not greater than about 0.0015 or not greater than about0.0014. It will be appreciated that the dissipation factor of thedielectric substrate 405 may be any value between, and including, any ofthe values noted above. It will be further appreciated that thedissipation factor of the dielectric substrate 405 may be within a rangebetween, and including, any of the values noted above.

According to yet other embodiments, the dielectric substrate 405 mayhave a particular dissipation factor (Df) as measured in the rangebetween 39 GHz, 20% RH. For example, the dielectric substrate 405 mayhave a dissipation factor of not greater than about 0.005, such as, notgreater than about 0.004 or not greater than about 0.003 or not greaterthan about 0.002 or not greater than about 0.0019 or not greater thanabout 0.0018 or not greater than about 0.0017 or not greater than about0.0016 or not greater than about 0.0015 or not greater than about0.0014. It will be appreciated that the dissipation factor of thedielectric substrate 405 may be any value between, and including, any ofthe values noted above. It will be further appreciated that thedissipation factor of the dielectric substrate 405 may be within a rangebetween, and including, any of the values noted above.

According to yet other embodiments, the dielectric substrate 405 mayhave a particular dissipation factor (Df) as measured in the rangebetween 39 GHz, 80% RH. For example, the dielectric substrate 405 mayhave a dissipation factor of not greater than about 0.005, such as, notgreater than about 0.004 or not greater than about 0.003 or not greaterthan about 0.002 or not greater than about 0.0019 or not greater thanabout 0.0018 or not greater than about 0.0017 or not greater than about0.0016 or not greater than about 0.0015 or not greater than about0.0014. It will be appreciated that the dissipation factor of thedielectric substrate 405 may be any value between, and including, any ofthe values noted above. It will be further appreciated that thedissipation factor of the dielectric substrate 405 may be within a rangebetween, and including, any of the values noted above.

According to yet other embodiments, the dielectric substrate 405 mayhave a particular dissipation factor (Df) as measured in the rangebetween 76-81 GHz, 20% RH. For example, the dielectric substrate 405 mayhave a dissipation factor of not greater than about 0.005, such as, notgreater than about 0.004 or not greater than about 0.003 or not greaterthan about 0.002 or not greater than about 0.0019 or not greater thanabout 0.0018 or not greater than about 0.0017 or not greater than about0.0016 or not greater than about 0.0015 or not greater than about0.0014. It will be appreciated that the dissipation factor of thedielectric substrate 405 may be any value between, and including, any ofthe values noted above. It will be further appreciated that thedissipation factor of the dielectric substrate 405 may be within a rangebetween, and including, any of the values noted above.

According to yet other embodiments, the dielectric substrate 405 mayhave a particular dissipation factor (Df) as measured in the rangebetween 76-81 GHz, 80% RH. For example, the dielectric substrate 405 mayhave a dissipation factor of not greater than about 0.005, such as, notgreater than about 0.004 or not greater than about 0.003 or not greaterthan about 0.002 or not greater than about 0.0019 or not greater thanabout 0.0018 or not greater than about 0.0017 or not greater than about0.0016 or not greater than about 0.0015 or not greater than about0.0014. It will be appreciated that the dissipation factor of thedielectric substrate 405 may be any value between, and including, any ofthe values noted above. It will be further appreciated that thedissipation factor of the dielectric substrate 405 may be within a rangebetween, and including, any of the values noted above.

According to yet other embodiments, the dielectric substrate 405 mayhave a particular coefficient of thermal expansion as measured accordingto IPC-TM-650 2.4.24 Rev. C Glass Transition Temperature and Z-AxisThermal Expansion by TMA. For example, the dielectric substrate 405 mayhave a coefficient of thermal expansion of not greater than about 80ppm/° C.

Referring next to a method of forming a printed circuit board, FIG. 5includes a diagram showing a forming method 500 for forming a printedcircuit board according to embodiments described herein. According toparticular embodiments, the forming method 500 may include a first step510 of providing a copper foil layer, a second step 520 of forming adielectric substrate overlying the copper foil layer. According toparticular embodiments, forming the dielectric substrate may includecombining a first resin matrix precursor component and a first ceramicfiller precursor component to form a first forming mixture, and formingthe first forming mixture into a first filled polymer layer overlyingthe polyimide layer to form the dielectric substrate.

It will be appreciated that all descriptions, details andcharacteristics provided herein in reference to forming method 100and/or forming method 300 may further apply to or describe correspondaspects of forming method 500.

Referring now to embodiments of the printed circuit board formedaccording to forming method 500, FIG. 6a includes a diagram of a printedcircuit board 600. As shown in FIG. 6a , the printed circuit board 600may include a copper foil layer 603, and a dielectric substrate 605overlying a surface of the copper foil layer 603. As further shown inFIG. 6a , the dielectric substrate 605 may include a polyimide layer 602and a first filled polymer layer 604 overlying the polyimide layer 602.As shown in FIG. 6a , the first filled polymer layer 604 may include afirst resin matrix component 610 and a first ceramic filler component620.

Again, it will be appreciated that all descriptions provided herein inreference to dielectric substrate 200 (405) and/or copper-clad laminate400 may further apply to correcting aspects of the printed circuit board600, including all component of printed circuit board 600.

According to other embodiments of a printed circuit board formedaccording to forming method 500, FIG. 6b includes a diagram of a printedcircuit board 601. As shown in FIG. 6b , the printed circuit board 601may include a copper foil layer 603, and a dielectric substrate 605overlying a surface of the copper foil layer 603. As shown in FIG. 6b ,the dielectric substrate 605 may include the polyimide layer 602, thefirst filled polymer layer 604 overlying the polyimide layer 602, and asecond filled polymer layer 606 underlying the polyimide layer 602. Asshown in FIG. 6b , the second filled polymer layer 606 may include asecond resin matrix component 630 and a second ceramic filler component640.

Again, it will be appreciated that all descriptions provided herein inreference to dielectric substrate 200 (405) and/or copper-clad laminate400 may further apply to correcting aspects of the printed circuit board601, including all components of printed circuit board 601.

Many different aspects and embodiments are possible. Some of thoseaspects and embodiments are described herein. After reading thisspecification, skilled artisans will appreciate that those aspects andembodiments are only illustrative and do not limit the scope of thepresent invention. Embodiments may be in accordance with any one or moreof the embodiments as listed below.

Embodiment 1. A dielectric substrate comprising: a polyimide layer and afirst filled polymer layer overlying the polyimide layer, wherein thefirst filled polymer layer comprises a first resin matrix component; anda first ceramic filler component, wherein the first ceramic fillercomponent comprises a first filler material, and wherein the firstfiller material further comprises a mean particle size of at not greaterthan about 10 microns.

Embodiment 2. The dielectric substrate of embodiment 1, wherein aparticle size distribution of the silica filler material of the firstceramic filler component comprises: a D₁₀ of at least about 0.2 micronsand not greater than about 1.6, a D₅₀ of at least about 0.5 microns andnot greater than about 2.7 microns, and a D₉₀ of at least about 0.8microns and not greater than about 4.7 microns.

Embodiment 3. The dielectric substrate of embodiment 1, wherein thesilica filler material of the first ceramic filler component comprises aparticle size distribution span (PSDS) of not greater than about 8,where PSDS is equal to (D₉₀-D₁₀)/D₅₀, where D₉₀ is equal to a D₉₀particle size distribution measurement of the silica filler material,D₁₀ is equal to a D₁₀ particle size distribution measurement of thefirst filler material, and D₅₀ is equal to a D₅₀ particle sizedistribution measurement of the first filler material.

Embodiment 4. The dielectric substrate of embodiment 1, wherein thefirst filler material further comprises an average surface area of notgreater than about 10 m²/g.

Embodiment 5. The dielectric substrate of embodiment 1, wherein thefirst filler material comprises a silica-based compound.

Embodiment 6. The dielectric substrate of embodiment 1, wherein thefirst filler material comprises silica.

Embodiment 7. The dielectric substrate of embodiment 1, wherein thefirst resin matrix component comprises a perfluoropolymer.

Embodiment 8. The dielectric substrate of embodiment 7, wherein theperfluoropolymer comprises a copolymer of tetrafluoroethylene (TFE); acopolymer of hexafluoropropylene (HFP); a terpolymer oftetrafluoroethylene (TFE); or any combination thereof.

Embodiment 9. The dielectric substrate of embodiment 7, wherein theperfluoropolymer comprises polytetrafluoroethylene (PTFE),perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene(FEP), or any combination thereof.

Embodiment 10. The dielectric substrate of embodiment 7, wherein theperfluoropolymer consists of polytetrafluoroethylene (PTFE),perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene(FEP), or any combination thereof.

Embodiment 11. The dielectric substrate of embodiment 1, wherein thecontent of the first resin matrix component is at least about 45 vol. %for a total volume of the first filled polymer layer.

Embodiment 12. The dielectric substrate of embodiment 1, wherein thecontent of the first resin matrix component is not greater than about 63vol. % for a total volume of the first filled polymer layer.

Embodiment 13. The dielectric substrate of embodiment 7, wherein thecontent of the perfluoropolymer is at least about 45 vol. % for a totalvolume of the first filled polymer layer.

Embodiment 14. The dielectric substrate of embodiment 7, wherein thecontent of the perfluoropolymer is not greater than about 63 vol. % fora total volume of the first filled polymer layer.

Embodiment 15. The dielectric substrate of embodiment 1, wherein thecontent of the first ceramic filler component is at least about 30 vol.% for a total volume of the first filled polymer layer.

Embodiment 16. The dielectric substrate of embodiment 1, wherein thecontent of the first ceramic filler component is not greater than about57 vol. % for a total volume of the first filled polymer layer.

Embodiment 17. The dielectric substrate of embodiment 1, wherein thecontent of the first filler material is at least about 80 vol. % for atotal volume of the first ceramic filler component.

Embodiment 18. The dielectric substrate of embodiment 1, wherein thecontent of the first filler material is not greater than about 100 vol.% for a total volume of the first ceramic filler component.

Embodiment 19. The dielectric substrate of embodiment 1, wherein thefirst ceramic filler component further comprises a second fillermaterial.

Embodiment 20. The dielectric substrate of embodiment 19, wherein thesecond filler material of the first ceramic filler component comprises ahigh dielectric constant ceramic material.

Embodiment 21. The dielectric substrate of embodiment 20, wherein thehigh dielectric constant ceramic material has a dielectric constant ofat least about 14.

Embodiment 22. The dielectric substrate of embodiment 20, wherein thesecond ceramic filler component further comprises TiO₂, SrTiO₃, ZrTi₂O₆,MgTiO₃, CaTiO₃, BaTiO₄ or any combination thereof.

Embodiment 23. The dielectric substrate of embodiment 19, wherein thecontent of the second filler material of the first ceramic fillercomponent is at least about 1 vol. % for a total volume of the firstceramic filler component.

Embodiment 24. The dielectric substrate of embodiment 19, wherein thecontent of the second filler material of the first ceramic fillercomponent is not greater than about 20 vol. % for a total volume of thefirst ceramic filler component.

Embodiment 25. The dielectric substrate of embodiment 22, wherein thecontent of the TiO₂ filler material in the first ceramic fillercomponent is at least about 1 vol. % for a total volume of the firstceramic filler component.

Embodiment 26. The dielectric substrate of embodiment 22, wherein thecontent of the TiO₂ filler material in the first ceramic fillercomponent is not greater than about 20 vol. % for a total volume of thefirst ceramic filler component.

Embodiment 27. The dielectric substrate of embodiment 1, wherein thefirst ceramic filler component is at least about 97%.

Embodiment 28. The dielectric substrate of embodiment 1, wherein thedielectric substrate further comprises a second filled polymer layerunderlying the polyimide layer, wherein the second filled polymer layercomprises a second resin matrix component; and a second ceramic fillercomponent, wherein the second ceramic filler component comprises asilica filler material, and wherein the first filler material furthercomprises a mean particle size of at not greater than about 10 microns.

Embodiment 29. The dielectric substrate of embodiment 28, wherein aparticle size distribution of the silica filler material of the secondceramic filler component comprises: a D₁₀ of at least about 0.2 micronsand not greater than about 1.6, a D₅₀ of at least about 0.5 microns andnot greater than about 2.7 microns, and a D₉₀ of at least about 0.8microns and not greater than about 4.7 microns.

Embodiment 30. The dielectric substrate of embodiment 28, wherein thesilica filler material of the second ceramic filler component comprisesa particle size distribution span (PSDS) of not greater than about 8,where PSDS is equal to (D₉₀-D₁₀)/D₅₀, where D₉₀ is equal to a D₉₀particle size distribution measurement of the silica filler material,D₁₀ is equal to a D₁₀ particle size distribution measurement of thefirst filler material, and D₅₀ is equal to a D₅₀ particle sizedistribution measurement of the first filler material.

Embodiment 31. The dielectric substrate of embodiment 28, wherein thefirst filler material further comprises an average surface area of notgreater than about 10 m²/g.

Embodiment 32. The dielectric substrate of embodiment 28, wherein thesecond filler material comprises a silica-based compound.

Embodiment 33. The dielectric substrate of embodiment 28, wherein thesecond filler material comprises silica.

Embodiment 34. The dielectric substrate of embodiment 28, wherein thesecond resin matrix comprises a perfluoropolymer.

Embodiment 35. The dielectric substrate of embodiment 34, wherein theperfluoropolymer comprises a copolymer of tetrafluoroethylene (TFE); acopolymer of hexafluoropropylene (HFP); a terpolymer oftetrafluoroethylene (TFE); or any combination thereof.

Embodiment 36. The dielectric substrate of embodiment 34, wherein theperfluoropolymer comprises polytetrafluoroethylene (PTFE),perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene(FEP), or any combination thereof.

Embodiment 37. The dielectric substrate of embodiment 34, wherein theperfluoropolymer consists of polytetrafluoroethylene (PTFE),perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene(FEP), or any combination thereof.

Embodiment 38. The dielectric substrate of embodiment 28, wherein thecontent of the second resin matrix component is at least about 45 vol. %for a total volume of the second filled polymer layer.

Embodiment 39. The dielectric substrate of embodiment 28, wherein thecontent of the second resin matrix component is not greater than about63 vol. % for a total volume of the second filled polymer layer.

Embodiment 40. The dielectric substrate of embodiment 28, wherein thecontent of the perfluoropolymer is at least about 45 vol. % for a totalvolume of the second filled polymer layer.

Embodiment 41. The dielectric substrate of embodiment 28, wherein thecontent of the perfluoropolymer is not greater than about 63 vol. % fora total volume of the second filled polymer layer.

Embodiment 42. The dielectric substrate of embodiment 28, wherein thecontent of the second ceramic filler component is at least about 30 vol.% for a total volume of the second filled polymer layer.

Embodiment 43. The dielectric substrate of embodiment 28, wherein thecontent of the second ceramic filler component is not greater than about57 vol. % for a total volume of the second filled polymer layer.

Embodiment 44. The dielectric substrate of embodiment 28, wherein thecontent of the second filler material is at least about 80 vol. % for atotal volume of the second ceramic filler component.

Embodiment 45. The dielectric substrate of embodiment 28, wherein thecontent of the second filler material is not greater than about 100 vol.% for a total volume of the second ceramic filler component.

Embodiment 46. The dielectric substrate of embodiment 28, wherein thesecond ceramic filler component further comprises a TiO₂ fillermaterial.

Embodiment 47. The dielectric substrate of embodiment 46, wherein thecontent of the TiO₂ filler material is at least about 1 vol. % for atotal volume of the second ceramic filler component.

Embodiment 48. The dielectric substrate of embodiment 46, wherein thecontent of the TiO₂ filler material is not greater than about 20 vol. %for a total volume of the second ceramic filler component.

Embodiment 49. The dielectric substrate of embodiment 28, wherein thesecond ceramic filler component is at least about 97% amorphous.

Embodiment 50. The dielectric substrate of any one of embodiments 1 and28, wherein the dielectric substrate comprises a porosity of not greaterthan about 10 vol. %.

Embodiment 51. The dielectric substrate of any one of embodiments 1 and28, wherein the dielectric substrate comprises an average thickness ofat least about 10 microns.

Embodiment 52. The dielectric substrate of any one of embodiments 1 and28, wherein the dielectric substrate comprises an average thickness ofnot greater than about 200 microns.

Embodiment 53. The dielectric substrate of any one of embodiments 1 and28, wherein the dielectric substrate comprises a dissipation factor (5GHz, 20% RH) of not greater than about 0.005.

Embodiment 54. The dielectric substrate of any one of embodiments 1 and28, wherein the dielectric substrate comprises a dissipation factor (5GHz, 20% RH) of not greater than about 0.0014.

Embodiment 55. The dielectric substrate of any one of embodiments 1 and28, wherein the dielectric substrate comprises a coefficient of thermalexpansion (x/y axe) of not greater than about 80 ppm/° C.

Embodiment 56. The dielectric substrate of any one of embodiments 1 and28, wherein the dielectric substrate comprises a peel strength betweenthe first filled polymer layer and the polyimide layer of at least about5 lb/in.

Embodiment 57. The dielectric substrate of any one of embodiments 1 and28, wherein the dielectric substrate comprises a peel strength betweenthe second filled polymer layer and the polyimide layer of at leastabout 5 lb/in.

Embodiment 58. The dielectric substrate of any one of embodiments 1 and28, wherein the dielectric substrate comprises a moisture absorption ofnot greater than about 1.2%.

Embodiment 59. A copper-clad laminate comprising a copper foil layer,and a dielectric substrate overlying the copper foil layer, wherein thedielectric substrate comprises: a polyimide layer and a first filledpolymer layer overlying the polyimide layer, wherein the first filledpolymer layer comprises a first resin matrix component; and a firstceramic filler component, wherein the first ceramic filler componentcomprises a first filler material, and wherein the first filler materialfurther comprises a mean particle size of at not greater than about 10microns.

Embodiment 60. The copper-clad laminate of embodiment 59, wherein aparticle size distribution of the silica filler material of the firstceramic filler component comprises: a D₁₀ of at least about 0.2 micronsand not greater than about 1.6, a D₅₀ of at least about 0.5 microns andnot greater than about 2.7 microns, and a D₉₀ of at least about 0.8microns and not greater than about 4.7 microns.

Embodiment 61. The copper-clad laminate of embodiment 59, wherein thesilica filler material of the first ceramic filler component comprises aparticle size distribution span (PSDS) of not greater than about 8,where PSDS is equal to (D₉₀-D₁₀)/D₅₀, where D₉₀ is equal to a D₉₀particle size distribution measurement of the silica filler material,D₁₀ is equal to a D₁₀ particle size distribution measurement of thefirst filler material, and D₅₀ is equal to a D₅₀ particle sizedistribution measurement of the first filler material.

Embodiment 62. The copper-clad laminate of embodiment 59, wherein thefirst filler material further comprises an average surface area of notgreater than about 10 m²/g.

Embodiment 63. The copper-clad laminate of embodiment 59, wherein thefirst filler material comprises a silica-based compound.

Embodiment 64. The copper-clad laminate of embodiment 59, wherein thefirst filler material comprises silica.

Embodiment 65. The copper-clad laminate of embodiment 59, wherein thefirst resin matrix component comprises a perfluoropolymer.

Embodiment 66. The copper-clad laminate of embodiment 65, wherein theperfluoropolymer comprises a copolymer of tetrafluoroethylene (TFE); acopolymer of hexafluoropropylene (HFP); a terpolymer oftetrafluoroethylene (TFE); or any combination thereof.

Embodiment 67. The copper-clad laminate of embodiment 65, wherein theperfluoropolymer comprises polytetrafluoroethylene (PTFE),perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene(FEP), or any combination thereof.

Embodiment 68. The copper-clad laminate of embodiment 65, wherein theperfluoropolymer consists of polytetrafluoroethylene (PTFE),perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene(FEP), or any combination thereof.

Embodiment 69. The copper-clad laminate of embodiment 59, wherein thecontent of the first resin matrix component is at least about 45 vol. %for a total volume of the first filled polymer layer.

Embodiment 70. The copper-clad laminate of embodiment 59, wherein thecontent of the first resin matrix component is not greater than about 63vol. % for a total volume of the first filled polymer layer.

Embodiment 71. The copper-clad laminate of embodiment 65, wherein thecontent of the perfluoropolymer is at least about 45 vol. % for a totalvolume of the first filled polymer layer.

Embodiment 72. The copper-clad laminate of embodiment 65, wherein thecontent of the perfluoropolymer is not greater than about 63 vol. % fora total volume of the first filled polymer layer.

Embodiment 73. The copper-clad laminate of embodiment 59, wherein thecontent of the first ceramic filler component is at least about 50 vol.% for a total volume of the first filled polymer layer.

Embodiment 74. The copper-clad laminate of embodiment 59, wherein thecontent of the first ceramic filler component is not greater than about57 vol. % for a total volume of the first filled polymer layer.

Embodiment 75. The copper-clad laminate of embodiment 59, wherein thecontent of the first filler material is at least about 80 vol. % for atotal volume of the first ceramic filler component.

Embodiment 76. The copper-clad laminate of embodiment 59, wherein thecontent of the first filler material is not greater than about 100 vol.% for a total volume of the first ceramic filler component.

Embodiment 77. The copper-clad laminate of embodiment 59, wherein thefirst ceramic filler component further comprises a second fillermaterial.

Embodiment 78. The copper-clad laminate of embodiment 77, wherein thesecond filler material of the first ceramic filler component comprises ahigh dielectric constant ceramic material.

Embodiment 79. The copper-clad laminate of embodiment 78, wherein thehigh dielectric constant ceramic material has a dielectric constant ofat least about 14.

Embodiment 80. The copper-clad laminate of embodiment 78, wherein thefirst ceramic filler component further comprises TiO₂, SrTiO₃, ZrTi₂O₆,MgTiO₃, CaTiO₃, BaTiO₄ or any combination thereof.

Embodiment 81. The copper-clad laminate of embodiment 77, wherein thecontent of the second filler material of the first ceramic fillercomponent is at least about 1 vol. % for a total volume of the firstceramic filler component.

Embodiment 82. The copper-clad laminate of embodiment 77, wherein thecontent of the second filler material of the first ceramic fillercomponent is not greater than about 20 vol. % for a total volume of thefirst ceramic filler component.

Embodiment 83. The copper-clad laminate of embodiment 80, wherein thecontent of the TiO₂ filler material in the first ceramic fillercomponent is at least about 1 vol. % for a total volume of the firstceramic filler component.

Embodiment 84. The copper-clad laminate of embodiment 80, wherein thecontent of the TiO₂ filler material in the first ceramic fillercomponent is not greater than about 20 vol. % for a total volume of thefirst ceramic filler component.

Embodiment 85. The copper-clad laminate of embodiment 59, wherein thefirst ceramic filler component is at least about 97% amorphous.

Embodiment 86. The copper-clad laminate of embodiment 59, wherein thedielectric substrate further comprises a second filled polymer layerunderlying the polyimide layer, wherein the second filled polymer layercomprises a second resin matrix component; and a second ceramic fillercomponent, wherein the second ceramic filler component comprises asilica filler material, and wherein the first filler material furthercomprises a mean particle size of at not greater than about 10 microns.

Embodiment 87. The copper-clad laminate of embodiment 86, wherein aparticle size distribution of the silica filler material of the secondceramic filler component comprises: a D₁₀ of at least about 0.2 micronsand not greater than about 1.6, a D₅₀ of at least about 0.5 microns andnot greater than about 2.7 microns, and a D₉₀ of at least about 0.8microns and not greater than about 4.7 microns.

Embodiment 88. The copper-clad laminate of embodiment 86, wherein thesecond filler material of the second ceramic filler component comprisesa particle size distribution span (PSDS) of not greater than about 8,where PSDS is equal to (D₉₀−D₁₀)/D₅₀, where D₉₀ is equal to a D₉₀particle size distribution measurement of the silica filler material,D₁₀ is equal to a D₁₀ particle size distribution measurement of thefirst filler material, and D₅₀ is equal to a D₅₀ particle sizedistribution measurement of the first filler material.

Embodiment 89. The copper-clad laminate of embodiment 86, wherein thesecond filler material further comprises an average surface area of notgreater than about 10 m²/g.

Embodiment 90. The copper-clad laminate of embodiment 86, wherein thesecond filler material comprises a silica-based compound.

Embodiment 91. The copper-clad laminate of embodiment 86, wherein thesecond filler material comprises silica.

Embodiment 92. The copper-clad laminate of embodiment 86, wherein thesecond resin matrix comprises a perfluoropolymer.

Embodiment 93. The copper-clad laminate of embodiment 92, wherein theperfluoropolymer comprises a copolymer of tetrafluoroethylene (TFE); acopolymer of hexafluoropropylene (HFP); a terpolymer oftetrafluoroethylene (TFE); or any combination thereof.

Embodiment 94. The copper-clad laminate of embodiment 92, wherein theperfluoropolymer comprises polytetrafluoroethylene (PTFE),perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene(FEP), or any combination thereof.

Embodiment 95. The copper-clad laminate of embodiment 92, wherein theperfluoropolymer consists of polytetrafluoroethylene (PTFE),perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene(FEP), or any combination thereof.

Embodiment 96. The copper-clad laminate of embodiment 86, wherein thecontent of the second resin matrix component is at least about 45 vol. %for a total volume of the second filled polymer layer.

Embodiment 97. The copper-clad laminate of embodiment 86, wherein thecontent of the second resin matrix component is not greater than about63 vol. % for a total volume of the second filled polymer layer.

Embodiment 98. The copper-clad laminate of embodiment 86, wherein thecontent of the perfluoropolymer is at least about 45 vol. % for a totalvolume of the second filled polymer layer.

Embodiment 99. The copper-clad laminate of embodiment 86, wherein thecontent of the perfluoropolymer is not greater than about 63 vol. % fora total volume of the second filled polymer layer.

Embodiment 100. The copper-clad laminate of embodiment 86, wherein thecontent of the second ceramic filler component is at least about 50 vol.% for a total volume of the second filled polymer layer.

Embodiment 101. The copper-clad laminate of embodiment 86, wherein thecontent of the second ceramic filler component is not greater than about57 vol. % for a total volume of the second filled polymer layer.

Embodiment 102. The copper-clad laminate of embodiment 86, wherein thecontent of the second filler material is at least about 80 vol. % for atotal volume of the second ceramic filler component.

Embodiment 103. The copper-clad laminate of embodiment 86, wherein thecontent of the second filler material is not greater than about 100 vol.% for a total volume of the second ceramic filler component.

Embodiment 104. The copper-clad laminate of embodiment 86, wherein thesecond ceramic filler component further comprises a TiO₂ fillermaterial.

Embodiment 105. The copper-clad laminate of embodiment 104, wherein thecontent of the TiO₂ filler material is at least about 1 vol. % for atotal volume of the second ceramic filler component.

Embodiment 106. The copper-clad laminate of embodiment 104, wherein thecontent of the TiO₂ filler material is not greater than about 20 vol. %for a total volume of the second ceramic filler component.

Embodiment 107. The copper-clad laminate of embodiment 86, wherein thesecond ceramic filler component is at least about 97% amorphous.

Embodiment 108. The copper-clad laminate of any one of embodiments 59and 86, wherein the dielectric substrate comprises a porosity of notgreater than about 10 vol. %.

Embodiment 109. The copper-clad laminate of any one of embodiments 59and 86, wherein the dielectric substrate comprises an average thicknessof at least about 10 microns.

Embodiment 110. The copper-clad laminate of any one of embodiments 59and 86, wherein the dielectric substrate comprises an average thicknessof not greater than about 200 microns.

Embodiment 111. The copper-clad laminate of any one of embodiments 59and 86, wherein the dielectric substrate comprises a dissipation factor(5 GHz, 20% RH) of not greater than about 0.005.

Embodiment 112. The copper-clad laminate of any one of embodiments 59and 86, wherein the dielectric substrate comprises a dissipation factor(5 GHz, 20% RH) of not greater than about 0.0014.

Embodiment 113. The copper-clad laminate of any one of embodiments 59and 86, wherein the dielectric substrate comprises a coefficient ofthermal expansion (x/y axe) of not greater than about 80 ppm/° C.

Embodiment 114. The copper-clad laminate of any one of embodiments 59and 86, wherein the dielectric substrate comprises a peel strengthbetween the first filled polymer layer and the polyimide layer of atleast about 5 lb/in.

Embodiment 115. The copper-clad laminate of any one of embodiments 59and 86, wherein the dielectric substrate comprises a peel strengthbetween the second filled polymer layer and the polyimide layer of atleast about 5 lb/in.

Embodiment 116. The copper-clad laminate of any one of embodiments 59and 86, wherein the copper-clad laminate comprises a peel strengthbetween the copper foil layer and the dielectric substrate of at leastabout 6 lb/in.

Embodiment 117. The copper-clad laminate of any one of embodiments 59and 86, wherein the dielectric substrate comprises a tensile strength ofat least about 60 MPa.

Embodiment 118. The copper-clad laminate of any one of embodiments 59and 86, wherein the dielectric substrate comprises a modulus of at leastabout 1.3 GPa.

Embodiment 119. The copper-clad laminate of any one of embodiments 59and 86, wherein the dielectric substrate comprises a moisture absorptionof not greater than about 1.2%.

Embodiment 120. The copper-clad laminate of any one of embodiments 59and 86, wherein the copper-clad laminate comprises a porosity of notgreater than about 10 vol. %.

Embodiment 121. A printed circuit board comprising a copper-cladlaminate, wherein the copper-clad laminate comprises: a copper foillayer, and a dielectric substrate overlying the copper foil layer,wherein the dielectric substrate comprises: a polyimide layer and afirst filled polymer layer overlying the polyimide layer, wherein thefirst filled polymer layer comprises a first resin matrix component; anda first ceramic filler component, wherein the first ceramic fillercomponent comprises a first filler material, and wherein the firstfiller material further comprises a mean particle size of at not greaterthan about 10 microns.

Embodiment 122. The printed circuit board of embodiment 121, wherein aparticle size distribution of the silica filler material of the firstceramic filler component comprises: a D₁₀ of at least about 0.2 micronsand not greater than about 1.6, a D₅₀ of at least about 0.5 microns andnot greater than about 2.7 microns, and a D₉₀ of at least about 0.8microns and not greater than about 4.7 microns.

Embodiment 123. The printed circuit board of embodiment 121, wherein thesilica filler material of the first ceramic filler component comprises aparticle size distribution span (PSDS) of not greater than about 8,where PSDS is equal to (D₉₀-D₁₀)/D₅₀, where D₉₀ is equal to a D₉₀particle size distribution measurement of the silica filler material,D₁₀ is equal to a D₁₀ particle size distribution measurement of thefirst filler material, and D₅₀ is equal to a D₅₀ particle sizedistribution measurement of the first filler material.

Embodiment 124. The printed circuit board of embodiment 121, wherein thefirst filler material further comprises an average surface area of notgreater than about 10 m²/g.

Embodiment 125. The printed circuit board of embodiment 121, wherein thefirst filler material comprises a silica-based compound.

Embodiment 126. The printed circuit board of embodiment 121, wherein thefirst filler material comprises silica.

Embodiment 127. The printed circuit board of embodiment 121, wherein thefirst resin matrix component comprises a perfluoropolymer.

Embodiment 128. The printed circuit board of embodiment 127, wherein theperfluoropolymer comprises a copolymer of tetrafluoroethylene (TFE); acopolymer of hexafluoropropylene (HFP); a terpolymer oftetrafluoroethylene (TFE); or any combination thereof.

Embodiment 129. The printed circuit board of embodiment 127, wherein theperfluoropolymer comprises polytetrafluoroethylene (PTFE),perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene(FEP), or any combination thereof.

Embodiment 130. The printed circuit board of embodiment 127, wherein theperfluoropolymer consists of polytetrafluoroethylene (PTFE),perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene(FEP), or any combination thereof.

Embodiment 131. The printed circuit board of embodiment 121, wherein thecontent of the first resin matrix component is at least about 45 vol. %for a total volume of the dielectric substrate.

Embodiment 132. The printed circuit board of embodiment 121, wherein thecontent of the first resin matrix component is not greater than about 63vol. % for a total volume of the first filled polymer layer.

Embodiment 133. The printed circuit board of embodiment 127, wherein thecontent of the perfluoropolymer is at least about 45 vol. % for a totalvolume of the first filled polymer layer.

Embodiment 134. The printed circuit board of embodiment 127, wherein thecontent of the perfluoropolymer is not greater than about 63 vol. % fora total volume of the first filled polymer layer.

Embodiment 135. The printed circuit board of embodiment 121, wherein thecontent of the first ceramic filler component is at least about 30 vol.% for a total volume of the first filled polymer layer.

Embodiment 136. The printed circuit board of embodiment 121, wherein thecontent of the first ceramic filler component is not greater than about57 vol. % for a total volume of the first filled polymer layer.

Embodiment 137. The printed circuit board of embodiment 121, wherein thecontent of the first filler material is at least about 80 vol. % for atotal volume of the first ceramic filler component.

Embodiment 138. The printed circuit board of embodiment 121, wherein thecontent of the first filler material is not greater than about 100 vol.% for a total volume of the first ceramic filler component.

Embodiment 139. The printed circuit board of embodiment 121, wherein thefirst ceramic filler component further comprises a second fillermaterial.

Embodiment 140. The printed circuit board of embodiment 139, wherein thesecond filler material of the first ceramic filler component comprises ahigh dielectric constant ceramic material.

Embodiment 141. The printed circuit board of embodiment 140, wherein thehigh dielectric constant ceramic material has a dielectric constant ofat least about 14.

Embodiment 142. The printed circuit board of embodiment 140, wherein thefirst ceramic filler component further comprises TiO₂, SrTiO₃, ZrTi₂O₆,MgTiO₃, CaTiO₃, BaTiO₄ or any combination thereof.

Embodiment 143. The printed circuit board of embodiment 139, wherein thecontent of the second filler material of the first ceramic fillercomponent is at least about 1 vol. % for a total volume of the firstceramic filler component.

Embodiment 144. The printed circuit board of embodiment 139, wherein thecontent of the second filler material of the first ceramic fillercomponent is not greater than about 20 vol. % for a total volume of thefirst ceramic filler component.

Embodiment 145. The printed circuit board of embodiment 142, wherein thecontent of the TiO₂ filler material in the first ceramic fillercomponent is at least about 1 vol. % for a total volume of the firstceramic filler component.

Embodiment 146. The printed circuit board of embodiment 142, wherein thecontent of the TiO₂ filler material in the first ceramic fillercomponent is not greater than about 20 vol. % for a total volume of thefirst ceramic filler component.

Embodiment 147. The printed circuit board of embodiment 121, wherein thefirst ceramic filler component is at least about 97% amorphous.

Embodiment 148. The printed circuit board of embodiment 121, wherein thedielectric substrate further comprises a second filled polymer layerunderlying the polyimide layer, wherein the second filled polymer layercomprises a second resin matrix component; and a second ceramic fillercomponent, wherein the second ceramic filler component comprises asilica filler material, and wherein the first filler material furthercomprises a mean particle size of at not greater than about 10 microns.

Embodiment 149. The printed circuit board of embodiment 148, wherein aparticle size distribution of the silica filler material of the secondceramic filler component comprises: a D₁₀ of at least about 0.2 micronsand not greater than about 1.6, a D₅₀ of at least about 0.5 microns andnot greater than about 2.7 microns, and a D₉₀ of at least about 0.8microns and not greater than about 4.7 microns.

Embodiment 150. The printed circuit board of embodiment 148, wherein thesecond filler material of the second ceramic filler component comprisesa particle size distribution span (PSDS) of not greater than about 8,where PSDS is equal to (D₉₀−D₁₀)/D₅₀, where D₉₀ is equal to a D₉₀particle size distribution measurement of the silica filler material,D₁₀ is equal to a D₁₀ particle size distribution measurement of thefirst filler material, and D₅₀ is equal to a D₅₀ particle sizedistribution measurement of the first filler material.

Embodiment 151. The printed circuit board of embodiment 148, wherein thesecond filler material further comprises an average surface area of notgreater than about 10 m²/g.

Embodiment 152. The printed circuit board of embodiment 148, wherein thesecond filler material comprises a silica-based compound.

Embodiment 153. The printed circuit board of embodiment 148, wherein thesecond filler material comprises silica.

Embodiment 154. The printed circuit board of embodiment 148, wherein thesecond resin matrix comprises a perfluoropolymer.

Embodiment 155. The printed circuit board of embodiment 154, wherein theperfluoropolymer comprises a copolymer of tetrafluoroethylene (TFE); acopolymer of hexafluoropropylene (HFP); a terpolymer oftetrafluoroethylene (TFE); or any combination thereof.

Embodiment 156. The printed circuit board of embodiment 154, wherein theperfluoropolymer comprises polytetrafluoroethylene (PTFE),perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene(FEP), or any combination thereof.

Embodiment 157. The printed circuit board of embodiment 154, wherein theperfluoropolymer consists of polytetrafluoroethylene (PTFE),perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene(FEP), or any combination thereof.

Embodiment 158. The printed circuit board of embodiment 148, wherein thecontent of the second resin matrix component is at least about 45 vol. %for a total volume of the second filled polymer layer.

Embodiment 159. The printed circuit board of embodiment 148, wherein thecontent of the second resin matrix component is not greater than about63 vol. % for a total volume of the second filled polymer layer.

Embodiment 160. The printed circuit board of embodiment 148, wherein thecontent of the perfluoropolymer is at least about 45 vol. % for a totalvolume of the second filled polymer layer.

Embodiment 161. The printed circuit board of embodiment 148, wherein thecontent of the perfluoropolymer is not greater than about 63 vol. % fora total volume of the second filled polymer layer.

Embodiment 162. The printed circuit board of embodiment 148, wherein thecontent of the second ceramic filler component is at least about 30 vol.% for a total volume of the second filled polymer layer.

Embodiment 163. The printed circuit board of embodiment 148, wherein thecontent of the second ceramic filler component is not greater than about57 vol. % for a total volume of the second filled polymer layer.

Embodiment 164. The printed circuit board of embodiment 148, wherein thecontent of the second filler material is at least about 80 vol. % for atotal volume of the second ceramic filler component.

Embodiment 165. The printed circuit board of embodiment 148, wherein thecontent of the second filler material is not greater than about 100 vol.% for a total volume of the second ceramic filler component.

Embodiment 166. The printed circuit board of embodiment 148, wherein thesecond ceramic filler component further comprises a TiO₂ fillermaterial.

Embodiment 167. The printed circuit board of embodiment 166, wherein thecontent of the TiO₂ filler material is at least about 1 vol. % for atotal volume of the second ceramic filler component.

Embodiment 168. The printed circuit board of embodiment 166, wherein thecontent of the TiO₂ filler material is not greater than about 20 vol. %for a total volume of the second ceramic filler component.

Embodiment 169. The printed circuit board of embodiment 148, wherein thesecond ceramic filler component is at least about 97% amorphous.

Embodiment 170. The printed circuit board of any one of embodiments 121and 148, wherein the dielectric substrate comprises a porosity of notgreater than about 10 vol. %.

Embodiment 171. The printed circuit board of any one of embodiments 121and 148, wherein the dielectric substrate comprises an average thicknessof at least about 10 microns.

Embodiment 172. The printed circuit board of any one of embodiments 121and 148, wherein the dielectric substrate comprises an average thicknessof not greater than about 200 microns.

Embodiment 173. The printed circuit board of any one of embodiments 121and 148, wherein the dielectric substrate comprises a dissipation factor(5 GHz, 20% RH) of not greater than about 0.005.

Embodiment 174. The printed circuit board of any one of embodiments 121and 148, wherein the dielectric substrate comprises a dissipation factor(5 GHz, 20% RH) of not greater than about 0.0014.

Embodiment 175. The printed circuit board of any one of embodiments 121and 148, wherein the dielectric substrate comprises a coefficient ofthermal expansion (x/y axe) of not greater than about 80 ppm/° C.

Embodiment 176. The printed circuit board of any one of embodiments 121and 148, wherein the dielectric substrate comprises a peel strengthbetween the first filled polymer layer and the polyimide layer of atleast about 5 lb/in.

Embodiment 177. The printed circuit board of any one of embodiments 121and 148, wherein the dielectric substrate comprises a peel strengthbetween the second filled polymer layer and the polyimide layer of atleast about 5 lb/in.

Embodiment 178. The printed circuit board of any one of embodiments 121and 148, wherein the printed circuit board comprises a peel strengthbetween the copper foil layer and the dielectric substrate of at leastabout 5 lb/in.

Embodiment 179. The printed circuit board of any one of embodiments 121and 148, wherein the dielectric substrate comprises a tensile strengthof at least about 60 MPa.

Embodiment 180. The printed circuit board of any one of embodiments 121and 148, wherein the dielectric substrate comprises a modulus of atleast about 1.3 GPa.

Embodiment 181. The printed circuit board of any one of embodiments 121and 148, wherein the dielectric substrate comprises a moistureabsorption of not greater than about 1.2%.

Embodiment 182. The printed circuit board of any one of embodiments 121and 148, wherein The printed circuit board comprises a porosity of notgreater than about 10 vol. %.

Embodiment 183. A method of forming a dielectric substrate, wherein themethod comprises: providing a polyimide layer; combining a first resinmatrix precursor component and a first ceramic filler precursorcomponent to form a forming mixture; and forming the forming mixtureinto a first filled polymer layer overlying the polyimide layer, whereinthe first ceramic filler precursor component comprises a first fillerprecursor material, and wherein the first filler precursor materialfurther comprises a mean particle size of not greater than about 10microns.

Embodiment 184. The method of embodiment 183, wherein a particle sizedistribution of the first filler precursor material of the first ceramicfiller precursor component comprises: a D₁₀ of at least about 0.2microns and not greater than about 1.6, a D₅₀ of at least about 0.5microns and not greater than about 2.7 microns, and a D₉₀ of at leastabout 0.8 microns and not greater than about 4.7 microns.

Embodiment 185. The method of embodiment 183, wherein the first fillerprecursor material of the first ceramic filler precursor componentcomprises a particle size distribution span (PSDS) of not greater thanabout 8, where PSDS is equal to (D₉₀−D₁₀)/D₅₀, where D₉₀ is equal to aD₉₀ particle size distribution measurement of the first filler precursormaterial, D₁₀ is equal to a D₁₀ particle size distribution measurementof the first filler precursor material, and D₅₀ is equal to a D₅₀particle size distribution measurement of the first filler precursormaterial.

Embodiment 186. The method of embodiment 183, wherein the first fillerprecursor material further comprises an average surface area of notgreater than about 10 m²/g.

Embodiment 187. The method of embodiment 183, wherein the first fillerprecursor material comprises a silica-based compound.

Embodiment 188. The method of embodiment 183, wherein the first fillerprecursor material comprises silica.

Embodiment 189. The method of embodiment 183, wherein the first resinmatrix precursor component comprises a perfluoropolymer.

Embodiment 190. The method of embodiment 189, wherein theperfluoropolymer comprises a copolymer of tetrafluoroethylene (TFE); acopolymer of hexafluoropropylene (HFP); a terpolymer oftetrafluoroethylene (TFE); or any combination thereof.

Embodiment 191. The method of embodiment 189, wherein theperfluoropolymer comprises polytetrafluoroethylene (PTFE),perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene(FEP), or any combination thereof.

Embodiment 192. The method of embodiment 189, wherein theperfluoropolymer consists of polytetrafluoroethylene (PTFE),perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene(FEP), or any combination thereof.

Embodiment 193. The method of embodiment 183, wherein the content of thefirst resin matrix precursor component is at least about 45 vol. % for atotal volume of the first filled polymer layer.

Embodiment 194. The method of embodiment 183, wherein the content of thefirst resin matrix precursor component is not greater than about 63 vol.% for a total volume of the first filled polymer layer.

Embodiment 195. The method of embodiment 189, wherein the content of theperfluoropolymer is at least about 45 vol. % for a total volume of thefirst filled polymer layer.

Embodiment 196. The method of embodiment 189, wherein the content of theperfluoropolymer is not greater than about 63 vol. % for a total volumeof the first filled polymer layer.

Embodiment 197. The method of embodiment 183, wherein the content of thefirst ceramic filler precursor component is at least about 30 vol. % fora total volume of the first filled polymer layer.

Embodiment 198. The method of embodiment 183, wherein the content of thefirst ceramic filler precursor component is not greater than about 57vol. % for a total volume of the first filled polymer layer.

Embodiment 199. The method of embodiment 183, wherein the content of thefirst filler precursor material is at least about 80 vol. % for a totalvolume of the first ceramic filler precursor component.

Embodiment 200. The method of embodiment 183, wherein the content of thefirst filler precursor material is not greater than about 100 vol. % fora total volume of the first ceramic filler precursor component.

Embodiment 201. The method of embodiment 183, wherein the first ceramicfiller precursor component further comprises a second filler precursormaterial.

Embodiment 202. The method of embodiment 201, wherein the second fillerprecursor material of the first ceramic filler precursor componentcomprises a high dielectric constant ceramic material.

Embodiment 203. The method of embodiment 202, wherein the highdielectric constant ceramic material has a dielectric constant of atleast about 14.

Embodiment 204. The method of embodiment 202, wherein the first ceramicfiller component further comprises TiO₂, SrTiO₃, ZrTi₂O₆, MgTiO₃,CaTiO₃, BaTiO₄ or any combination thereof.

Embodiment 205. The method of embodiment 201, wherein the content of thesecond filler precursor material of the first ceramic filler precursorcomponent is at least about 1 vol. % for a total volume of the firstceramic filler precursor component.

Embodiment 206. The method of embodiment 201, wherein the content of thesecond filler precursor material of the first ceramic filler precursorcomponent is not greater than about 20 vol. % for a total volume of thefirst ceramic filler precursor component.

Embodiment 207. The method of embodiment 204, wherein the content of theTiO₂ filler material in the first ceramic filler precursor component isat least about 1 vol. % for a total volume of the first ceramic fillerprecursor component.

Embodiment 208. The method of embodiment 204, wherein the content of theTiO₂ filler material in the first ceramic filler precursor component isnot greater than about 20 vol. % for a total volume of the first ceramicfiller precursor component.

Embodiment 209. The method of embodiment 183, wherein the first ceramicfiller precursor component is at least about 97% amorphous.

Embodiment 210. The method of embodiment 183, wherein the dielectricsubstrate further comprises a second filled polymer layer underlying thepolyimide layer, wherein the second filled polymer layer comprises asecond resin matrix precursor component; and a second ceramic fillerprecursor component, wherein the second ceramic filler precursorcomponent comprises a third filler precursor material, and wherein thethird filler precursor material further comprises a mean particle sizeof at not greater than about 10 microns.

Embodiment 211. The method of embodiment 210, wherein a particle sizedistribution of the third filler precursor material of the secondceramic filler component comprises: a D₁₀ of at least about 0.2 micronsand not greater than about 1.6, a D₅₀ of at least about 0.5 microns andnot greater than about 2.7 microns, and a D₉₀ of at least about 0.8microns and not greater than about 4.7 microns.

Embodiment 212. The method of embodiment 210, wherein the third fillerprecursor material of the second ceramic filler component comprises aparticle size distribution span (PSDS) of not greater than about 8,where PSDS is equal to (D₉₀−D₁₀)/D₅₀, where D₉₀ is equal to a D₉₀particle size distribution measurement of the third filler precursormaterial, D₁₀ is equal to a D₁₀ particle size distribution measurementof the third filler precursor material, and D₅₀ is equal to a D₅₀particle size distribution measurement of the third filler precursormaterial.

Embodiment 213. The method of embodiment 210, wherein the third fillerprecursor material further comprises an average surface area of notgreater than about 10 m²/g.

Embodiment 214. The method of embodiment 210, wherein the third fillerprecursor material comprises a silica-based compound.

Embodiment 215. The method of embodiment 210, wherein the third fillerprecursor material comprises silica.

Embodiment 216. The method of embodiment 210, wherein the third fillerprecursor material comprises a perfluoropolymer.

Embodiment 217. The method of embodiment 216, wherein theperfluoropolymer comprises a copolymer of tetrafluoroethylene (TFE); acopolymer of hexafluoropropylene (HFP); a terpolymer oftetrafluoroethylene (TFE); or any combination thereof.

Embodiment 218. The method of embodiment 216, wherein theperfluoropolymer comprises polytetrafluoroethylene (PTFE),perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene(FEP), or any combination thereof.

Embodiment 219. The method of embodiment 216, wherein theperfluoropolymer consists of polytetrafluoroethylene (PTFE),perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene(FEP), or any combination thereof.

Embodiment 220. The method of embodiment 210, wherein the content of thesecond resin matrix precursor component is at least about 45 vol. % fora total volume of the second filled polymer layer.

Embodiment 221. The method of embodiment 210, wherein the content of thesecond resin matrix precursor component is not greater than about 63vol. % for a total volume of the second filled polymer layer.

Embodiment 222. The method of embodiment 210, wherein the content of theperfluoropolymer is at least about 45 vol. % for a total volume of thesecond filled polymer layer.

Embodiment 223. The method of embodiment 210, wherein the content of theperfluoropolymer is not greater than about 63 vol. % for a total volumeof the second filled polymer layer.

Embodiment 224. The method of embodiment 210, wherein the content of thesecond ceramic filler precursor component is at least about 30 vol. %for a total volume of the second filled polymer layer.

Embodiment 225. The method of embodiment 210, wherein the content of thesecond ceramic filler precursor component is not greater than about 57vol. % for a total volume of the second filled polymer layer.

Embodiment 226. The method of embodiment 210, wherein the content of thethird filler precursor material is at least about 80 vol. % for a totalvolume of the second ceramic filler component.

Embodiment 227. The method of embodiment 210, wherein the content of thethird filler precursor material is not greater than about 100 vol. % fora total volume of the second ceramic filler component.

Embodiment 228. The method of embodiment 210, wherein the second ceramicfiller precursor component further comprises a TiO₂ filler material.

Embodiment 229. The method of embodiment 228, wherein the content of theTiO₂ filler material is at least about 1 vol. % for a total volume ofthe second ceramic filler precursor component.

Embodiment 230. The method of embodiment 228, wherein the content of theTiO₂ filler material is not greater than about 20 vol. % for a totalvolume of the second ceramic filler precursor component.

Embodiment 231. The method of embodiment 228, wherein the second ceramicfiller precursor component is at least about 97% amorphous.

Embodiment 232. The method of any one of embodiments 183 and 210,wherein the dielectric substrate comprises a porosity of not greaterthan about 10 vol. %.

Embodiment 233. The method of any one of embodiments 183 and 210,wherein the dielectric substrate comprises an average thickness of atleast about 10 microns.

Embodiment 234. The method of any one of embodiments 183 and 210,wherein the dielectric substrate comprises an average thickness of notgreater than about 200 microns.

Embodiment 235. The method of any one of embodiments 183 and 210,wherein the dielectric substrate comprises a dissipation factor (5 GHz,20% RH) of not greater than about 0.005.

Embodiment 236. The method of any one of embodiments 183 and 210,wherein the dielectric substrate comprises a dissipation factor (5 GHz,20% RH) of not greater than about 0.0014.

Embodiment 237. The method of any one of embodiments 183 and 210,wherein the dielectric substrate comprises a coefficient of thermalexpansion (x/y axe) of not greater than about 80 ppm/° C.

Embodiment 238. The method of any one of embodiments 183 and 210,wherein the dielectric substrate comprises a peel strength between thefirst filled polymer layer and the polyimide layer of at least about 5lb/in.

Embodiment 239. The method of any one of embodiments 183 and 210,wherein the dielectric substrate comprises a peel strength between thesecond filled polymer layer and the polyimide layer of at least about 5lb/in.

Embodiment 240. The method of any one of embodiments 183 and 210,wherein the dielectric substrate comprises a moisture absorption of notgreater than about 1.2%.

Embodiment 241. A method of forming a copper-clad laminate, wherein themethod comprises providing a copper foil layer, and forming a dielectricsubstrate overlying the copper foil layer, wherein forming thedielectric substrate comprises: providing a polyimide layer; combining afirst resin matrix precursor component and a first ceramic fillerprecursor component to form a forming mixture; and forming the formingmixture into a first filled polymer layer overlying the polyimide layer,wherein the first ceramic filler precursor component comprises a firstfiller precursor material, and wherein the first filler precursormaterial further comprises a mean particle size of not greater thanabout 10 microns.

Embodiment 242. The method of embodiment 241, wherein a particle sizedistribution of the first filler precursor material of the first ceramicfiller precursor component comprises: a D₁₀ of at least about 0.2microns and not greater than about 1.6, a D₅₀ of at least about 0.5microns and not greater than about 2.7 microns, and a D₉₀ of at leastabout 0.8 microns and not greater than about 4.7 microns.

Embodiment 243. The method of embodiment 241, wherein the first fillerprecursor material of the first ceramic filler precursor componentcomprises a particle size distribution span (PSDS) of not greater thanabout 8, where PSDS is equal to (D₉₀−D₁₀)/D₅₀, where D₉₀ is equal to aD₉₀ particle size distribution measurement of the first filler precursormaterial, D₁₀ is equal to a D₁₀ particle size distribution measurementof the first filler precursor material, and D₅₀ is equal to a D₅₀particle size distribution measurement of the first filler precursormaterial.

Embodiment 244. The method of embodiment 241, wherein the first fillerprecursor material further comprises an average surface area of notgreater than about 10 m²/g.

Embodiment 245. The method of embodiment 241, wherein the first fillerprecursor material comprises a silica-based compound.

Embodiment 246. The method of embodiment 241, wherein the first fillerprecursor material comprises silica.

Embodiment 247. The method of embodiment 241, wherein the first resinmatrix precursor component comprises a perfluoropolymer.

Embodiment 248. The method of embodiment 247, wherein theperfluoropolymer comprises a copolymer of tetrafluoroethylene (TFE); acopolymer of hexafluoropropylene (HFP); a terpolymer oftetrafluoroethylene (TFE); or any combination thereof.

Embodiment 249. The method of embodiment 247, wherein theperfluoropolymer comprises polytetrafluoroethylene (PTFE),perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene(FEP), or any combination thereof.

Embodiment 250. The method of embodiment 247, wherein theperfluoropolymer consists of polytetrafluoroethylene (PTFE),perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene(FEP), or any combination thereof.

Embodiment 251. The method of embodiment 241, wherein the content of thefirst resin matrix precursor component is at least about 45 vol. % for atotal volume of the first filled polymer layer.

Embodiment 252. The method of embodiment 241, wherein the content of thefirst resin matrix precursor component is not greater than about 63 vol.% for a total volume of the first filled polymer layer.

Embodiment 253. The method of embodiment 247, wherein the content of theperfluoropolymer is at least about 45 vol. % for a total volume of thefirst filled polymer layer.

Embodiment 254. The method of embodiment 247, wherein the content of theperfluoropolymer is not greater than about 63 vol. % for a total volumeof the first filled polymer layer.

Embodiment 255. The method of embodiment 241, wherein the content of thefirst ceramic filler precursor component is at least about 30 vol. % fora total volume of the first filled polymer layer.

Embodiment 256. The method of embodiment 241, wherein the content of thefirst ceramic filler precursor component is not greater than about 57vol. % for a total volume of the first filled polymer layer.

Embodiment 257. The method of embodiment 241, wherein the content of thefirst filler precursor material is at least about 80 vol. % for a totalvolume of the first ceramic filler precursor component.

Embodiment 258. The method of embodiment 241, wherein the content of thefirst filler precursor material is not greater than about 100 vol. % fora total volume of the first ceramic filler precursor component.

Embodiment 259. The method of embodiment 241, wherein the first ceramicfiller precursor component further comprises a second filler precursormaterial.

Embodiment 260. The method of embodiment 259, wherein the second fillerprecursor material of the first ceramic filler precursor componentcomprises a high dielectric constant ceramic material.

Embodiment 261. The method of embodiment 260, wherein the highdielectric constant ceramic material has a dielectric constant of atleast about 14.

Embodiment 262. The method of embodiment 260, wherein the first ceramicfiller component further comprises TiO₂, SrTiO₃, ZrTi₂O₆, MgTiO₃,CaTiO₃, BaTiO₄ or any combination thereof.

Embodiment 263. The method of embodiment 259, wherein the content of thesecond filler precursor material of the first ceramic filler precursorcomponent is at least about 1 vol. % for a total volume of the firstceramic filler precursor component.

Embodiment 264. The method of embodiment 259, wherein the content of thesecond filler precursor material of the first ceramic filler precursorcomponent is not greater than about 20 vol. % for a total volume of thefirst ceramic filler precursor component.

Embodiment 265. The method of embodiment 262, wherein the content of theTiO₂ filler material in the first ceramic filler precursor component isat least about 1 vol. % for a total volume of the first ceramic fillerprecursor component.

Embodiment 266. The method of embodiment 262, wherein the content of theTiO₂ filler material in the first ceramic filler precursor component isnot greater than about 20 vol. % for a total volume of the first ceramicfiller precursor component.

Embodiment 267. The method of embodiment 241, wherein the first ceramicfiller precursor component is at least about 97% amorphous.

Embodiment 268. The method of embodiment 241, wherein the dielectricsubstrate further comprises a second filled polymer layer underlying thepolyimide layer, wherein the second filled polymer layer comprises asecond resin matrix precursor component; and a second ceramic fillerprecursor component, wherein the second ceramic filler precursorcomponent comprises a third filler precursor material, and wherein thethird filler precursor material further comprises a mean particle sizeof at not greater than about 10 microns.

Embodiment 269. The method of embodiment 259, wherein a particle sizedistribution of the third filler precursor material of the secondceramic filler component comprises: a D₁₀ of at least about 0.2 micronsand not greater than about 1.6, a D₅₀ of at least about 0.5 microns andnot greater than about 2.7 microns, and a D₉₀ of at least about 0.8microns and not greater than about 4.7 microns.

Embodiment 270. The method of embodiment 259, wherein the third fillerprecursor material of the second ceramic filler component comprises aparticle size distribution span (PSDS) of not greater than about 8,where PSDS is equal to (D₉₀−D₁₀)/D₅₀, where D₉₀ is equal to a D₉₀particle size distribution measurement of the third filler precursormaterial, D₁₀ is equal to a D₁₀ particle size distribution measurementof the third filler precursor material, and D₅₀ is equal to a D₅₀particle size distribution measurement of the third filler precursormaterial.

Embodiment 271. The method of embodiment 259, wherein the third fillerprecursor material further comprises an average surface area of notgreater than about 10 m²/g.

Embodiment 272. The method of embodiment 259, wherein the third fillerprecursor material comprises a silica-based compound.

Embodiment 273. The method of embodiment 259, wherein the third fillerprecursor material comprises silica.

Embodiment 274. The method of embodiment 259, wherein the third fillerprecursor material comprises a perfluoropolymer.

Embodiment 275. The method of embodiment 274, wherein theperfluoropolymer comprises a copolymer of tetrafluoroethylene (TFE); acopolymer of hexafluoropropylene (HFP); a terpolymer oftetrafluoroethylene (TFE); or any combination thereof.

Embodiment 276. The method of embodiment 274, wherein theperfluoropolymer comprises polytetrafluoroethylene (PTFE),perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene(FEP), or any combination thereof.

Embodiment 277. The method of embodiment 274, wherein theperfluoropolymer consists of polytetrafluoroethylene (PTFE),perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene(FEP), or any combination thereof.

Embodiment 278. The method of embodiment 259, wherein the content of thesecond resin matrix precursor component is at least about 45 vol. % fora total volume of the second filled polymer layer.

Embodiment 279. The method of embodiment 259, wherein the content of thesecond resin matrix precursor component is not greater than about 63vol. % for a total volume of the second filled polymer layer.

Embodiment 280. The method of embodiment 259, wherein the content of theperfluoropolymer is at least about 45 vol. % for a total volume of thesecond filled polymer layer.

Embodiment 281. The method of embodiment 259, wherein the content of theperfluoropolymer is not greater than about 63 vol. % for a total volumeof the second filled polymer layer.

Embodiment 282. The method of embodiment 259, wherein the content of thesecond ceramic filler precursor component is at least about 30 vol. %for a total volume of the second filled polymer layer.

Embodiment 283. The method of embodiment 259, wherein the content of thesecond ceramic filler precursor component is not greater than about 57vol. % for a total volume of the second filled polymer layer.

Embodiment 284. The method of embodiment 259, wherein the content of thethird filler precursor material is at least about 80 vol. % for a totalvolume of the second ceramic filler component.

Embodiment 285. The method of embodiment 259, wherein the content of thethird filler precursor material is not greater than about 100 vol. % fora total volume of the second ceramic filler component.

Embodiment 286. The method of embodiment 259, wherein the second ceramicfiller precursor component further comprises a TiO₂ filler material.

Embodiment 287. The method of embodiment 286, wherein the content of theTiO₂ filler material is at least about 1 vol. % for a total volume ofthe second ceramic filler precursor component.

Embodiment 288. The method of embodiment 286, wherein the content of theTiO₂ filler material is not greater than about 20 vol. % for a totalvolume of the second ceramic filler precursor component.

Embodiment 289. The method of embodiment 286, wherein the second ceramicfiller precursor component is at least about 97% amorphous.

Embodiment 290. The method of any one of embodiments 241 and 259,wherein the dielectric substrate comprises a porosity of not greaterthan about 10 vol. %.

Embodiment 291. The method of any one of embodiments 241 and 259,wherein the dielectric substrate comprises an average thickness of atleast about 10 microns.

Embodiment 292. The method of any one of embodiments 241 and 259,wherein the dielectric substrate comprises an average thickness of notgreater than about 200 microns.

Embodiment 293. The method of any one of embodiments 241 and 259,wherein the dielectric substrate comprises a dissipation factor (5 GHz,20% RH) of not greater than about 0.005.

Embodiment 294. The method of any one of embodiments 241 and 259,wherein the dielectric substrate comprises a dissipation factor (5 GHz,20% RH) of not greater than about 0.0014.

Embodiment 295. The method of any one of embodiments 241 and 259,wherein the dielectric substrate comprises a coefficient of thermalexpansion (x/y axe) of not greater than about 80 ppm/° C.

Embodiment 296. The method of any one of embodiments 241 and 259,wherein the dielectric substrate comprises a peel strength between thefirst filled polymer layer and the polyimide layer of at least about 5lb/in.

Embodiment 297. The method of any one of embodiments 241 and 259,wherein the dielectric substrate comprises a peel strength between thesecond filled polymer layer and the polyimide layer of at least about 5lb/in.

Embodiment 298. The method of any one of embodiments 241 and 259,wherein the dielectric substrate comprises a moisture absorption of notgreater than about 1.2%.

Embodiment 299. A method of forming a printed circuit board, wherein themethod comprises providing a copper foil layer, and forming a dielectricsubstrate overlying the copper foil layer, wherein forming thedielectric substrate comprises: providing a polyimide layer; combining afirst resin matrix precursor component and a first ceramic fillerprecursor component to form a forming mixture; and forming the formingmixture into a first filled polymer layer overlying the polyimide layer,wherein the first ceramic filler precursor component comprises a firstfiller precursor material, and wherein the first filler precursormaterial further comprises a mean particle size of not greater thanabout 10 microns.

Embodiment 300. The method of embodiment 299, wherein a particle sizedistribution of the first filler precursor material of the first ceramicfiller precursor component comprises: a D₁₀ of at least about 0.2microns and not greater than about 1.6, a D₅₀ of at least about 0.5microns and not greater than about 2.7 microns, and a D₉₀ of at leastabout 0.8 microns and not greater than about 4.7 microns.

Embodiment 301. The method of embodiment 299, wherein the first fillerprecursor material of the first ceramic filler precursor componentcomprises a particle size distribution span (PSDS) of not greater thanabout 8, where PSDS is equal to (D₉₀−D₁₀)/D₅₀, where D₉₀ is equal to aD₉₀ particle size distribution measurement of the first filler precursormaterial, D₁₀ is equal to a D₁₀ particle size distribution measurementof the first filler precursor material, and D₅₀ is equal to a D₅₀particle size distribution measurement of the first filler precursormaterial.

Embodiment 302. The method of embodiment 299, wherein the first fillerprecursor material further comprises an average surface area of notgreater than about 10 m²/g.

Embodiment 303. The method of embodiment 299, wherein the first fillerprecursor material comprises a silica-based compound.

Embodiment 304. The method of embodiment 299, wherein the first fillerprecursor material comprises silica.

Embodiment 305. The method of embodiment 299, wherein the first resinmatrix precursor component comprises a perfluoropolymer.

Embodiment 306. The method of embodiment 305, wherein theperfluoropolymer comprises a copolymer of tetrafluoroethylene (TFE); acopolymer of hexafluoropropylene (HFP); a terpolymer oftetrafluoroethylene (TFE); or any combination thereof.

Embodiment 307. The method of embodiment 305, wherein theperfluoropolymer comprises polytetrafluoroethylene (PTFE),perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene(FEP), or any combination thereof.

Embodiment 308. The method of embodiment 305, wherein theperfluoropolymer consists of polytetrafluoroethylene (PTFE),perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene(FEP), or any combination thereof.

Embodiment 309. The method of embodiment 299, wherein the content of thefirst resin matrix precursor component is at least about 45 vol. % for atotal volume of the first filled polymer layer.

Embodiment 310. The method of embodiment 299, wherein the content of thefirst resin matrix precursor component is not greater than about 63 vol.% for a total volume of the first filled polymer layer.

Embodiment 311. The method of embodiment 305, wherein the content of theperfluoropolymer is at least about 45 vol. % for a total volume of thefirst filled polymer layer.

Embodiment 312. The method of embodiment 305, wherein the content of theperfluoropolymer is not greater than about 63 vol. % for a total volumeof the first filled polymer layer.

Embodiment 313. The method of embodiment 299, wherein the content of thefirst ceramic filler precursor component is at least about 30 vol. % fora total volume of the first filled polymer layer.

Embodiment 314. The method of embodiment 299, wherein the content of thefirst ceramic filler precursor component is not greater than about 57vol. % for a total volume of the first filled polymer layer.

Embodiment 315. The method of embodiment 299, wherein the content of thefirst filler precursor material is at least about 80 vol. % for a totalvolume of the first ceramic filler precursor component.

Embodiment 316. The method of embodiment 299, wherein the content of thefirst filler precursor material is not greater than about 100 vol. % fora total volume of the first ceramic filler precursor component.

Embodiment 317. The method of embodiment 299, wherein the first ceramicfiller precursor component further comprises a second filler precursormaterial.

Embodiment 318. The method of embodiment 317, wherein the second fillerprecursor material of the first ceramic filler precursor componentcomprises a high dielectric constant ceramic material.

Embodiment 319. The method of embodiment 318, wherein the highdielectric constant ceramic material has a dielectric constant of atleast about 14.

Embodiment 320. The method of embodiment 318, wherein the first ceramicfiller component further comprises TiO₂, SrTiO₃, ZrTi₂O₆, MgTiO₃,CaTiO₃, BaTiO₄ or any combination thereof.

Embodiment 321. The method of embodiment 317, wherein the content of thesecond filler precursor material of the first ceramic filler precursorcomponent is at least about 1 vol. % for a total volume of the firstceramic filler precursor component.

Embodiment 322. The method of embodiment 317, wherein the content of thesecond filler precursor material of the first ceramic filler precursorcomponent is not greater than about 20 vol. % for a total volume of thefirst ceramic filler precursor component.

Embodiment 323. The method of embodiment 318, wherein the content of theTiO₂ filler material in the first ceramic filler precursor component isat least about 1 vol. % for a total volume of the first ceramic fillerprecursor component.

Embodiment 324. The method of embodiment 318, wherein the content of theTiO₂ filler material in the first ceramic filler precursor component isnot greater than about 20 vol. % for a total volume of the first ceramicfiller precursor component.

Embodiment 325. The method of embodiment 299, wherein the first ceramicfiller precursor component is at least about 97% amorphous.

Embodiment 326. The method of embodiment 299, wherein the dielectricsubstrate further comprises a second filled polymer layer underlying thepolyimide layer, wherein the second filled polymer layer comprises asecond resin matrix precursor component; and a second ceramic fillerprecursor component, wherein the second ceramic filler precursorcomponent comprises a third filler precursor material, and wherein thethird filler precursor material further comprises a mean particle sizeof at not greater than about 10 microns.

Embodiment 327. The method of embodiment 317, wherein a particle sizedistribution of the third filler precursor material of the secondceramic filler component comprises: a D₁₀ of at least about 0.2 micronsand not greater than about 1.6, a D₅₀ of at least about 0.5 microns andnot greater than about 2.7 microns, and a D₉₀ of at least about 0.8microns and not greater than about 4.7 microns.

Embodiment 328. The method of embodiment 317, wherein the third fillerprecursor material of the second ceramic filler component comprises aparticle size distribution span (PSDS) of not greater than about 8,where PSDS is equal to (D₉₀−D₁₀)/D₅₀, where D₉₀ is equal to a D₉₀particle size distribution measurement of the third filler precursormaterial, D₁₀ is equal to a D₁₀ particle size distribution measurementof the third filler precursor material, and D₅₀ is equal to a D₅₀particle size distribution measurement of the third filler precursormaterial.

Embodiment 329. The method of embodiment 317, wherein the third fillerprecursor material further comprises an average surface area of notgreater than about 10 m²/g.

Embodiment 330. The method of embodiment 317, wherein the third fillerprecursor material comprises a silica-based compound.

Embodiment 331. The method of embodiment 317, wherein the third fillerprecursor material comprises silica.

Embodiment 332. The method of embodiment 317, wherein the third fillerprecursor material comprises a perfluoropolymer.

Embodiment 333. The method of embodiment 332, wherein theperfluoropolymer comprises a copolymer of tetrafluoroethylene (TFE); acopolymer of hexafluoropropylene (HFP); a terpolymer oftetrafluoroethylene (TFE); or any combination thereof.

Embodiment 334. The method of embodiment 332, wherein theperfluoropolymer comprises polytetrafluoroethylene (PTFE),perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene(FEP), or any combination thereof.

Embodiment 335. The method of embodiment 332, wherein theperfluoropolymer consists of polytetrafluoroethylene (PTFE),perfluoroalkoxy polymer resin (PFA), fluorinated ethylene propylene(FEP), or any combination thereof.

Embodiment 336. The method of embodiment 317, wherein the content of thesecond resin matrix precursor component is at least about 50 vol. % fora total volume of the second filled polymer layer.

Embodiment 337. The method of embodiment 317, wherein the content of thesecond resin matrix precursor component is not greater than about 63vol. % for a total volume of the second filled polymer layer.

Embodiment 338. The method of embodiment 317, wherein the content of theperfluoropolymer is at least about 45 vol. % for a total volume of thesecond filled polymer layer.

Embodiment 339. The method of embodiment 317, wherein the content of theperfluoropolymer is not greater than about 63 vol. % for a total volumeof the second filled polymer layer.

Embodiment 340. The method of embodiment 317, wherein the content of thesecond ceramic filler precursor component is at least about 30 vol. %for a total volume of the second filled polymer layer.

Embodiment 341. The method of embodiment 317, wherein the content of thesecond ceramic filler precursor component is not greater than about 57vol. % for a total volume of the second filled polymer layer.

Embodiment 342. The method of embodiment 317, wherein the content of thethird filler precursor material is at least about 80 vol. % for a totalvolume of the second ceramic filler component.

Embodiment 343. The method of embodiment 317, wherein the content of thethird filler precursor material is not greater than about 100 vol. % fora total volume of the second ceramic filler component.

Embodiment 344. The method of embodiment 317, wherein the second ceramicfiller precursor component further comprises a TiO₂ filler material.

Embodiment 345. The method of embodiment 344, wherein the content of theTiO₂ filler material is at least about 1 vol. % for a total volume ofthe second ceramic filler precursor component.

Embodiment 346. The method of embodiment 344, wherein the content of theTiO₂ filler material is not greater than about 20 vol. % for a totalvolume of the second ceramic filler precursor component.

Embodiment 347. The method of embodiment 344, wherein the second ceramicfiller precursor component is at least about 97% amorphous or at leastabout 98% or at least about 99%.

Embodiment 348. The method of any one of embodiments 299 and 317,wherein the dielectric substrate comprises a porosity of not greaterthan about 10 vol. %.

Embodiment 349. The method of any one of embodiments 299 and 317,wherein the dielectric substrate comprises an average thickness of atleast about 10 microns.

Embodiment 350. The method of any one of embodiments 299 and 317,wherein the dielectric substrate comprises an average thickness of notgreater than about 200 microns.

Embodiment 351. The method of any one of embodiments 299 and 317,wherein the dielectric substrate comprises a dissipation factor (5 GHz,20% RH) of not greater than about 0.005.

Embodiment 352. The method of any one of embodiments 299 and 317,wherein the dielectric substrate comprises a dissipation factor (5 GHz,20% RH) of not greater than about 0.0014.

Embodiment 353. The method of any one of embodiments 299 and 317,wherein the dielectric substrate comprises a coefficient of thermalexpansion (x/y axe) of not greater than about 80 ppm/° C.

Embodiment 354. The method of any one of embodiments 299 and 317,wherein the dielectric substrate comprises a peel strength between thefirst filled polymer layer and the polyimide layer of at least about 5lb/in.

Embodiment 355. The method of any one of embodiments 299 and 317,wherein the dielectric substrate comprises a peel strength between thesecond filled polymer layer and the polyimide layer of at least about 5lb/in.

Embodiment 356. The method of any one of embodiments 299 and 317,wherein the dielectric substrate comprises a moisture absorption of notgreater than about 1.2%.

EXAMPLES

The concepts described herein will be further described in the followingExamples, which do not limit the scope of the invention described in theclaims.

Example 1

Sample dielectric substrates S1-S8 were configured and formed accordingto certain embodiments described herein. Each sample dielectricsubstrate includes a polyimide layer, a first filled polymer layeroverlying a first surface of the polyimide layer, and a second filledpolymer layer underlying a second surface of the polyimide layer. Theresin matrix component for each filled polymer layer of the sampledielectric substrates S1-S8 is a fluoropolymer or combination offluoropolymers. The ceramic-filled component for each filled polymerlayer of the sample dielectric substrates S1-S7 is silica-basedcomponent type A and the ceramic-filled component for each filledpolymer layer of the sample dielectric substrate S8 is silica-basedcomponent type B. The composition of each filled polymer layer is 45.6vol. % resin matrix component and 54.4 vol. % ceramic filler component.

Characteristics, including particle size distribution measurements(i.e., D₁₀, D₅₀ & D₉₀), particle size distribution span, mean particlesize, and BET surface area, of the silica-based component types used inthe sample dielectric substrates S1-S8 are summarized in Table 1 below.

TABLE 1 Silica-Based Component Characteristics Silica- PSDS Mean BETBased (D₉₀- Particle Surface Component D₁₀ D₅₀ D₉₀ D₁₀)/ Size Area Type(μm) (μm) (μm) D₅₀ (μm) (m²/g) A 1.3 2.3 3.9 1.13 2.3-3.0 2.2-2.5 B 0.51.1 1.6 1.0 1.0-1.9 6.1

Performance properties of each sample dielectric substrates S1-S8 aresummarized in Table 2 below. The summarized performance propertiesinclude the permittivity of the sample dielectric substrate measured at5 GHz (“Dk (5 GHz)”), the loss tangent of the substrate measured at 5GHz, 20% RH (“Df (5 GHz, 20% RH)”), the loss tangent of the sampledielectric substrate measured at 5 GHz, 80% RH (“Df (5 GHz, 80% RH)”),and the coefficient of thermal expansion of the sample dielectricsubstrate (“CTE”).

TABLE 2 Performance Properties Sample Df (5 GHz, 20% Df (5 GHz, 80% No.Dk (5 GHz) RH) RH) CTE (ppm/° C.) S1 3.15 0.0010 0.00300 17 S2 3.0800010 0.00250 14 S3 3.28 0.0014 0.00330 12 S4 3.03 0.0014 0.00260 — S53.10 0.0010 0.00200 — S6 3.02 0.0016 0.00230 — S7 3.09 0.0016 000230 —S8 3.17 0.0018 0.00240 —

Note that not all of the activities described above in the generaldescription or the examples are required, that a portion of a specificactivity may not be required, and that one or more further activitiesmay be performed in addition to those described. Still further, theorder in which activities are listed is not necessarily the order inwhich they are performed.

Benefits, other advantages, and solutions to problems have beendescribed above with regard to specific embodiments. However, thebenefits, advantages, solutions to problems, and any feature(s) that maycause any benefit, advantage, or solution to occur or become morepronounced are not to be construed as a critical, required, or essentialfeature of any or all the claims.

The specification and illustrations of the embodiments described hereinare intended to provide a general understanding of the structure of thevarious embodiments. The specification and illustrations are notintended to serve as an exhaustive and comprehensive description of allof the elements and features of apparatus and systems that use thestructures or methods described herein. Separate embodiments may also beprovided in combination in a single embodiment, and conversely, variousfeatures that are, for brevity, described in the context of a singleembodiment, may also be provided separately or in any subcombination.Further, reference to values stated in ranges includes each and everyvalue within that range. Many other embodiments may be apparent toskilled artisans only after reading this specification. Otherembodiments may be used and derived from the disclosure, such that astructural substitution, logical substitution, or another change may bemade without departing from the scope of the disclosure. Accordingly,the disclosure is to be regarded as illustrative rather thanrestrictive.

What is claimed is:
 1. A dielectric substrate comprising: a polyimidelayer and a first filled polymer layer overlying the polyimide layer,wherein the first filled polymer layer comprises a first resin matrixcomponent; and a first ceramic filler component, wherein the firstceramic filler component comprises a first filler material, and whereinthe first filler material further comprises a mean particle size of atnot greater than about 10 microns.
 2. The dielectric substrate of claim1, wherein a particle size distribution of the silica filler material ofthe first ceramic filler component comprises: a D₁₀ of at least about0.2 microns and not greater than about 1.6, a D₅₀ of at least about 0.5microns and not greater than about 2.7 microns, and a D₉₀ of at leastabout 0.8 microns and not greater than about 4.7 microns.
 3. Thedielectric substrate of claim 1, wherein the silica filler material ofthe first ceramic filler component comprises a particle sizedistribution span (PSDS) of not greater than about 8, where PSDS isequal to (D₉₀−D₁₀)/D₅₀, where D₉₀ is equal to a D₉₀ particle sizedistribution measurement of the silica filler material, D₁₀ is equal toa D₁₀ particle size distribution measurement of the first fillermaterial, and D₅₀ is equal to a D₅₀ particle size distributionmeasurement of the first filler material.
 4. The dielectric substrate ofclaim 1, wherein the first filler material further comprises an averagesurface area of not greater than about 10 m²/g.
 5. The dielectricsubstrate of claim 1, wherein the first filler material comprises asilica-based compound.
 6. The dielectric substrate of claim 1, whereinthe first resin matrix component comprises a perfluoropolymer.
 7. Thedielectric substrate of claim 1, wherein the content of the first resinmatrix component is at least about 45 vol. % and not greater than about63 vol. % for a total volume of the first filled polymer layer.
 8. Thedielectric substrate of claim 1, wherein the content of the firstceramic filler component is at least about 30 vol. % and not greaterthan about 57 vol. % for a total volume of the first filled polymerlayer.
 9. The dielectric substrate of claim 1, wherein the content ofthe first filler material is at least about 80 vol. % and not greaterthan about 100 vol. % for a total volume of the first ceramic fillercomponent.
 10. The dielectric substrate of claim 1, wherein the firstceramic filler component further comprises a second filler material. 11.The dielectric substrate of claim 10, wherein the second filler materialof the first ceramic filler component comprises a high dielectricconstant ceramic material.
 12. The dielectric substrate of claim 1,wherein the dielectric substrate further comprises a second filledpolymer layer underlying the polyimide layer, wherein the second filledpolymer layer comprises a second resin matrix component; and a secondceramic filler component, wherein the second ceramic filler componentcomprises a silica filler material, and wherein the first fillermaterial further comprises a mean particle size of at not greater thanabout 10 microns.
 13. The dielectric substrate of claim 12, wherein aparticle size distribution of the silica filler material of the secondceramic filler component comprises: a D₁₀ of at least about 0.2 micronsand not greater than about 1.6, a D₅₀ of at least about 0.5 microns andnot greater than about 2.7 microns, and a D₉₀ of at least about 0.8microns and not greater than about 4.7 microns.
 14. The dielectricsubstrate of claim 12, wherein the first filler material furthercomprises an average surface area of not greater than about 10 m²/g. 15.The dielectric substrate of claim 12, wherein the second filler materialcomprises a silica-based compound.
 16. The dielectric substrate of claim1, wherein the dielectric substrate comprises a dissipation factor (5GHz, 20% RH) of not greater than about 0.005.
 17. A copper-clad laminatecomprising a copper foil layer, and a dielectric substrate overlying thecopper foil layer, wherein the dielectric substrate comprises: apolyimide layer and a first filled polymer layer overlying the polyimidelayer, wherein the first filled polymer layer comprises a first resinmatrix component; and a first ceramic filler component, wherein thefirst ceramic filler component comprises a first filler material, andwherein the first filler material further comprises a mean particle sizeof at not greater than about 10 microns.
 18. The copper-clad laminate ofclaim 17, wherein a particle size distribution of the silica fillermaterial of the first ceramic filler component comprises: a D₁₀ of atleast about 0.2 microns and not greater than about 1.6, a D₅₀ of atleast about 0.5 microns and not greater than about 2.7 microns, and aD₉₀ of at least about 0.8 microns and not greater than about 4.7microns.
 19. The copper-clad laminate of claim 17, wherein the silicafiller material of the first ceramic filler component comprises aparticle size distribution span (PSDS) of not greater than about 8,where PSDS is equal to (D₉₀−D₁₀)/D₅₀, where D₉₀ is equal to a D₉₀particle size distribution measurement of the silica filler material,D₁₀ is equal to a D₁₀ particle size distribution measurement of thefirst filler material, and D₅₀ is equal to a D₅₀ particle sizedistribution measurement of the first filler material.
 20. A printedcircuit board comprising a copper-clad laminate, wherein the copper-cladlaminate comprises: a copper foil layer, and a dielectric substrateoverlying the copper foil layer, wherein the dielectric substratecomprises: a polyimide layer and a first filled polymer layer overlyingthe polyimide layer, wherein the first filled polymer layer comprises afirst resin matrix component; and a first ceramic filler component,wherein the first ceramic filler component comprises a first fillermaterial, and wherein the first filler material further comprises a meanparticle size of at not greater than about 10 microns.